Post on 26-Dec-2015
Synthesis of Synthesis of
nanoheterostructures: nanoheterostructures: generating prospects generating prospects
for "pure" energyfor "pure" energy O. Pchelyakov O. Pchelyakov 11, , SS. . TokmoldinTokmoldin 22
1)1) Institute of Semiconductor PhysicsInstitute of Semiconductor Physics,, S Siberian iberian BBranch of Russian Academy of Sciences,ranch of Russian Academy of Sciences, Academgorodok, Academgorodok, Novosibirsk , RussiaNovosibirsk , Russia2) 2) Physical-technical Institute, Almaty , KazakhstanPhysical-technical Institute, Almaty , Kazakhstan
OUTLINEOUTLINE
IntroductionIntroduction
MMotivationotivation for Applications of Nanostructures in for Applications of Nanostructures in
Photovoltaic and the Example of Photovoltaic and the Example of Ge/Si Ge/Si
NanoheterostructuresNanoheterostructures
Molecular Beam Epitaxy of Nanostructures Molecular Beam Epitaxy of Nanostructures
for Photovoltaic Applications - for Photovoltaic Applications - way to high efficiency way to high efficiency
solar cellsolar cell
Prospects of mutual development of semiconductor Prospects of mutual development of semiconductor
vacuum nanotechnologies including space technologyvacuum nanotechnologies including space technology
MMotivationotivation for Applications of for Applications of Nanostructures in Photovoltaic and the Nanostructures in Photovoltaic and the Example of Example of Ge/Si Nanoheterostructures Ge/Si Nanoheterostructures
Heterostructures with germanium nanoclusters in Heterostructures with germanium nanoclusters in silicon are now regarded as a new class of materials silicon are now regarded as a new class of materials for photovoltaic with the purpose of application in for photovoltaic with the purpose of application in solar cells. Experimental results in this field are very solar cells. Experimental results in this field are very promising as to nanotechnology application in high promising as to nanotechnology application in high power efficiency Si-based optoelectronic and power efficiency Si-based optoelectronic and photovoltaic. photovoltaic.
Record solar cell efficiencies for multijunction concentrator cells andother photovoltaic technologies since 1975, as compiled by the National Renewable
Energy Laboratory (NREL). (Courtesy of R. McConnell, NREL) 2008
PROGRESS IN SOLAR CELL EFFICIENCIESPROGRESS IN SOLAR CELL EFFICIENCIES
24%24%
NanotechnologyFor Solar Cell
The simplified energy-band structure of solar batteries with intermediate band (IPB)
[A.Luque and A.Martý, Phys. Rev. Lett., v. 78, No. 26, 1997]
Photovoltaics for thePhotovoltaics for the 21st century21st century
Kin Man Yu and Wladek Kin Man Yu and Wladek Walukiewicz Berkeley Lab Walukiewicz Berkeley Lab
20042004
SELF-ORDERED Ge/Si QUANTUM DOTSELF-ORDERED Ge/Si QUANTUM DOT INTERMEDIATE INTERMEDIATE BANDBAND PHOTOVOLTAIC SOLAR CELLSPHOTOVOLTAIC SOLAR CELLS
A. M. Kechiantz, K.W. Sun, H.M. Kechiyants, L. M. A. M. Kechiantz, K.W. Sun, H.M. Kechiyants, L. M. KocharyanKocharyan. . IntInt.. Scientific Journal for Alternative Energy Scientific Journal for Alternative Energy
and Ecology ISJAEE 12(32) (2005)and Ecology ISJAEE 12(32) (2005)
Cathode
Semiconductor with IPB
Cathode
FCEL
IBEGEH
1
2FI
FV
e
VB
V
CBp +
n+
E
E
E
6363% !!!% !!!
STM images of SiSTM images of Si(111)-7(111)-7××7 7 surfacesurfaceon initial growth stages of Ge nanoclusterson initial growth stages of Ge nanoclusters
а) 0а) 0..02 БС 7х7 нм02 БС 7х7 нм б) 0б) 0..17 БС 14х14 нм17 БС 14х14 нм в) 0в) 0..4 БС 23х23 нм4 БС 23х23 нм
O.P. Pchelyakov, A.I. Nikiforov, B.Z. Olshanetsky, S.A. Teys, A.I.O.P. Pchelyakov, A.I. Nikiforov, B.Z. Olshanetsky, S.A. Teys, A.I.Yakimov and S.I. Chikichev, MBE growth of ultra small coherent Ge quantum dots inYakimov and S.I. Chikichev, MBE growth of ultra small coherent Ge quantum dots insilicon for applications in nanoelectronics, silicon for applications in nanoelectronics, Journal of Physics and Chemistry of SolidsJournal of Physics and Chemistry of Solids
(2007)(2007)
Perspective Perspective nanonanostructures on silicon for structures on silicon for photo-electro-generators photo-electro-generators
withwith Ge Ge quantum quantum dotsdots in in SiSiMgFMgF22/ZnS/ZnS
Ag Ag контактконтакт
Ge quantum dots in i-Si (50 layers)
AlAl contactcontact
n- Si: 10n- Si: 10нмнм 1x10 1x101919смсм-3-3 ( (Sb)Sb)
p+Si substrate
р- Si buffer
Karl Brunner
Quantum efficiency of solar cellsQuantum efficiency of solar cells
With quantum dots
Without quantum dots
Thermophotovoltaic conversion, with Thermophotovoltaic conversion, with concentrator optics and narrow pass filterconcentrator optics and narrow pass filter
Design of thermophotovoltaic system Design of thermophotovoltaic system
Point Back Side Contacts Solar CellsPoint Back Side Contacts Solar Cells
Back-point-contact Si solar cellBack-point-contact Si solar cell
Front surface of Si solar cells Front surface of Si solar cells (3” float-zone Si wafer)(3” float-zone Si wafer)
Comparison with experimental I-V Comparison with experimental I-V characteristiccharacteristic
R.M.Swanson, Point-Contact Solar Cells: Modelling and Experiment, Solar Cell 17 (1986), 85-113.R.M.Swanson, Point-Contact Solar Cells: Modelling and Experiment, Solar Cell 17 (1986), 85-113.
The cutting and stuck together solar batteryThe cutting and stuck together solar battery
Installation Installation “Katun”“Katun”
The plan of arrangement of MBE installation
at the international space station
PHYSICAL-TECHNICAL INSTITUTE OF ALMATY KAZAKHSTAN
Саммит в Новосибирске 2007 Саммит в Новосибирске 2007 Соглашение по организации научно-Соглашение по организации научно-образовательного инновационного образовательного инновационного
партнерства «Нанотехнология»партнерства «Нанотехнология»
Международнаянанотехнологическая лаборатория
распределённого типа
Россия - Казахстан - США
Физико-технический институт, Алматы, Казахстан
Проект “Сауле”производство высокоэффективных
солнечных энергоустановок
Проект “Нанофабрика”Россия - Казахстан
технологическая и аналитическая база наноиндустрии будущего
Проект “Аметист”Россия - США - Казахстан
создание орбитальной минифабрикипо производству
наногетероструктур
Институт физики полупроводников СО РАН,
РКК «Энергия» им. С.П. Королева,Центр перспективных материалов
университетаг. Хьюстон, США
Научнообразовательныйцентр НОЦ “Перспективные материалы и технологии”
-
Санкт-Петербургский Физико-технологический институт, Научно-образовательный центр РАН
Ульбинскийметаллургическийзавод, Казахстан
Нанотехнологическая
компания “НТ-МДТ”г. Зеленоград,
Москва
Российские и Казахстанские университеты, НИИ, компании
Possible configuration of installation "Shield"Possible configuration of installation "Shield"
Blinov V.V., Zvorykin, L.L., Ivanov, A.I., Ignatyev, Blinov V.V., Zvorykin, L.L., Ivanov, A.I., Ignatyev, АА.., , Mashanov, V.I, PreobrazhenskiyV.V., Pcheljakov O. P., Sokolov LMashanov, V.I, PreobrazhenskiyV.V., Pcheljakov O. P., Sokolov L..VV..
Patent RF on The device for MBE growth of nanomaterials in an outer space Patent RF on The device for MBE growth of nanomaterials in an outer space № № 20081188352008118835, 03.04/2009, 03.04/2009
Rockets Space Corporation “Energy” NT-MDT CompanyRockets Space Corporation “Energy” NT-MDT Company
AFM - AFM - microscopemicroscope
Space MBE systemSpace MBE system
International Space StationInternational Space Station
ISP SB RAS PATENT № 2008118835, Priority 12.05.2008
Space Resources for Experiments
«ОКА-Т» №1 (2012-2015) «ОКА-Т» №1 (2012-2015) andand №2 (2015-2019) №2 (2015-2019)
««WozwratWozwrat--ISSISS» (2014г.)» (2014г.)1,5 kw, 250 kg, 1-2 years, 1,5 kw, 250 kg, 1-2 years,
Height of an orbit in apogee - Height of an orbit in apogee - 200000 km 200000 km
International SpaceInternational Space StationsStations
Central Research Institute of Engineering IndustryCentral Research Institute of Engineering Industry
Prospects for the international cooperationProspects for the international cooperationNew generation of nanoelectronics, nanophotonics and photovoltaic New generation of nanoelectronics, nanophotonics and photovoltaic
Joint investigation of fundamental processes on clean surface Joint investigation of fundamental processes on clean surface
of semiconductors during MBE, CBE and CVD growth of of semiconductors during MBE, CBE and CVD growth of
nanostructures including space vacuum technologynanostructures including space vacuum technology
Joint experimental studies, theoretical modeling and analyses Joint experimental studies, theoretical modeling and analyses
of electron and optical properties of nanostructuresof electron and optical properties of nanostructures
Joint research, development and production of new types of Joint research, development and production of new types of
nanoscale heterostructures for photodetectors and nanoscale heterostructures for photodetectors and
phototransistors, for research and industrial application in phototransistors, for research and industrial application in
night vision systems and in high efficiency solar cellnight vision systems and in high efficiency solar cell
Joint development and production of optimized Joint development and production of optimized
nanotechnological equipment for MBE, CBE, CVD and so onnanotechnological equipment for MBE, CBE, CVD and so on
Mutual contacts, scientific conferences and workshopsMutual contacts, scientific conferences and workshops
Thank youThank you for attentionfor attention