Post on 05-Jan-2016
Ultra-rad-hard Sensors for Particle Physics Applications
Z. LiBrookhaven National Laboratory
On behalf of CERN RD50 Collaboration
Pixel 2002, September 9-12, 2002, Carmel, CA
J.Adey1, A.Al-Ajili2, P.Alexandrov3, G.Alfieri4, P.P.Allport5, A.Andreazza6, M.Artuso7, S.Assouak8, B.S.Avset9, A.Baldi10, L.Barabash11, E.Baranova3, A.Barcz12, A.Basile13, R.Bates2, B.Bekenov14, N.Belova3, G.M.Bilei15, D.Bisello16, A.Blumenau1,
V.Boisvert17, G.Bolla18, V.Bondarenko19, E.Borchi10, L.Borrello20, D.Bortoletto18, M.Boscardin21, L.Bosisio22, G.Bredholt9, L.Breivik9, T.J.Brodbeck23, J.Broz24, A.Brukhanov3, M.Bruzzi10, A.Brzozowski12, M.Bucciolini10, P.Buhmann25, C.Buttar26, F.Campabadal27,
D.Campbell23, C.Canali13, A.Candelori16, G.Casse5, A.Chilingarov23, D.Chren24, V.Cindro28, M.Citterio6, R.Coluccia29, D.Contarato25, J.Coutinho1, D.Creanza30, L.Cunningham2, V.Cvetkov3, C.Da Via31, G.-F.Dalla Betta21, G.Davies32, I.Dawson26, W.de Boer33, M.De
Palma30, P.Dervan26, A.Dierlamm33, S.Dittongo22, L.Dobrzanski12, Z.Dolezal24, A.Dolgolenko11, J.Due-Hansen9, T.Eberlein1, V.Eremin34, C.Fall1, C.Fleta27, E.Forton8, S.Franchenko3, E.Fretwurst25, F.Gamaz35, C.Garcia36, J.E.Garcia-Navarro36, E.Gaubas37, M.-
H.Genest35, K.A.Gill17, K.Giolo18, M.Glaser17, C.Goessling38, V.Golovine14, J.Goss1, A.Gouldwell2, G.Grégoire8, P.Gregori21, E.Grigoriev14, C.Grigson26, A.Groza11, J.Guskov39, L.Haddad2, R.Harding32, J.Härkönen40, J.Hasi31, F.Hauler33, S.Hayama32,
F.Hönniger25, T.Horazdovsky24, R.Horisberger41, M.Horn2, A.Houdayer35, B.Hourahine1, A.Hruban12, G.Hughes23, I.Ilyashenko34, A.Ivanov34, K.Jarasiunas37, R.Jasinskaite37, T.Jin32, B.K.Jones23, R.Jones1, C.Joram17, L.Jungermann33, S.Kallijärvi42, P.Kaminski12,
A.Karpenko11, A.Karpenko31, A.Karpov14, V.Kazlauskiene37, V.Kazukauskas37, M.Key27, V.Khivrich11, J.Kierstead43, J.Klaiber-Lodewigs38, M.Kleverman44, R.Klingenberg38, P.Kodys24, Z.Kohout24, A.Kok31, A.Kontogeorgakos45, G.Kordas45, A.Kowalik12,
R.Kozlowski12, M.Kozodaev14, O.Krasel38, R.Krause-Rehberg19, M.Kuhnke31, A.Kuznetsov4, S.Kwan29, S.Lagomarsino10, T.Lari6, K.Lassila-Perini40, V.Lastovetsky11, S.Latushkin3, R.Lauhakangas46, I.Lazanu47, S.Lazanu47, C.Lebel35, C.Leroy35, Z.Li43, L.Lindstrom44,
G.Lindström25, V.Linhart24, A.P.Litovchenko11, P.Litovchenko11, A.Litovchenko16, V.Litvinov3, M.Lozano27, Z.Luczynski12, A.Mainwood32, I.Mandic28, S.Marti i Garcia36, C.Martínez27, S.Marunko39, K.Mathieson2, A.Mazzanti13, J.Melone2, D.Menichelli10,
C.Meroni6, A.Messineo20, S.Miglio10, M.Mikuz28, J.Miyamoto18, M.Moll17, E.Monakhov4, L.Murin44, F.Nava13, H.Nikkilä42, E.Nossarzewska-Orlowska12, S.Nummela40, J.Nysten40, R.Orava46, V.OShea2, K.Osterberg46, S.Parker48, C.Parkes2, D.Passeri15,
U.Pein25, G.Pellegrini2, L.Perera49, B.Piatkowski12, C.Piemonte21, G.U.Pignatel15, N.Pinho1, S.Pini10, I.Pintilie25, L.Plamu42, L.Polivtsev11, P.Polozov14, J.Popule50, S.Pospisil24, G.Pucker21, V.Radicci30, J.M.Rafí27, F.Ragusa6, M.Rahman2, R.Rando16, K.Remes42,
R.Roeder51, T.Rohe41, S.Ronchin21, C.Rott18, A.Roy18, P.Roy2, A.Ruzin39, A.Ryazanov3, S.Sakalauskas37, J.Sanna46, L.Schiavulli30, S.Schnetzer49, T.Schulman46, S.Sciortino10, G.Sellberg29, P.Sellin52, D.Sentenac20, I.Shipsey18, P.Sicho50, T.Sloan23, M.Solar24, S.Son18,
B.Sopko24, J.Stahl25, A.Starodumov20, D.Stolze51, R.Stone49, J.Storasta37, N.Strokan34, W.Strupinski12, M.Sudzius37, B.Surma12, A.Suvorov14, B.G.Svensson4, M.Tomasek50, C.Trapalis45, C.Troncon6, A.Tsvetkov24, E.Tuominen40, E.Tuovinen40, T.Tuuva42, M.Tylchin39, H.Uebersee51, J.Uher24, M.Ullán27, J.V.Vaitkus37, P.Vanni13, E.Verbitskaya34, G.Verzellesi13, V.Vrba50, S.Watts31,
A.Werner9, I.Wilhelm24, S.Worm49, V.Wright2, R.Wunstorf38, P.Zabierowski12, A.Zaluzhnyi14, M.Zavrtanik28, M.Zen21, V.Zhukov33, N.Zorzi21
RD50 – 271 members
1 University of Exeter, Department of Physics, Exeter, EX4 4QL, United Kingdom; 2 Dept. of Physics & Astronomy, Glasgow University, Glasgow, UK; 3 Russian Research Center "Kurchatov Institute", Moscow, Russia; 4 University of Oslo, Physics
Department/Physical Electronics, Oslo, Norway; 5 Department of Physics, University of Liverpool, United Kingdom; 6 INFN and University of Milano, Department of Physics, Milano, Italy; 7 Experimental Particle Physics Group, Syracuse University, Syracuse, USA; 8 Université catholique de Louvain, Institut de Physique Nucléaire, Louvain-la-Neuve, Belgium; 9 SINTEF Electronics and
Cybernetics Microsystems P.O.Box 124 Blindern N-0314 Oslo, Norway; 10 INFN Florence – Department of Energetics, University of Florence, Italy; 11 Institute for Nuclear Research of the Academy of Sciences of Ukraine, Radiation PhysicDepartments; 12 Institute of Electronic Materials Technology, Warszawa, Poland; 13 Dipartimento di Fisica-Università di Modena e Reggio Emilia, Italy; 14 State
Scientific Center of Russian Federation, Institute for Theoretical and Experimental Physics, Moscow, Russia; 15 I.N.F.N. and Università di Perugia – Italy; 6 Dipartimento di Fisica and INFN, Sezione di Padova, Italy; 17 CERN, Geneva, Switzerland; 18 Purdue University,
USA; 19 University of Halle; Dept. of Physics, Halle, Germany; 20 Universita` di Pisa and INFN sez. di Pisa, Italy; 21 ITC-IRST, Microsystems Division, Povo, Trento, Italy; 22 I.N.F.N.-Sezione di Trieste, Italy; 23 Department of Physics, Lancaster University, Lancaster, United Kingdom; 24 Czech Technical University in Prague&Charles University Prague, Czech Republic; 25 Institute for Experimental Physics, University of Hamburg, Germany; 26 Experimental Particle Physics Group, Dept of Physics, University of
Sheffield, Sheffield, U.K.; 27 Centro Nacional de Microelectrónica (IMB-CNM, CSIC); 28 Jozef Stefan Institute and Department of Physics, University of Ljubljana, Ljubljana, Slovenia; 29 Fermilab, USA; 30 Dipartimento Interateneo di Fisica & INFN - Bari, Italy; 31
Brunel University, Electronic and Computer Engineering Department, Uxbridge, United Kingdom; 32 Physics Department, Kings College London, United Kingdom; 33 University of Karlsruhe, Institut fuer Experimentelle Kernphysik, Karlsruhe, Germany; 34 Ioffe
Phisico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia; ; 35 Groupe de la Physique des Particules, Université de Montreal, Canada; 36 IFIC Valencia, Apartado 22085, 46071 Valencia, Spain; 37 Institute of Materials Science and
Applied Research, Vilnius University, Vilnius, Lithuania; 38 Universitaet Dortmund, Lehrstuhl Experimentelle Physik IV, Dortmund, Germany; 39 Tel Aviv University, Israel; 40 Helsinki Institute of Physics, Helsinki, Finland; 41 Paul Scherrer Institut, Laboratory for Particle Physics, Villigen, Switzerland; 42 University of Oulu, Microelectronics Instrumentation Laboratory, Finland; 43 Brookhaven
National Laboratory, Upton, NY, USA; 44 Department of Solid State Physics, University of Lund, Sweden; 45 NCSR DEMOKRITOS, Institute of Materials Science, Aghia Paraskevi Attikis, Greece; 46 High Energy Division of the Department of Physical Science,
University of Helsinki, Helsinki, Finland; 47 National Institute for Materials Physics, Bucharest - Magurele, Romania; 48 University of Hawaii; 49 Rutgers University, Piscataway, New Jersey, USA; 50 Institute of Physics, Academy of Sciences of the Czech Republic,
Praha, Czech Republic; 51 CiS Institut für Mikrosensorik gGmbH, Erfurt, Germany; 52 Department of Physics, University of Surrey, Guildford, United Kingdom
RD50 – 52 institutes
OUTLINE• Introduction• Radiation induced defects levels in Si• Radiation induced degradation of electrical
properties in Si detectorsLeakage current Changes in electrical neutral bulkSpace charge transformations and CCE loss
• RD 50’s approaches to obtain ultra radiation hardness
Material /impurity / defect engineering (MIDE)Device structure engineering (DSE)New materials
• Future tasks to be carried out by RD 50• Summary
Introduction
LHC L = 1034cm-2s-1 ( R=4cm) ~ 3·1015cm-2 10 years( R=75cm) ~ 3·1013cm-2
Technology available, however serious radiation damage will resultlt.
Possible up-grade L = 1035cm-2s-1 ( R=4cm) ~1.6·1016cm-2
Afocused and coordinated R&D effort is mandatory to develop reliable and
cost-effective radiation hard HEP detector technologies for such radiation
levels ---- The approval and formation of CERN RD50 Collaboration (6/02)
Dedicated radiation hardness studies also beneficial before a luminosity upgradeRadiation hard technologies now adopted have not been completely characterized:
Oxygen-enriched Si in ATLAS pixels
A deep understanding of radiation damage will be fruitful also for the linear collider where high doses of e, will play a significant role.
Scientific Organization of RD50
SpokespersonMara Bruzzi
INFN and University of Florence
Deputy-SpokespersonClaude Leroy
University of Montreal
Defect / MaterialCharacterizationBengt Svensson(Oslo University)
Defect Engineering
Eckhart Fretwurst(Hamburg University)
Macroscopic Effects
Stanislav Pospisil(Prague University)
New Structures
Mahfuzur Rahman(Glasgow University)
Full DetectorSystems
Gianluigi Casse(Liverpool University)
New Materials
Juozas V.Vaitkus(Vilnius University)
•Pre-irradiationSIMS, IR, PL,Hall, FPP,….
•TheoryDefect formation, defect annealing,energy states,…..
•Post-irradiationTSC, DLTS, EPR,PICTS,…
•Oxygenation•Dimerization•Other impurities
H, N, Ge, …
•Thermal donors•Pre-irradiation
procedures
• SiC• CdTe• other materials
•Test structurecharacterizationIV, CV, CCE
•NIEL•Device modeling•Operational
conditions
•3D detectors•Thin detectors•Cost effective
solutions
•LHC-like tests•Links to HEP•Links to R&Dof electronics
•Comparison:pad-mini-fulldetectors
Defect / MaterialCharacterizationBengt Svensson(Oslo University)
Defect Engineering
Eckhart Fretwurst(Hamburg University)
Macroscopic Effects
Stanislav Pospisil(Prague University)
New Structures
Mahfuzur Rahman(Glasgow University)
Full DetectorSystems
Gianluigi Casse(Liverpool University)
New Materials
Juozas V.Vaitkus(Vilnius University)
•Pre-irradiationSIMS, IR, PL,Hall, FPP,….
•TheoryDefect formation, defect annealing,energy states,…..
•Post-irradiationTSC, DLTS, EPR,PICTS,…
•Oxygenation•Dimerization•Other impurities
H, N, Ge, …
•Thermal donors•Pre-irradiation
procedures
• SiC• CdTe• other materials
•Test structurecharacterizationIV, CV, CCE
•NIEL•Device modeling•Operational
conditions
•3D detectors•Thin detectors•Cost effective
solutions
•LHC-like tests•Links to HEP•Links to R&Dof electronics
•Comparison:pad-mini-fulldetectors
CERN contact: Michael Moll
CERN RD50Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders
D is p la c e m e n t ra d ia tio n in d u c e d d e fe c ts in S i -6 0C o g a m m a ra y
S i sV
S i i
V -V , V -Oe tc ., s in g leD e fe c ts o n ly(n o c lu s te rs )
S i C o m p to n
E le c tro n
(1 M e V ) R e c o ils(1 5 0 e V )
F r e n k e l p a ir
D is p la c e m e n t ra d ia tio n in d u c e d d e fe c ts in S i -n e u tro n
n
(1 M e V )S i s
V
S iiR e c o ils
(1 3 3 k e V )C a s c a d e w ithm a n y in te ra c tio n s
V -V , V -Oe tc ., s in g led e fe c ts
D e fe c t c lu s te rsD is o rd e re d re g io n s
2 5 e V th r e sh o ld5 k e V th r e sh o ld
M a in ly
F r e n k e l p a ir
Displacement radiation induced defects in Si –charged particle
(p, , etc.)
It is between neutron and gamma:Lots of single defectsplus some smaller defect clusters
xxxxxx
xxxxxxCharged particles (p, , etc.)
xxxxxxxn
Defect clustersSingle defectsParticle type
xxxxxx
xxxxxxCharged particles (p, , etc.)
xxxxxxxn
Defect clustersSingle defectsParticle type
Comparison of defect structures
I n c r e a s e o f l e a k a g e c u r r e n t w i t h f l u e n c e
Z . L i , e t a l , N I M A 3 0 8 ( 1 9 9 1 ) 5 8 5
equnJ ,
×
: d a m a g e c o n s t a n t , 4 - 6 x 1 0 - 1 7 A / c m a t 2 0 C
0 . 0 0 3 0 0 . 0 0 3 5 0 . 0 0 4 0 0 . 0 0 4 5 0 . 0 0 5 0 0 . 0 0 5 51 0
- 5
1 0- 4
1 0- 3
1 0- 2
1 0- 1
1 00
1 01
2 8 5 K
e x p e r i m e n tf i t , t w o l e v e l m o d e l :
It o t
c o n t r i b u t i o n :
V V-
D L 1 1
I, A
1 / T , K - 1
L e a k a g e c u r r e n t t e m p . d e p e n d e n c ekTE aeJJ /
0 / E a = 0 . 6 5 e V f o r 1 M e V n e u t r o n r a d i a t i o n
E . V e r b i t s k a y a , e t a l , F l o r e n c e C o n f e r e n c e , J u l y , 2 0 0 0
2 0 0 k
- 1 0 C
3 0 0 k
( 0 . 5 1 e V )( 0 . 4 - 0 . 4 5 e V )
M o d e s t c o o l i n g c a n h e l p a l o t !
Radiation induced degradation of electricalproperties in Si detectors
Parameterization of Leakage current
J = eq
: leakage current constant
Annealing behavior:
(t)= I ·exp(-t/I )++ 0 - · ln(t/t0)
0 = -9x10-17 A/cm+4.6x10-14 /Ta AK/cm t0=1 min
1/ I= k0I exp(-EI/kBTa ) k0I =1.2 x10-18 /s, EI=1.1 eV
I =1.2x10-17 A/cm
=3.1x10-18 A/cm
M. Moll, Ph.D. Thesis, University of Hamburg, 1999
Bulk Damage (electrical neutral bulk, ENB)
Si bulk resistivity increases with fluence and saturates near the intrinsicvalue of about 300 k cm
B. Dezillie et al., IEEE Trans. Nucl. Vol. 46, No. 3, (1999) 221
100
1000
10000
100000
1000000
0.E+00 2.E+14 4.E+14 6.E+14 8.E+14
Neutron Fluence (n/cm2)
Res
istiv
ity (O
hm
cm
)
A, CZ100B, FZ100C, FZ500FZ4-6k
S. Pirollo et al., NIM A426 (1999) 126-130
Space charge transformations and CCE lossSpace charge transformation (SCT) takes one of the following three forms:
1. Space charge becomes more negative with radiationdue to the creation negative deep acceptors (As-irradiated effect)
• Space charge sign inversion (SCSI) or “type inversion”• Increase in full depletion voltage (Vfd) due to increase of net
space charge density Vfd = CCE loss at a given bias
2. Increase of space charge density during annealing at RT andelevated temperatures (“Reverse annealing”)• More increase of Vfd
3. Space charge modifications due to trapping by free carriers
0
2
2effNed
A s - i r r a d i a t e d E f f e c t sS C S I ( S p a c e c h a r g e s i g n i n v e r s i o n ) - - - d o n o r r e m o v a l & a c c e p t o r c r e a t i o n :
( D R ) ( A C )
S C S I( )
( + S C ) ( - S C )
ndeffneNN
×
0
D R
A C
R . W u n s t o r f , D E S Y F 3 5 D - 9 7 - 0 8 , 1 9 9 7
As-irradiated EffectsDonor removal modelsV+P P-V (E-center)
B. Dezillie, Z. Li, et al., IEEE Trans. Nucl. Sci., Vol. 46, No.3, (1999) 221-227
model ModifiedN
0.1
RemovalDonor 10
onCompensati 0
(3)
d0
13-
)(0
ndeff
neNN
1E+12
1E+13
1E+14
1E+15
1E+16
1E+12 1E+13 1E+14 1E+15 1E+16Nd,0 (cm
-3)
Inve
rsio
n F
luence (cm
-2)
Universal model
(Underlined Compensat ion)
= 0.1 / Nd0
Compensation
= 0
Classic Donor Removal
= 10-13
10|11 10|12 10|13 10|14
Initial Doping Concentration Nd0 (cm-3)
10|11
10|12
10|13
10|14
10|15
10|16
SC
SI
Flu
en
ce a
nd
Satu
rate
Flu
en
ce
SCSI FluenceSaturated FluenceModel
CZ
Modified model:= 0.1/Nd0
(AC only)
(classic model)
A c c e p t o r c r e a t i o n :V + V V - VA n d o t h e r V - V r e l a t e d d e f e c t s
A f t e r S C S I : neffN
= 0 . 0 2 4 t o 0 . 0 3 2 c m - 1
Donor removal:
The removal rate is not a constant-
= 0.1/Nd0
1011
1011
1012 1013
1013
1015
1014
1013
1015
1012 1014 1016
B e n e f i c i a l A n n e a l ( B A )
R e v e r s e A n n e a l ( R A )
days 10
V f d i n c r e a s e s w i t h a n n e a l i n g t i m e a f t e r a b o u t 1 0 d a y s a t R TN e f f b e c o m e s e v e n m o r e n e g a t i v e
2 0 h r s i n O 2 a t :
9 7 5 C
1 2 0 0 C( O x y g e n a t e d )
1 2 0 0 C( O x y g e n a t e d )
1 1 0 0 C
( N e u t r o n r a d i a t i o n )
• Possibly multiple annealing stages (two or more defects involved)
• First order process:
• Activated process:
with Ea = 1.18 eVand = 1013 s
• It can be frozen at low temperatures
kTEae /2/1
12ln
n
n
effN
N
073.0
035.0max
0
)1()( /max,0
treffeff eNNtN
0 10 20 30 40 50 60 70
(Thousands)Anneal Time (sec)
0
1
2
3
4
5
Ne
ff in
SC
R (
10
E1
2/c
m3
) 8.2E12
8.2E12
1.36E13
1.64E13
3.2E13
3.7 hr179 d14.6 yr96.8 yr
80200-10T (C)
3.7 hr179 d14.6 yr96.8 yr
80200-10T (C)
Z. Li , IEEE Trans. Nucl. Sci., Vol. 42, No. 4, (1995) 224
Reverse Annealing
Z. Li et al., IEEE Trans. Nucl. Sci., Vol. 42No. 4, (1995) 219
RT annealing
ET annealing
Neutron
Neutron
Proton
G.Lindstroem, presented on "1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders", CERN 28-30 November, 2001
Parameterization of Neff (As-irradiated and reverse annealing)
Neff = Neff0 - Neff
Neff = NA + NC + NY
NY : Reverse annealing
NA : Beneficial annealing
Stable defect
gY =0.0516 cm-1
Stable acceptor NC = NC0 (1-e-ceq) + gC eq
NC0 0.7xNd0
Removable donor
0
NY = NY, (1- 1/(1+t/Y ))
1/ Y = k0,Y exp(-EY/kBTa ) EY =1.33 eV
k0,Y =1.5x1015 /s
NA = NA0 exp(-t/a )
ga =0.018cm-1
1/ a = k0,a exp(-Eaa/kBTa )
Eaa =1.09 eV
k0,Y =2.4x1013 /s
c =0.1/Nd0
M. Moll, Ph.D. Thesis, University of Hamburg, 1999
Model for the reverse annealing
Z. Li et al., IEEE Trans. Nucl. Sci., Vol. 44, No. 3, (1997) 834
• Reverse annealing in n, p, alpha irradiated Si detectors (Clusters)
• No reverse annealing in gamma irradiated Si (Single defects only, no clusters)
• Reverse annealing may be due to the breaking off of clusters over time and temp, releasing single defects:
Clusters V-V or related defects
Releasing
Single defects
Double-Junction/Double-Peak (DJ/DP) Effect
DJ/DP effect and the 2-deep level model (Z. Li and H.W. Kraner, J. Electronic Materials, Vol. 21, No. 7, (1992) 701)
1.7x1014 n/cm2, Laser on p+
(D. Menichelli et al., NIM A426 (1999)135-139)
DL #D/A, 0/1 0 0 1 1
electrons holes electrons holes electrons holes electrons holes
Et=Edl-Ev 0.36 #REF! 0.52 #REF! 0.7 -0.7 0.6 -0.6sig/e[cm2] 1.00E-15 1.00E-15 1.00E-15 1.00E-15sig/h[cm2] 1.00E-15 1.00E-15 1.00E-15 1.00E-15Ndl[cm-3] 0.00E+00 4.60E+14 0.00E+00 4.00E+15
Ci-Oi Deep donor V-V Deep acceptor
0
5000
10000
15000
20000
25000
30000
0 50 100 150 200 250 300 350 400
x, mkm
E, V
/cm
0
5000
10000
15000
20000
25000
30000
35000
0 50 100 150 200 250 300 350 400
x, mkm
E, V
/cm
Detail Modeling of (DJ/DP) Effect
2-deep level model (V. Eremin et al, Nucl. Instrum. & Meth. A476 (2002) 556-564. )
Increasing V Increasing V
NIM A 476, (2002), 734
0
0.2
0.4
0.6
0.8
1
1.2
0 1E+14 2E+14 3E+14 4E+14 5E+14 6E+14
Fluence [p cm-2]
Q/Q
0
(Maximum collected charge)/Q0 - Ox. detectors
(Maximum collected charge)/Q0 - Non-ox. detectors
Data: Gianluigi Casse: 1st Workshop on Radiation hard semiconductor devices for high luminosity colliders; CERN; 28-30 November 2002
CMS microstrip + RO electronicsATLAS microstrip + RO electronics
= 1014n/cm2
Degradation in Charge Collection Efficiency (CCE)
)() 6
1
6
1(1)(
(10) )
)830(,)(2
11(
2
0
MIPtt
d
W
sidejunctionon
nmlasert
d
W
Q
QQCCE
tte
e
th
h
t
c
cc
B. Dezillie et al., IEEE Trans. Nucl. Sci., Vol. 46, No. 3, (1999) 221-227 Depletion Volume term
Trapping term
Radiation Hardness
OVVOV
VOOV
VVV
2
2
o Impurities intentionally incorporated into Si may serve to getterradiation-induced vacancies to prevent them from forming thedamaging V-V and related centerso Impurities: O, Sn, N, Cl, H, etc.
One example: oxygen O:
Competing processes for V
If [O] >>[V] and [V-O], then the formation rates of V2 and V2O will be
greatly suppressed:
Key: impurity concentration should be much larger than that of vacancies
Material/ impurity/defect Engineering (MIDE)
Defect kinetics model
PKA cluster reactions I + V Si V + V V2
Reactions
I + Cs Ci
V + O VO
Ci + Cs CC
I + V2 V V + P VP Ci + O CO
I + VP P V + VO V2O CO + I COI *
I + V3O V2O V + V2O V3O CC + I CCI *
* Not thought to be electrically active
I reaction V reaction Ci reaction
B. MacEvoy, 3rd ROSE Workshop 12-14 Feb 98
Material/ impurity/defect Engineering (MIDE)
More clustersfor n-rad
10 M eV protons 24 G eV /c protons 1 M eV neutrons
M ika H uhtinen -R O SE /T echn .N ote/2001 -02
10 M eV protons 24 G eV /c protons 1 M eV neutrons
M ika H uhtinen -R O SE /T echn .N ote/2001 -02
Defect structure modeling
Defect kinetics modeling
Both V2 and V2 O productions are greatly suppressed in oxygenated Si
S. Lazanu et al, RESMDD02, Florence, Italy, July 10-12, 2002
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
5
1 0
1 5
2 0
( 9 ) , . . .
( 8 )
( 7 )
( 6 )
( 5 )( 4 )
( 3 )( 1 )
[V2O
] [1
014 c
m-3
]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0- 2
0
2
4
6
8
1 0
1 2
1 4
( 1 1 ) , . . .
( 1 0 )( 9 )
( 8 )
( 7 )
( 6 )
( 5 )( 4 )( 3 )
( 2 )( 1 )
[CiO
i] [10
13 c
m-3
]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
2
4
6
8
1 0
1 2
( 1 0 ) , . . .
( 9 )( 8 )
( 7 )
( 6 )
( 5 )
( 4 )
( 3 )
( 2 )
( 1 )
[CiC
s] [10
14 c
m-3
]
T im e [ 1 08 s . ]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
1
2
3
4
( 4 ) , . . .
( 3 )
( 2 )
( 1 )
[V2O
] [1
017 c
m-3
]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
1
2
3
( 9 ) , . . .
( 8 )( 7 )
( 6 )
( 5 )
( 4 )
( 3 )
( 2 )( 1 )
[CiO
i] [10
15 c
m-3
]0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
2
4
6
8
1 0
1 2
( 1 0 ) , . . .
( 9 )( 8 )
( 7 )
( 6 )
( 5 )
( 4 )( 3 )
( 2 )
( 1 )
[CiC
s] [10
12 c
m-3
]T im e [ 1 0
8 s ]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
5
1 0
1 5
2 0
( 9 ) , . . .
( 8 )
( 7 )
( 6 )
( 5 )( 4 )
( 3 )( 1 )
[V2O
] [1
014 c
m-3
]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0- 2
0
2
4
6
8
1 0
1 2
1 4
( 1 1 ) , . . .
( 1 0 )( 9 )
( 8 )
( 7 )
( 6 )
( 5 )( 4 )( 3 )
( 2 )( 1 )
[CiO
i] [10
13 c
m-3
]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
2
4
6
8
1 0
1 2
( 1 0 ) , . . .
( 9 )( 8 )
( 7 )
( 6 )
( 5 )
( 4 )
( 3 )
( 2 )
( 1 )
[CiC
s] [10
14 c
m-3
]
T im e [ 1 08 s . ]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
1
2
3
4
( 4 ) , . . .
( 3 )
( 2 )
( 1 )
[V2O
] [1
017 c
m-3
]
0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
1
2
3
( 9 ) , . . .
( 8 )( 7 )
( 6 )
( 5 )
( 4 )
( 3 )
( 2 )( 1 )
[CiO
i] [10
15 c
m-3
]0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0
0
2
4
6
8
1 0
1 2
( 1 0 ) , . . .
( 9 )( 8 )
( 7 )
( 6 )
( 5 )
( 4 )( 3 )
( 2 )
( 1 )
[CiC
s] [10
12 c
m-3
]T im e [ 1 0
8 s ]
R a t e d e p e n d e n c e :( 1 ) G R = 5 x 1 0 9 V Ip a i r s / s . . .( 1 7 ) G R = 5 0 V Ip a i r s / s
" s t a n d a r d " S i :1 0 1 4 P , 2 1 0 1 5 O , 51 0 1 5 C
" o x y g e n a t e d " S i :1 0 1 4 P , 4 1 0 1 7 O , 51 0 1 5 C
0,0 0,5 1,0 1,5 2,0 2,5 3,0-1
0
1
2
3
4
5
6
7
8
(12), ...
(11)
(1)(2)
Standard Si.
(3)
(10)
(9)
(8)
(7)(6)
(5)(4)
[VO]
[10
14 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0-2
0
2
4
6
8
10
12
14
16
(7), ...
Oxygenated Si
(6)(5)
(4)
(3)
(2)
(1)
[VO]
[10
16 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
2
4
6
8
10
(7), ...
(6)(5)
(4)
(3)
(2)
(1)
[VP]
[10
12 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
2
4
6
8
10
(2), ...
(1)
[VP]
[10
12 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
1
2
3
4
5
Time [108 s.]
(6), ...
(5)(4)(3)
(2)
(1)
[V2]
[1017
cm-3
]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
5
10
15
20
25
Time [108 s.]
(2), ...
(1)
[V2]
[1016
cm-3
]
0,0 0,5 1,0 1,5 2,0 2,5 3,0-1
0
1
2
3
4
5
6
7
8
(12), ...
(11)
(1)(2)
Standard Si.
(3)
(10)
(9)
(8)
(7)(6)
(5)(4)
[VO]
[10
14 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0-2
0
2
4
6
8
10
12
14
16
(7), ...
Oxygenated Si
(6)(5)
(4)
(3)
(2)
(1)
[VO]
[10
16 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
2
4
6
8
10
(7), ...
(6)(5)
(4)
(3)
(2)
(1)
[VP]
[10
12 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
2
4
6
8
10
(2), ...
(1)
[VP]
[10
12 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
1
2
3
4
5
Time [108 s.]
(6), ...
(5)(4)(3)
(2)
(1)
[V2]
[1017
cm-3
]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
5
10
15
20
25
Time [108 s.]
(2), ...
(1)
[V2]
[1016
cm-3
]
0,0 0,5 1,0 1,5 2,0 2,5 3,0-1
0
1
2
3
4
5
6
7
8
(12), ...
(11)
(1)(2)
Standard Si.
(3)
(10)
(9)
(8)
(7)(6)
(5)(4)
[VO]
[10
14 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0-2
0
2
4
6
8
10
12
14
16
(7), ...
Oxygenated Si
(6)(5)
(4)
(3)
(2)
(1)
[VO]
[10
16 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
2
4
6
8
10
(7), ...
(6)(5)
(4)
(3)
(2)
(1)
[VP]
[10
12 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
2
4
6
8
10
(2), ...
(1)
[VP]
[10
12 cm
-3]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
1
2
3
4
5
Time [108 s.]
(6), ...
(5)(4)(3)
(2)
(1)
[V2]
[1017
cm-3
]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
5
10
15
20
25
Time [108 s.]
(2), ...
(1)
[V2]
[1016
cm-3
]
O x y g e n a t e dS t a n d a r d
DOFZ : Diffusion Oxygenated Float Zone Si Oxidation+long time diffusion in N2 at high T (up to 1150 °C) [Oi] up to 5·1017cm-3
developed in the framework of RD48 in 1998
Material/ impurity/defect Engineering (MIDE)
HTLT : High Temperature Long Time oxidation Oxidation in straight O2 at high T (up to 1200 °C) for up to 24 hrs [Oi] up to 4·1017cm-3, uniform up to 50 ms. developed at BNL in 1992
Review of Current Technologies
Advanced HTLT : High Temperature Long Time oxidation Oxidation in straight O2 at high T (up to 1200 °C) for up to 216 hrs [Oi] up to 4·1017cm-3, uniform up to 400 ms. developed at BNL in 1999
o Thermal donor (TD) suppression (no change in initial doping)o TD introduction (initial doping dominated by TD)
HTLT technology totally improve gamma radiation hardness
Vfd versus gamma dose for the BNL standard and HTLT O Diffused 1.1 kcm samples
0
50
100
150
200
250
300
350
0 50 100 150 200 250 300 350 400 450 500 550 600
Dose (Mrad)
Vfd
(V
) n
orm
alis
ed
to
300
m
HTLT O Diff, CVmeasurementHTLT O Diff, TCTmeasurementStandard, CVmeasurementStandard, TCTmeasurement
Vfd versus neutron fluence for BNL Si FZ
with 0 = 5 kcm
0
50
100
150
200
250
0 2E+13 4E+13 6E+13 8E+13 1E+14 1.2E+14
Neutron FLuence (n/cm2)
Vfd
(V
) n
orm
alis
ed t
o 3
00
m
Standard
HTLT O Diffused
HTLT technology does not improve neutron radiation hardnessconfirming BNL’s early results in 1994-95
o
B. Dezillie et al., IEEE Trans. Nucl. Sci., Vol. , No. , (2000) 1892-1897
Little improvement with regard to neutron radiation by HTLT
Maximum improvement with regard to gamma radiation by HTLT
Vfd versus proton fluence measured by
C-V on BNL 1.2 - 3 kcm wafers
0
50
100
150
200
250
300
350
0.E+00 1.E+14 2.E+14 3.E+14 4.E+14 5.E+14 6.E+14Proton fluence (p/cm2)
Vfd
(V) n
orm
alis
ed fo
r
300
m th
ickness
BNL #921: HTLT O Diffused + TDBNL #923: StandardBNL #903: HTLT O Diffused
= 0.0109
= 0.0047
no SCSI (TCT)
Oxygenation partially improve charged particle (p, ) radiation hardnessBy a factor of 2-3
B. Dezillie et al., IEEE Trans. Nucl. Sci., Vol. , No. , (2000) 1892-1897
RD48, NIM A 447 (2000), 116-125
Thermal donor are not removed:delay of SCSI
Model for the role of oxygen in rad-hardness
Particle type
Single defects
Defect clusters Oxygen
effect
n x xxxxxx
RV-V>>1
No
Charged particles (p, , etc.)
xxxx
RV-V <<1
xxPartial
xxxxxx
RV-V <<1
Yes1000 V’s 3 O’s
Z. Li et al., Nucl. Inst. & Meth., A461 (2001) 126-132
The local [O] is much smaller than [V] within the cluster
Material/ impurity/defect Engineering (MIDE)
The advantage of using low Si detectorsin high irradiated environments
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+12 1.E+13 1.E+14 1.E+15Neutron Fluence (n/cm2)
Ne
ff (
1/cm
3)
CZ, 100 Ohm cm (BNL)
FZ, 300-700 Ohm cm (BNL)
FZ, 6 kOhm cm (BNL)
FZ, 10 kOhm cm (Hamburg)
Vfd (V)d=300m
68002100
680
200
70
6
Low resistivity starting Si materialso Delayed SCSIo Lower Vfd at higher fluences
Nucl. Inst. Meth. A360 (1995) 445
Oxygen Dimers in Silicon
22222
2
;
;
OVVOVVOOV
OVVOVVOOV
neutral ?
V
Oi
V2O2
Thinner Detectors
S. Watts et al., presented at Vertex 2001
More radiation tolerance: For d = 50 m, the detector can be still fully depleted up to a fluence of 2-3x1015 n/cm2 at bias of 200 V:
o For a low starting resistivity Si (50 –cm), no SCSI up to 1.5x1015 n/cm2
o For high starting resistivity Si ( 4 k-cm), still fully depleted up to 3x1015 n/cm2 , even though SCSI taking place at about 1x1013 n/cm2.
Oxygen dimer O2i formed during pre-irradiation by Co60 -irradiation at 350ºC
Device Structure Engineering (DSE)• Multi-guard-ring system (MGS)
o To increase the detector breakdown voltageo High operation voltage to achieve more radiation toleranceo Up to 1000 volts can can be achieved (up to 6x1014 n/cm2 tolerance)o Both CMS and ATLAS pixel detector systems use MGS
JHU
• n on n and n on p detectors
o Not sensitive to SCSIo Both CMS and ATLAS pixel detector systems use n on n
p+ back
sideMGS
n+ pixel
Multi-guard-ring system (MGS)
p-type n-pixel with various guard-rings
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
0 200 400 600 800 1000 1200Vbias (V)
I gu
ard (
A)
1 GR
4 GR
7 GR
11 GR
G. Bolla et al., NIM A435 (1999) 178
3-d Detector
Sherwood I. Parker et al., UH 511-959-00
n
n
pp
n
n n
n
n
n
pp
n
n n
n
Depletion
100 m
o Differ from conventional planar technology, p+ and n+ electrodes are diffused in small holes along the detector thickness (“3-d” processing)o Depletion develops laterally (can be 50 to 100 m): not sensitive to thicknesso Much less voltage used --- much higher radiation tolerance
Non-planar process
Vfd reduced up to a factor of 8-10
Other Novel Structures
p+- n+ /n/p+ configuration (low resistivity)
Vfd reduced up to a factor of 3-4
Two-sided process-
p+- n+ /n/p+ configuration (low resistivity)2-sided processDepletion from both sidesCan be fully depletedfrom the beginning
Z. Li, 9th Vienna Conference on Instrumentation, Vienna, Austria, February 19-23, 2001
p+- n+ /n/n+ configuration(Medium resistivity)
• Low bias at the beginning
• p+- n+ /n/n+ configuration:o Depletion from one side before SCSI
o Depletion from both sides after SCSI
• May work up to 1x1015 n/cm2 rad.
• One sided processing
• Bias Vb may be larger than Vf to get maximum depletion depth without break down
Z. Li, 9th Vienna Conference on Instrumentation, Vienna, Austria, February19-23, 2001
p+- n+ /n/n+ configuration (Medium to high resistivity)
• Before radiation, Neff= +1x1012 /cm3 (4 k-cm)
• Junction on the p+ contacts Simulation, V = 100 volts
p+ electrodeto pre-amps
n+ electrode+ bias
n+ electrode+ bias
n+ electrode+ bias
Potentialcontour
Electronconcentration
• After radiation, Neff= -1x1013 /cm3 (5x1014n/cm2)
• Junction on the n+ contacts Simulation, V = 130 volts (<<370 volts)
Holeconcentration
n+ electrode+ bias
n+ electrode+ bias
n+ electrode+ bias
p+ electrodeto pre-amps
Potentialcontour
Z. Li, 9th Vienna Conference on Instrumentation, Vienna, Austria, February 19-23, 2001
Vfd reduced up to a factor of 3-4
Single-sided process!
Other Novel Structures
Properties of Si as compared to other Semiconductors
Lattice const.
(
Å)
Density (g/cm3)
Eg
(eV)
Dielec Const.
Disp. threshold E (eV)
e-h
creat E
(eV)
e (cm/s/V)
h (cm/s/V)
Rad. Leng
th (cm)
e-
h/0.3%X0[e]
C 3.567 3.5 5.5 5.7 80 13-17
1800 1200 12 7.2k
SiC 3.086 15.117
3.2
3.3
9.7
30?
9
400- 900
20-50
8.1
13k
GaP 5.4512 4.1 2.8 11 10 8 110 75 3.5 5.2k CdS 5.8320 4.8 2.5 9.1 8 7.6 340 50 2.1 7.2k
CdTe 6.482 5.9 1.49 10 6.7 5 1050 100 1.5 6.6k GaAs 5.653 5.3 1.43 13.1 9 4.8 8500 400 2.3 11k InP 5.869 4.8 1.34 13 7.5 4.2 4600 150 2.1 8.9k
Si 5.431 2.3 1.12 11.9 13.5 3.6 1450 450 9.4 24k
Ge 5.646 5.3 0.66 16 15 3 3900 1900 2.3 16k
New Materials
SiC is a most promising material for radiation detection. The 3.3eV gap provides very low leakage currents at room temperature and a mip signal of 5100e per 100m. Epitaxial SiCSchottky barriers have been successfully tested as alpha detectors and showed a 100% CCE after 24GeV/c proton irradiation up to 1014 cm-2.
oOther semiconductor materials may have to be used for extremely high radiation (>1x1016 n/cm2 )
Diamond, SiC, etc.
Future RD50 Tasks
o More studies in the fields of: MIDE --- O and other impurities: H, Cl, N, oxygen-dimer, etc. DSE --- Realize 3D and semi-3D detectors, and thin detectors (push rad-hardness/tolerance to a few times of 1x1015 n/cm2)
o Make detectors with combined technologies:Oxygenated detectors with MGS and/or 3D and novel detector structuresOxygenated low resistivity detectors with MGS and/or 3D and novel detector structuresAnd so on(push rad-hardness/tolerance close to 1016 n/cm2) o Other semiconductor materials for extremely high radiation SiC, etc.(push rad-hardness/tolerance over 1x1016 n/cm2)
Summaryo Different particles cause different displacement damage in Si material and detectors
o Radiation-induced damages cause detector electrical properties todegrade: increase of detector leakage current compensation of Si bulk (intrinsic bulk resistivity) increase of negative space charge during radiation and annealing space charge maybe modified by charge trapping
o To obtain ultra high Radiation hardness/tolerance, newly-formed CERN RD50 Collaboration is poised to carry out various tasks Material/impurity/defect engineering Device structure engineering Detector operation and modeling Full detector integration Other semiconductor materials for extreme radiation (> 1016 n/cm2)
1st RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, CERN 2-4 October, 2002http://rd50.web.cern.ch/rd50/1st-workshop/default.htm