Post on 06-Nov-2019
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Three-Dimensional Electro-Thermal Circuit Model of Power Super-Junction
MOSFET
Sep. 20, 2013 Bucharest MOS Modeling and Parameter Extraction Working Group11th MOS-AK/GSA ESSDERC ESSCIRC Workshop
Aleš Chvála
Slovak University of Technology in Bratislava
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Motivation
Development and calibration of electro-thermal MOSFET model for power technology
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Outline
• Introduction
• Electrical compact model of Super Junction MOSFET
• Electrical equivalent of three-dimensional thermal system
• Experiment and model verification (UIS test)
• Conclusions
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
• Circuit simulators are standard tools in the development and optimization of electronic systems
• SPICE-like models provide faster results but in general do not take into account nonlinear thermal dependences of certain parameters
• Properties of power semiconductor devices are very strongly temperature-dependent
• Self-heating and dynamic interdependence between electrical and thermal components of corresponding model need to be implement
INTRODUCTION
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Super Junction MOSFET – high voltage technology (BV ~ 600V)
For analysis novel locally charge balancedtrench based super-junction n-channelpower MOSFET was used. Samples exceedV(BR)DSS ~ 600 V, VGSTH = 4 V,RON = 23mΩ/cm2 and single pulse drain-to-source avalanche energy EAS = 800 mJ forL = 10mH
ELECTRICAL COMPACT MODEL
T. Fujihira, “Theory of Semiconductor SuperJunction Devices,” Jpn J. Appl. Phys, 36(10), pp. 6254-6262, 1997.
P. Moens, et al., “UltiMOS: A Local Charge-Balanced Trench-Based 600V Super-Junction Device,” proc. of the 23rd International Symposium on PowerSemiconductor Devices & ICs, ISPSD, pp. 304-307, 2011.
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Die
Lead framePackage
S D
G
ELECTRICAL COMPACT MODELSuper Junction MOSFET
2D doping concentration DPAK2 package
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Thermal systemElectrical circuit
PowerPower
Temperature
Circuit electro-thermal model
INTRODUCTION
Interaction between electrical and thermal parts
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Gate
CGD RD
RSCGS
DB
VBRRL
VT0 - threshold voltageRD - drain resistivityDB - body diodeVBR - breakdown voltageRL - leakage resistanceSBURN - thermal burning
CDSVT0
RBR
RDB
=f(Temperature)
SBURN
PowerPower
Temperature
Thermal system
Simple model + Real device effects
ELECTRICAL COMPACT MODEL
SPICE Level...BSIM...
Drain
Source
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Breakdown characteristicsof SJ MOSFET
Transfer characteristicsof SJ MOSFET
ELECTRICAL COMPACT MODEL
T (K)
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
CV characteristics of SJ MOSFET
ELECTRICAL COMPACT MODEL
Measurement setup for CGS, CGD
and CDS measurements
H.Suto et.al, 'Methodology for Accurate C-V Measurements of GateInsulators below 1.5nm EOT', Extended Abstracts of the 2002 Int'l Conf. on Solid State Devices and Materials, Nagoya, pp. 748-749
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Thermal destruction (SBURN)
ELECTRICAL COMPACT MODEL
BLACKBURN, D. L. Power MOSFET failure revisited, In Power Electronics Specialists Conference PESC '88, Kyoto, Japan, 1988, pp. 681-688.
Donoval, D., Vrbicky, A., Marek, J., Chvala, A., Beno, P., "Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour", Solid-State Electronics, 52, pp. 892-898, 2008.
Destructive energy3/4 vs. starting temperature and respective extrapolation of maximum device temperature
Estimate of device temperature from VDS(Breakdown) = f(temperature)
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Source
Drain
Gate
CGD RD
RSCGS
DB
VBRRL
VT0 - threshold voltageRD - drain resistivityDB - body diodeVBR - breakdown voltageRL - leakage resistanceSBURN - thermal burning
CDSVT0
RBR
RDB
=f(Temperature)
SBURN
PowerPower
Temperature
Thermal system
Simple model + Real device effects
SPICE Level...BSIM...
EQUIVALENT THERMAL CIRCUIT
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Thermal system
d1
d2
d3
P(t) A
Cth1
Cth2
Cth3
Rth1
Rth2
Rth3
Tj
Heat sink T(0,t)
- Power
- Junction temperature
- Thermal capacity
- Thermal resistivity
Electrical equivalent
P(t) [W] ~ I(t) [A]Tj [K] ~ VTj [V]Cth [Ws/K] ~ C [F]Rth [K/W] ~ R [Ω]
A
dRR i
ithi
AdcCC iithi
VTj
EQUIVALENT THERMAL CIRCUIT
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Thermal coefficients RC network with constant element
RC network with temperaturedependent resistances
2cTbTa
- constant
A
dRR i
ithi
Si – strong temperature dependent
T(K) 300 400 500
c(J/(K cm-3) (W/cmK)
Si 1.63 1.55 1.09 0.82
Cu 3.42 4.01 4.00 3.98
takes into account temperature dependence of thermal conductivity
EQUIVALENT THERMAL CIRCUIT
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
ii
ithxi
zy
xRR
xi
iiithi zyxcCCi
| xi |
__
yi
__ __zi
__
| xi | | xi |
__
yi
__
iR
2
iC
2
xiR
4
iC
8
iC4
xiR
1-D 2-D 3-D
Multi-dimensional thermal flow
EQUIVALENT THERMAL CIRCUIT
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
EQUIVALENT THERMAL CIRCUIT
8 x 8 MOSFETs are connected taking intoaccount parasitic resistances of thepoly-Si gate electrode and metal sourceelectrode
Heat distribution at avalanche conditions
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Thermal equivalent network
VT0 - threshold voltageRD - drain resistivityDB - body diodeRL - leakage resistanceVBR - breakdown voltageSBURN - thermal burning
Electrical circuit
CDS
CGD =f(VDS)CGS
=f(VTj)
COMPACT MODEL OF POWER MOSFET
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
EXPERIMENT AND MODEL VERIFICATION
Simplified UIS test circuit and current and voltage waveforms of the tested device under UIS test conditions
dti(t)VEAVt
(BR)effAS 0
0 , 2
1 2 S ASAS RLIE
Unclamped Inductive Switching (UIS) test
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Model with temperature-dependent RC network bettercorresponds the measurement
UIS test characteristics of the SJ MOSFET
EXPERIMENT AND MODEL VERIFICATION
Measurement
Temperature-dependent RC network
Standard RC network
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Comparison of destructive currents for different values of inductances
EXPERIMENT AND MODEL VERIFICATION
UIS test characteristics of the SJ MOSFET
Suitable thermal properties andanalysis provide realistic results
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
EXPERIMENT AND MODEL VERIFICATION
Multipulse UIS test characteristics of the SJ MOSFET
Temperature distribution at thebeginning of the tenth UIS pulseinside the structure
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
EXPERIMENT AND MODEL VERIFICATION
Multipulse UIS test characteristics of the SJ MOSFET
Current density distribution at thebeginning of the tenth UIS pulseinside the structure
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Conclusions
Three-dimensional electro-thermal circuit model of power Super-Junction MOSFET was introduced.
Implementation of real device effects and appropriate thermal properties are important for correct simulations results.
The simulations with implemented three-dimensional thermal flow and distributed properties of the power MOSFET provide more accurate results.
Slovak University of TechnologyInstitute of Electronics and Photonics
MOS-AK WorkshopBucharest 2013
Thank you for your attention
Acknowledgements This work has been done with support of 7FP project SMAC, no. 288827
and grant VEGA 1/0866/11.