Unit 2&3 Questions

Post on 03-Dec-2015

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Transcript of Unit 2&3 Questions

Unit-2

1) Briefly discuss the generalized scaling technique.2) Show that the electric field profile become became a 2dimensional in short channel devices.3) Explain the short channel effect of MOS device4) Discuss the processing challenges of further CMOs miniaturization with respect to

interconnect.

5) Explain the scaling theory &explain one of the current methods used in scaling theory to obtain sub-micron device miniaturization.

6) Compare optical lithography &electron beam lithography

Unit-3

1) Explain the working principal of carbon nano tube FET device with a neat sketch.

2) Mention the key advantages of molecular material.3) Name the 3 different evolutionary approaches that are useful in extending the performance of standard CMOS devices and explain any one in them?4) With neat diagram differentiate between LUMO state & HOMO states.5) Describe the construction and working principles of SOI MOSFET.6) Bring out the difference between molecular computing & biological computing.7) Sketch the molecular diode energy levels under equilibrium, forward bias & reverse bias.8) Sketch the structure molecular diode& highlight the feature of σ−bond &π-bonds of molecular material.9) Explain the working principle of a molecular diode with molecular structure.10) Along with the structure, bring out the difference between bulks MOSFET & SOI MOSFET.