SLA-SH®

Superiority of CWM Implant Surface When Superiority meet Dental Implant Surface…

For Simpler, Speedier, Safer and Superior Implant Dentistry

Contents

1. Overview of Surface Treatment History

2. SEM & EDAX

3. 3D Illumination Photometry

4. IC & ICP Analysis

5. XPA Analysis

When Superiority meet Dental Implant Surface…

1990’ 2000’ 2010’ 2015

SLA-SH Surface

Late Placement Marginal bone change Immediate Placement & Faster Healing

Overview

When Superiority meet Dental Implant Surface…

2. SEM / EDAX

• Test Center :

Dong-Eui University

• Experimental Material :

1 pc of randomly selected implant from each manufacturer

• SEM : Scanning Electron Microscopy

• EDAX or EDX : Energy Dispersive X-ray microanalysis

When Superiority meet Dental Implant Surface…

For Easier, Simpler & Safer Implant Dentistry Cowellmedi INNO Osstem TS Ⅲ SA

31X 31X

NeoBiotech IS-Ⅱ active Dentium Super Line

31X 31X

For Easier, Simpler & Safer Implant Dentistry Cowellmedi INNO Osstem TS Ⅲ SA

31X 31X

NeoBiotech IS-Ⅱ active Dentium Super Line

31X 31X

For Easier, Simpler & Safer Implant Dentistry Cowellmedi INNO Osstem TS Ⅲ SA

31X 31X

NeoBiotech IS-Ⅱ active Dentium Super Line

31X 31X

Cowellmedi INNO Sample A

300X 300X

Sample B Sample C

300X 300X

Cowellmedi INNO Osstem TS Ⅲ SA

Upper 1000X

Upper 1000X

NeoBiotech IS-Ⅱ active Dentium Super Line

Upper 1000X

Upper 1000X

Cowellmedi INNO Sample A

Upper 3000X

Upper 3000X

Sample B Sample C

Upper 3000X

Upper 3000X

Cowellmedi INNO Sample A

Upper 5000X

Upper 5000X

Sample B Sample C

Upper 5000X

Upper 5000X

Cowellmedi INNO Sample A

20000X Upper

20000X Upper

Energy - keV

Energy - keV

EDAX EDAX

Element Wt% At%

NK 00.92 03.08

SiK 00.64 01.07

TiK 98.43 95.86

Matrix Correction ZAF

The foreign substance is not removed and it seems masking material

Element Wt% At%

TiK 100.00 100.00

Matrix Correction ZAF

Sample B Sample C

20000X Upper

20000X Upper

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

NK 03.01 09.59

TiK 96.99 90.41

Matrix Correction ZAF

Element Wt% At%

NK 01.25 04.16

TiK 98.75 95.84

Matrix Correction ZAF

Cowellmedi INNO Sample A

20000X Middle

20000X Middle

Energy - keV

Energy - keV

EDAX EDAX

Element Wt% At%

CK 03.21 10.70

NK 04.10 11.74

TiK 92.69 77.56

Matrix Correction ZAF

Foreign substance exists

Element Wt% At%

TiK 100.00 100.00

Matrix Correction ZAF

Sample B Sample C

20000X Middle

20000X Middle

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

NK 00.89 02.99

TiK 99.11 97.01

Matrix Correction ZAF

Element Wt% At%

CK 02.66 08.58

NK 03.13 08.66

OK 04.07 09.86

TiK 90.14 72.90

Matrix Correction ZAF

Foreign Substance exists

Cowellmedi INNO Sample A

20000X Lower

20000X Lower

Energy - keV

Energy - keV

EDAX EDAX

Element Wt% At%

NK 01.88 06.16

TiK 98.12 93.84

Matrix Correction ZAF

Element Wt% At%

TiK 100.00 100.00

Matrix Correction ZAF

Sample B Sample C

20000X Lower

20000X Lower

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

NK 03.56 11.20

TiK 96.44 88.80

Matrix Correction ZAF

Element Wt% At%

NK 05.14 15.54

AlK 00.79 01.24

TiK 94.07 83.22

Matrix Correction ZAF

Foreign Substance (alumina) exists because the sample is sandblasted with alumina and not washed

completely

Sample C Sample C

Foreign Substa

nce

Foreign Substan

ce

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

CK 51.69 81.01

TiK 48.31 18.99

Matrix Correction ZAF

소견 : 불순물 제거가 안되는 현상으로 보임

Element Wt% At%

CK 62.19 74.30

NK 06.13 06.28

OK 16.39 14.70

SiK 01.03 00.53

MoL 01.63 00.24

ClK 01.58 00.64

TiK 11.05 03.31

Matrix Correction ZAF

TBore part / Masking material left

Sample B Sample B-2

Foreign Substan

ce

Foreign Substan

ce

Energy - keV

Energy - keV

EDAX EDAX

Element Wt% At%

CK 06.43 21.39

SiK 01.05 01.49

TiK 92.52 77.12

Matrix Correction ZAF

Element Wt% At%

NK 04.65 14.29

TiK 95.35 85.71

Matrix Correction ZAF

Improvement

The way to sort out : Changing sending media & Acid treatment before & after sending media

No complete wash out before & after masking

Cowellmedi INNO - 2 Sample B-2

20000X Lower

20000X Lower

Energy - keV

Energy - keV

EDAX EDAX

Element Wt% At%

NK 05.43 16.41

TiK 94.57 83.59

Matrix Correction ZAF

Element Wt% At%

TiK 100.00 100.00

Matrix Correction ZAF

Sample C-2 Sample C-3

20000X Upper

20000X Upper

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

NK 02.46 07.59

AlK 06.45 10.32

TiK 91.09 82.09

Matrix Correction ZAF

Element Wt% At%

CK 05.97 19.27

NK 02.39 06.62

TiK 91.63 74.11

Matrix Correction ZAF

Sample C - 2 Sample C - 2

Foreign Substan

ce

Foreign Substan

ce

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

CK 12.43 33.60

NK 03.59 08.32

NaK 01.04 01.47

AlK 00.74 00.89

TiK 82.20 55.72

Matrix Correction ZAF

Element Wt% At%

CK 08.78 25.69

NK 03.83 09.60

AlK 01.09 01.42

TiK 86.29 63.28

Matrix Correction ZAF

Sample C - 2 Sample C - 2

Foreign Substan

ce Foreign Substance

Foreign Substan

ce

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

NK 01.44 03.37

OK 19.08 39.19

NaK 01.10 01.56

AlK 03.95 04.81

TiK 74.43 51.06

Matrix Correction ZAF

Element Wt% At%

CK 51.69 81.01

TiK 48.31 18.99

Matrix Correction ZAF

Sample C - 3 Sample C - 3

Foreign Substan

ce

Foreign Substan

ce

Energy - keV

Energy – keV

EDAX EDAX

Element Wt% At%

CK 04.89 14.17

NK 03.43 08.50

OK 05.12 11.13

AlK 05.97 07.70

TiK 80.58 58.50

Matrix Correction ZAF

Element Wt% At%

CK 04.61 14.16

NK 00.70 01.85

OK 04.62 10.65

AlK 06.54 08.95

TiK 83.53 64.39

Matrix Correction ZAF

Sample B Sample C-3

Foreign

Substance

Foreign

Substance

Sample C-2 Sample C-2

Foreign

Substance

Foreign

Substance

Surface is very uneven due to the lack of reaction time, temperature, post cleaning and concentration.

Surface is very uneven due to the lack of reaction time, temperature, post cleaning and concentration.

3. 3D Illumination Photometry

• Test Center :

Daegu Mechatronics & Material Institute

• Experimental Material :

1 pc of randomly selected implant from each manufacturer

• 3 D illumination Photometry :

3-Dimensional Interactive Display – Surface roughness

When Superiority meet Dental Implant Surface…

3D Ra=2.53um

3D Ra=2.7um

CWM-INNO ASD (Alumina Sanding)

3D Ra=2.03um

3D Ra=1.815um 2D Ra=1.312um

CWM-SLA (RBM Sanding)

3D Ra=1.875um 2D Ra=1.377um

CWM-SLA+NaOH (RBM Sanding)

Sample A

3D Ra=2.79um 2D Ra=1.997um

Sample B

3D Ra=1.1um 2D Ra=0.687um

Sample C

3D Ra=2.37um 2D Ra=1.757um

Comparison

Cowellmedi INNO Ra= 1.57um~1.78um

Sample A Ra= 1.48um~3.11um

Sample B Ra= 0.61um~1.13um

Sample C Ra= 1.31um~2.65um

Div. Ra=0.21um

Div. Ra=1.63um

Div. Ra=0.52um

Div. Ra=1.34um

1

4

2

3

Min. Max. Uniform.

1

3

4

2

Ave.

4. IC & ICP Analysis

• Test Center :

KRISS (Korea Research Institute of Standards and Science)

• Experimental Material :

4 pcs of randomly selected implant from each manufacturer

• IC : Ion chromatograph – separation & quantitative analysis in

cation & anion ion of organic & inorganic molecule

• ICP : Inductively coupled plasma-atomic emission spectrometer

Metal element analysis using inductively coupled plasma

AES (Many elements can be analyzed at once )

When Superiority meet Dental Implant Surface…

IC

CWM-SLA 4ea

Sample A

4ea

Sample B

4ea

Sample C

4ea

CWM SLA 10ea

CWM SLA+ NaOH (10ea)

ICP

CWM - SLA 4ea

A

4ea

B

4ea

C

4ea

CWM-SLA 10ea

SLA+ NaOH 10ea

Non NaOH treamented sample shows Na

5. XPA Analysis

• Test Center :

- KRISS (Korea Research Institute of Standards and Science)

- ECC (Electro Ceramics Center)

• Experimental Material :

1 pc of randomly selected implant from each manufacturer

• XPA : X-ray Photoelectron Spectroscopy

- To analyze composition and chemical bonding statue measuring

photoelectron energy by X-ray of incident light to surface of the

samples, which enables to map element composition per portion

and depth profiling.

When Superiority meet Dental Implant Surface…

Testing

Center Testing Provision

Cowellmedi (2012.07.06)

A (2012.04.06)

B (2012.04.06)

C (2012.04.06)

ECC

EDAX-Upper Si N/D 0.64 N/D N/D

EDAX-Middle

C N/D 3.21 2.66 N/D

O N/D N/D 4.07 N/D

EDAX-Lower Al N/D N/D 0.79 N/D

KRISS

IC

CI 0.012 0.024 0.027 0.071

NO2 N/D 0.027 0.019 0.02

NO3 0.028 0.031 0.03 0.023

SO4 N/D 0.002 0.002 N/D

ICP Na N/D N/D N/D N/D

Si N/D 0.02 N/D N/D

XPS-Upper

N N/D 0.47 1.57 N/D

Na N/D N/D N/D N/D

P N/D N/D N/D N/D

Si N/D 5.24 4.87 2.65

XPS-Middle N 3.77 2.17 1.8 0.99

Si N/D 5.95 N/D N/D

XPS-Lower N N/D 0.92 2.35 1.22

Si N/D 4.67 N/D N/D

Comparison

1 4 3 2 Rank

3th distilled water applied when final cleansing

When Superiority meet Dental Implant Surface…

Thank you !