Ion implanter – HV terminal 500 kVa number of Nielsen and RF ion sources for gaseous and solid materialsmass analysis better than 1 a.m.u.beam current from 1-100 A, beam scanning systemtarget area up to 5 cm diameter

2MV Van de Graaff ion acceleratorRF source for light ions - H, He and their isotopesRBS – beam line in preparation

UHV chamber for thin film depositione-beam or thermal evaporation

Dual ion miller for TEM specimen preparation

Thin film coating unitfor SEM sample preparation

TEM – Philips EM400

120 keV

TEM – Philips EM400T

120 keV

SEM – Philips EM500

Oxford Instruments EDAX

SEM – JEOL 25N with EPMA (e-microprobe)

ANA

HV thin film deposition unit

with dual ion beams

EMA 10 – UHV system

Surface analysis - LEIS i SIMS

(low energy ion

scattering and

Secondary ion

mass spectroscopy)

Balzers SPUTTRON II thin film deposition system

d.c. and r.f. sputtering, four target elements, raective deposition

Balzers BAK 550 evaporation system

e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor, programmable four layer deposition, reactive evaporation, residual gas analyzer, flash evaporation

Talistep – thin film thickness and surface roughness measurements