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Neamen Microelectronics, 4eChapter 5-1
McGraw-Hill
Microelectronics Circuit Analysis and Design
Donald A. Neamen
Chapter 5
The Bipolar Junction Transistor
Neamen Microelectronics, 4eChapter 5-2
McGraw-Hill
In this chapter, we will: Discuss the physical structure and operation of
the bipolar junction transistor. Understand the dc analysis and design
techniques of bipolar transistor circuits. Examine three basic applications of bipolar
transistor circuits. Investigate various dc biasing schemes of bipolar
transistor circuits, including integrated circuit biasing.
Consider the dc biasing of multistage or multi-transistor circuits.
Neamen Microelectronics, 4eChapter 5-3
McGraw-Hill
Cross Section of Integrated Circuit npn Transistor
Neamen Microelectronics, 4eChapter 5-4
McGraw-Hill
Modes of Operation Forward-Active
B-E junction is forward biasedB-C junction is reverse biased
SaturationB-E and B-C junctions are forward biased
Cut-OffB-E and B-C junctions are reverse biased
Inverse-Active (or Reverse-Active)B-E junction is reverse biasedB-C junction is forward biased
Neamen Microelectronics, 4eChapter 5-5
McGraw-Hill
npn BJT in Forward-Active
Neamen Microelectronics, 4eChapter 5-6
McGraw-Hill
Electrons and Holes in npn BJT
Neamen Microelectronics, 4eChapter 5-7
McGraw-Hill
Electrons and Holes in pnp BJT
Neamen Microelectronics, 4eChapter 5-8
McGraw-Hill
Circuit Symbols and Current Conventions
Neamen Microelectronics, 4eChapter 5-9
McGraw-Hill
Current Relationships
1
)1(
EC
BE
BC
BCE
iiii
iiiii
Neamen Microelectronics, 4eChapter 5-10
McGraw-Hill
Common-Emitter Configurations
Neamen Microelectronics, 4eChapter 5-11
McGraw-Hill
Common-Base Configuration
Neamen Microelectronics, 4eChapter 5-12
McGraw-Hill
Current-Voltage Characteristics of a Common-Base Circuit
Neamen Microelectronics, 4eChapter 5-13
McGraw-Hill
Current-Voltage Characteristics of a Common-Emitter Circuit
Neamen Microelectronics, 4eChapter 5-14
McGraw-Hill
Early Voltage/Finite Output Resistance
Neamen Microelectronics, 4eChapter 5-15
McGraw-Hill
Effects of Leakage Currents on I-V Characteristics
Neamen Microelectronics, 4eChapter 5-16
McGraw-Hill
Effect of Collector-Base Breakdown on Common Base I-V Characteristics
Neamen Microelectronics, 4eChapter 5-17
McGraw-Hill
Effect of Collector-Base Breakdown on Common Emitter I-V Characteristics
Neamen Microelectronics, 4eChapter 5-18
McGraw-Hill
DC Equivalent Circuit for npn Common Emitter
Neamen Microelectronics, 4eChapter 5-19
McGraw-Hill
DC Equivalent Circuit for pnp Common Emitter
Neamen Microelectronics, 4eChapter 5-20
McGraw-Hill
Load Line
Neamen Microelectronics, 4eChapter 5-21
McGraw-Hill
Problem-Solving Technique:Bipolar DC Analysis
1. Assume that the transistor is biased in forward active modea. VBE = VBE(on), IB > 0, & IC = IB
2. Analyze ‘linear’ circuit.3. Evaluate the resulting state of transistor.
a. If VCE > VCE(sat), assumption is correctb. If IB < 0, transistor likely in cutoffc. If VCE < 0, transistor likely in saturation
4. If initial assumption is incorrect, make new assumption and return to Step 2.
Neamen Microelectronics, 4eChapter 5-22
McGraw-Hill
Voltage Transfer Characteristic for npn Circuit
Neamen Microelectronics, 4eChapter 5-23
McGraw-Hill
Voltage Transfer Characteristic for pnp Circuit
Neamen Microelectronics, 4eChapter 5-24
McGraw-Hill
Digital Logic
Inverter NOR gate
Neamen Microelectronics, 4eChapter 5-25
McGraw-Hill
Bipolar Inverter as Amplifier
Neamen Microelectronics, 4eChapter 5-26
McGraw-Hill
Effect of Improper Biasing on Amplified Signal Waveform
Neamen Microelectronics, 4eChapter 5-27
McGraw-Hill
Single Base Resistor Biasing
Neamen Microelectronics, 4eChapter 5-28
McGraw-Hill
Common Emitter with Voltage Divider Biasing and Emitter Resistor
CCTH VRRRV )/([ 212
Neamen Microelectronics, 4eChapter 5-29
McGraw-Hill
Integrated Circuit Biasing
21
1
III QC
Neamen Microelectronics, 4eChapter 5-30
McGraw-Hill
Multistage Cascade Transistor Circuit
Neamen Microelectronics, 4eChapter 5-31
McGraw-Hill
Multistage Cascode Transistor Circuit