RQ3E070BN : Transistors · RQ3E070BN Datasheet lMeasurement circuits Fig.1-1 Switching Time...

RQ3E070BN　　Nch 30V 7A Middle Power MOSFET 　　 Datasheet

llOutlineVDSS 30V HSMT8 　　　　　　

RDS(on)(Max.) 27mΩ 　

ID ±7A 　　

PD 2W 　　

llInner circuitllFeatures1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.

llPackaging specifications

Packing EmbossedTape

Reel size (mm) 330llApplication Tape width (mm) 12Switching Basic ordering unit (pcs) 3000

Taping code TB

Marking E070BNllAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit

Drain - Source voltage VDSS 30 V

Continuous drain current ID ±7 A

Pulsed drain current ID,pulse*1 ±28 A

Gate - Source voltage VGSS ±20 V

Power dissipation PD*2 2 W

Junction temperature Tj 150 ℃

Range of storage temperature Tstg -55 to +150 ℃

RQ3E070BN 　　　　　　　　　　　　　　 Datasheet

llThermal resistance 　　　　　　　　　　　　　　　　　　

Parameter SymbolValues

UnitMin. Typ. Max.

Thermal resistance, junction - ambient RthJA*2 - 62.5 - ℃/W

llElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Drain - Source breakdownvoltage V(BR)DSS VGS = 0V, ID = 1mA 30 - - V

Breakdown voltagetemperature coefficient

　ΔV(BR)DSS　 ID = 1mA- 21 - mV/℃

　　ΔTj 　　 referenced to 25℃

Zero gate voltagedrain current IDSS VDS = 30V, VGS = 0V - - 1 μA

Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA

Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 1.0 - 2.5 V

Gate threshold voltagetemperature coefficient

　ΔVGS(th) 　 ID = 1mA- -3 - mV/℃

　　ΔTj 　　 referenced to 25℃

Static drain - sourceon - state resistance RDS(on)

*3 VGS = 10V, ID = 7A - 20 27

mΩ VGS = 4.5V, ID = 7A - 29 39

Gate input resistance RG 　 - 3.3 - Ω

Transconductance gfs*3 VDS = 5V, ID = 7A 4 - - S

*1 Pw≦10μs , Duty cycle≦1%

*2 Mounted on a ceramic boad (30×30×0.8mm)

*3 Pulsed

llElectrical characteristics (Ta = 25°C)

UnitMin. Typ. Max.

Input capacitance Ciss VGS = 0V - 410 -

pFOutput capacitance Coss VDS = 15V - 50 -

Reverse transfer capacitance Crss f = 1MHz - 40 -

Turn - on delay time td(on)*3 VDD ⋍ 15V,VGS = 10V - 6 -

nsRise time tr*3 ID = 3.5A - 8 -

Turn - off delay time td(off)*3 RL = 4.29Ω - 23 -

Fall time tf*3 RG = 10Ω - 5 -

llGate charge characteristics (Ta = 25°C)

UnitMin. Typ. Max.

Total gate charge Qg*3

VDD ⋍ 15V ID = 7A

VGS = 10V - 8.9 -

nC VGS = 4.5V

- 4.6 -

Gate - Source charge Qgs*3 - 1.9 -

Gate - Drain charge Qgd*3 - 1.4 -

llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

UnitMin. Typ. Max.

Body diode continuousforward current IS

Ta = 25℃- - 1.67

ABody diode pulse current ISP

*1 - - 28

Forward voltage VSD*3 VGS = 0V, IS = 1.67A - - 1.2 V

llElectrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Fig.3 Normalized Transient Thermal 　　　　　　　　Resistance vs. Pulse Width

Fig.4 Single Pulse Maximum Power 　　　　　　　　dissipation

Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)

Fig.7 Breakdown Voltage vs. Junction　Temperature

Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction　Temperature

Fig.10 Tranceconductance 　vs. DrainCurrent

Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State　Resistance vs. Gate Source Voltage

Fig.13 Static Drain - Source On - State　Resistance vs. Junction Temperature

Fig.14 Static Drain - Source On - State　Resistance vs. Drain Current(I)

Fig.15 Static Drain - Source On - State　Resistance vs. Drain Current(II)

Fig.16 Static Drain - Source On - State　Resistance vs. Drain Current(III)

Fig.17 Typical Capacitance vs. Drain -　Source Voltage

Fig.18 Switching Characteristics

Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain　Voltage

llMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

llNotice

This product might cause chip aging and breakdown under the large electrified environment.Please consider to design ESD protection circuit.

RQ3E070BN 　　　　　　　　　　　　　　　　　　　 Datasheet

llDimensions

Mouser Electronics

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RQ3E070BN : Transistors · RQ3E070BN Datasheet lMeasurement circuits Fig.1-1 Switching Time...

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