Post on 23-Dec-2015
RFMD® Foundry Services
RFMD Foundry Services
World’s Largest III-V Electronics Manufacturer
Two high volume Fabs for unlimited capacity
Starts >25% of the world’s GaAs wafers
Industry-leading cycle time
Foundry Services from the Leader
20 Years of Leadership in III-V Manufacturing
World-Class Technologies
GaAs
GaN
MBE
UHV Parts Cleaning
Experienced Support Teams
Process and Device Engineering
Quality
Supply Chain
CAD
•RFMD qualifies GaN1 high power process technology for 65V operation
•Two additional GaAs pHEMT process technologies are now available
• Low noise GaAs pHEMT
• Switch GaAs pHEMT
Foundry Services Latest News
Equipped to Support Customer Needs
GaAs HBT GaAs pHEMT
RFMD Greensboro, USA
RFMD Newton-Aycliffe, UK
GaAs HBT GaAs pHEMT GaN MBE UHV Parts Cleaning
Industry-Leading Cycle Time from RFMD
RFMD PrototypeRFMD Production
Foundry BFoundry C
Foundry D
Cycle Times – Industry Averages
Cycle Times (wks) 0 2 4 6 8 10 12 14
Foundry Services
*Time from receipt of DRC clean layout file to delivery of standard processed wafers/die
•RFMD’s best-in-class cycle time is backed by our on-time pledge
•Prototype and shuttle lot cycle time = 6 weeks*
•Production lot cycle time = 6 weeks*
The Best Technology Available
Same process technologies used for RFMD products
Robust technology roadmap for GaN and GaAs New process technologies available immediately
upon production release
Technologies to support long product lifetimes
Available Foundry Technology
GaN
GaN1 = High Power GaN2 = High Linearity
GaAs FD30 = Power GaAs pHEMT FD25 = Low noise GaAs pHEMT FET-1H = Switch GaAs pHEMT IPC3 = High Power Integrated
Passive Components
MBE GaAs InGaAs AlGaAs InGaP AlInP
UHV Parts Cleaning Standard and custom services
RFMD GaN Process Technologies
High Power
GaN1
Key Attributes• 36V – 65V operation• High power density• High peak efficiency• High breakdown voltage (400V)
• Technology developed and manufactured in the US
High Linearity
GaN2
Key Attributes• 15V – 48V operation• High linearity (6dB improvement)• Low Cgs variation• Low threshold voltage• Technology developed and
manufactured in the US
High Power with Optimized Linearity
GaN3
Key Attributes• 36V – 65V operation• Improved linearity• Reduced IDQ drift
• High peak efficiency• Currently in development
Target Applications• Military (EW, radar, milcom)• Civilian (ATC, radar, cellular
infrastructure)
Target Applications• Broadband handheld radios (PMR)• CATV• ISM
Target Markets• Cellular infrastructure• Public mobile radio• Next generation military radio
Reliability• EA = 2.1eV
• MTTF = 1.1x107 Hrs @ TCHANNEL= 200
oC
Reliability• EA = 2.1eV
• MTTF = 1.8x107 Hrs @ TCHANNEL= 200
oC
Reliability• EA = 1.5eV
• MTTF > 107 Hrs @ TCHANNEL = 200
oC
18 19 20 21 22 23 24 25 26 27 2810
0
102
104
106
108
1010
1/kT
MT
TF
350 325 300 275 250 225 200 175 150
Arrhenius plot of lifetest failure dataTch (C)
18 19 20 21 22 23 24 25 26 27 2810
0
102
104
106
108
1010
1/kT
MT
TF
350 325 300 275 250 225 200 175 150
Arrhenius plot of lifetest failure dataTch (C)
RFMD GaN1High Power
RFMD GaN2High Linearity
Reliability Test Results
Sample Size
GaN1High Power
GaN2High Linearity
Total Devices 293 220
Wafers 18 10
Fab Lots 6 4
Epi Vendors 1 1
Number of Temperatures
6 5
Results
GaN1High Power
GaN2High Linearity
MTTF 1.1E7 1.8E7 Hrs
Ea 2.1 2.1 eV
TCHANNEL 200 200 ºC
VDS 48 48 V
GaN High Temperature Reliability Test
Reliability Test Results
Sample size
GaN1High Power
Total Devices 188
Wafers 14
Fab Lots 5
Epi Vendors 1
Number of Temperatures
5
Results
GaN1High Power
MTTF 7E7 Hrs
Ea 2.4 eV
TCHANNEL 200 ºC
VDS 65 V
GaN New 65V Qualification
18 20 22 24 26 2810
0
102
104
106
108
1010
1/kT
MT
TF
350 325 300 275 250 225 200 175 150Tch (C)
RFMD GaN1High Power
RFMD GaAs Process Technologies
Low Noise pHEMT
FD25
Key Attributes• 7V operation• fT= 50GHz
• NFMIN < 0.8dB @ 10GHz
• Technology developed and manufactured in UK
Power pHEMT
FD30
Key Attributes• 10 V operation• fT= 30GHz
• High power, efficiency• Technology developed and
manufactured in UK
Switch pHEMT
FET1H
Key Attributes• 7V operation• High linearity switch• Low noise• Technology developed in US;
manufactured in US and UK
Target Applications• Military (phased arrays, T/R module)• Wireless front ends• MMICs
Target Applications• Military (phased arrays, EW)• Infrastructure
Target Markets• Wireless front ends• Transmit/receive • Phased arrays
Reliability• EA = 1.4 eV
• MTTF=5.6 x 106 Hrs
Reliability• EA = 1.7 eV
• MTTF=4.4 x 106 Hrs @150°
Reliability• EA = 2.4eV
• MTTF=1.3 x 1011 Hrs @ 150°
Reliability Test Results
Results
FD25 Low Noise pHEMT
FD30Power pHEMT
Number of Temperatures
3 3
MTTF 5.6E6 4.4E6 Hrs
Ea 1.4 1.7 eV
TCHANNEL 150 150 ºC
VDS 8 10 V
IDS 130 140 mA
275250225200175150
10000000
1000000
100000
10000
1000
100
Temp_FD25 TXYZ
Tim
e t
o F
ail_
FD25 T
XYZ
60Percentiles
Relation Plot (Fitted Arrhenius) for Time to Fail_FD25 TXYZ
Complete Data - ML EstimatesLognormal - 60% CI
Arrhenius plots 10%
y = 20208x - 32.467
0
2
4
6
8
10
12
14
16
18
20
311 280 250 225 200 180 160 142 1251/T(K)
Ln
TT
F
RFMD FD25Low Noise pHEMT
RFMD FD30Power pHEMT
GaAs High Temperature Reliability Test
MBE Foundry Services
RFMD foundry services offers multiple MolecularBeam Epitaxy (MBE) platforms, Epi characterization, and experienced staffing to help develop your epitaxial structures.
Specialty and high-volume, arsenic and phosphorus-based processes
Accessible staff to design an epilayer structure and MBE process
Optimize the performance of your existing epistructure
MBE Foundry Services
Gallium arsenide (GaAs)
Aluminum gallium arsenide (AlGaAs)
Indium gallium phosphide (InGaP)
Aluminum indium phosphide (AlInP)
MBE Foundry Services
Indium gallium arsenide (InGaAs)
Material Offerings on GaAs Substrates
Available MBE systems include
Veecco Gen2K (7 x 6")
Riber R7000 (7 x 6")
Riber R6000 (4 x 6”) – VG100 (1x6”)
Growth Capabilities
Low-temperature growth capability
• In-situ monitoring for temperature, layer thickness, and growth rate control
• Extensive characterization including Lehighton, Surfscan, Xray, Multifield Hall, Photoluminescence, and AFM
• Flexible accommodation: 4" and 6" wafer sizes are standard
MBE Foundry Services
RFMD foundry services offers an extensive range of capabilities allowing for custom-designed procedures to meet your cleaning needs.
UHV Parts Cleaning Services
Before After
UHV Parts Cleaning Services
Before
Before
After
After
RFMD foundry services offers an extensive rangeof capabilities allowing for custom-designed proceduresto meet your cleaning needs.
Wet cleaning capabilities
Types of parts cleaned: stainless steel, refractory metal and PBN ceramic parts
Standard and custom-cleaning procedures available
UHV Parts Cleaning Services
Tool kit for circuit design and layout ADS and AWR process design kits
Comprehensive design rules and technology documentation
How-to user guides
Tracking information WIP tracking
PCM data
Individual customer collaboration sites for convenient data exchange
Secured Customer Website
World-Class Customer Service
Guaranteed cycle time
On-Time Shipment Pledge
Foundry services team Technology
CAD
Business
Customer service support
Dedicated RFMD Teamis Working for You
VOLUME MANUFACTURER with FLEXIBLE SCALE
Foundry Services from the Leader
To learn more about RFMD Foundry Services, visit us at
www.RFMD.com/Foundry