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Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. 1
Introduction to MRAM and its Applications
TMFreescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. 2
Non-volatile memory with unlimited read-write endurance
Non-destructive read/write Symmetrical 35ns Read/Write access time Bitwise erasable (28 Mb/s) Data Retention >10 Years 256Kx16bit organization 3.3V single power supply Fast SRAM compatible pinout (center power and
ground) Commercial Temperature (0-70°C) RoHS Compliant TSOP type-II package Flexible Data Bus (8/16-bit access) LVI prevents writes on power loss I/O TTL compatible Fully static operation
Industry First - Freescale’s 4Mb MRAM
MR2A16A
General Specification
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MRAM Advantages
Data Retention - > 10 years
Stable & Reliable - Data stored by polarization not charge
Symmetrical Read/WriteByte writeable – bit level granularity
35ns for 4Mb at 0.18um technology node
Unlimited Endurance - 1016
Non-destructive read – no wearout, no leakage, no soft errors
• Integrated with Existing CMOS Baseline• Compatible with Embedded Designs
• Highly Reliable
Nonvolatile
Fast
Unlimited Cycles
Viable
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MRAM Endurance Cycling
0%
100%
1 100 10000 1000000 1E+08 1E+10 1E+12 1E+14
Number of Read/Write Cycles
Pas
sin
g %
Reliability Leadership
Endurance cycling has reached 58 trillion cycles with no change in critical parameters.
Data from >2800 bits from 900 devices 8 orders of magnitude more cycles than current Flash technologyNo known failure modes are seen or expected.
Flash Capability
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MRAM Product Roadmap
2006 2007
1Mb,35nS48-pin TSSOP
0-70C
Available Now
Coming Soon
Proposed
8/16M,35Ns119PBGA-40-105C
MR2A16A4Mb,35nS
44-pin TSOP0-70C
MR2A16A4Mb,35nS
44-pin TSOP-40-105C
1Mb-40-105C
16Mb
8Mb
4Mb
1Mb512Kb/256Kb
1/4Mb0-70CBGA
July 2007
2008+
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MRAM Basics
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Information is stored as magnetic polarization, not charge
The state of the bit is detected as a change in resistance
How MRAM Works
Magnetic layer 1 (free layer)
Magnetic layer 2 (fixed layer)
Tunnel barrier
Magnetic vectors are parallel – low resistance. “0”
Magnetic vectors are anti-parallel – high resistance. “1”
S
S N
N N
S N
S
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1 T-1 MTJ MRAM memory cell operation - read
Isolation Transistor“ON”
Read Mode
ISense
To read an MRAM bit, current is passed through the bit and the resistance of the bit is sensed.
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1 T-1 MTJ MRAM memory cell operation - write
Free LayerTunnel Barrier
Fixed Layer
Easy Axis Field
Hard Axis Field
Isolation Transistor“OFF”
“Write Mode”
IEasy
IHard
To write an MRAM bit, current is passed through the programming lines generating magnetic fields.
The sum of the magnetic field from both lines is needed to program the bit.
No moving parts.
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4Mb Memory Cell
M5-BLVia1-4M1-3
N+P-
Layer Name
N+ N+
M4-DL MVia BE TVia TETJ
N+ N+N+ N+
M1
M3
M2
M4-DL
V1
V2
V3
V4MVia
BE
TETJ TVia
M5-BL
Group SelectPass Xtor Pass XtorThk Oxide Xtor
i
i
Program path for Writing information
Sense Path for bit cell reading
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Freescale……. Technology Leadership
MRAM BEOL
CMOS FEOL
Contact
Via 1
Metal 2
Metal 1
Via 2
Metal 4
Bit cell
Via 3
Metal 5
Metal 3MTJ
Metal 4
Metal 5
MRAM module
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MRAM – Functional Operation
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Toggle Bit Technology
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Bit Line
DL Program Line
BL Program Line
Free Tri-Layer
Tunnel Barrier
Pinning Layer
Bit Line
Program Line 1
Program Line 2
Free Tri-Layer
Tunnel Barrier
Pinned Ferromagnetic
Pinning Layer
Ferromagnetic layerCoupling LayerFerromagnetic layer
Toggle MRAM Bit Cell
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H=0H=0
Conventional Free Layer
Tri-Layer Coupled Free Layer
H=0
Free Layer Field Response
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Elements of Toggle Bit
Balanced SAF free-layerBit oriented 45º to linesUnipolar currentsOverlapping pulse sequencePre-read / decision write Write
Line 1(H1)
WriteLine 2(H2)
HardAxis
EasyAxis
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HardAxisHardAxisHardAxis
EasyAxisEasyAxisEasyAxis
Write Line 2
Write Line 1
HardAxisHardAxisHardAxis
EasyAxisEasyAxisEasyAxis
Write Line 2
Write Line 1
HardAxisHardAxisHardAxis
EasyAxisEasyAxisEasyAxis
Write Line 2
HardAxisHardAxisHardAxis
EasyAxisEasyAxisEasyAxis
Write Line 2
HardAxisHardAxisHardAxis
EasyAxisEasyAxisEasyAxis
Write Line 2
Write Line 1
Write Line 1
Write Line 2
t0 t1 t2 t3 t4
Off
On
Off
On
H 1
I 1
H 2
I 2
H 1
I 1
H 2
I 2
Write Line 1
Write Line 1
Toggle MRAM Switching Sequence
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Competition, Applications & Product Timeline
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Initial Competitive Markets for MRAM
Competition is limited to those memory technologies that have the same attributes of MRAM:
• Non-volatility• High Read/Write Performance • High Read/Write Endurance
SRAM – Not non-volatileDRAM – Not non-volatileFlash – Low write performance, poor enduranceFeRAM – Limited performance, limited enduranceBBSRAM – Functionally compatible
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MR2A16ATS35C Key Features
►Key Features• High performance – symmetrical read and write timing• Small size and scalable for future technologies• Nonvolatile with virtually unlimited read-write endurance• Low leakage and low voltage capable
MRAM SRAM DRAM Flash FeRam
Read Speed Fast Fastest Medium Fast Fast
Write Speed Fast Fastest Medium Low Medium
Array Efficiency Med/High High High Med/Low Medium
Future Scalability Good Good Limited Limited Limited
Cell Density Med/High Low High Medium Medium
Non-Volatility Yes No No Yes Yes
Endurance Infinite Infinite Infinite Limited Limited
Cell Leakage Low Low/High High Low Low
Low Voltage Yes Yes Limited Limited Limited
Complexity Medium Low Medium Medium Medium
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Competitive Devices
Supplier TechnologyPart Number Density Speed
Freescale MRAM MR2A16ATS35C 4Mb 35ns
Ramtron FRAM FM20L08-60-TGC 1Mb 350ns
STM BBSRAM M48Z512AY-70PM1 4Mb 70nsBBSRAM M48Z512AY-70PM1 4Mb 70nsBBSRAM 497-2886-5-ND 4Mb 70nsBBSRAM 497-2886-5-ND 4Mb 70ns
Maxim (Dallas) BBSRAM DS1250AB-100+ 4Mb 100nsBBSRAM DS1250AB-100+ 4Mb 100nsBBSRAM DS1250AB-70+ 4Mb 70nsBBSRAM DS1250AB-70+ 4Mb 70ns
SimTek nvSRAM STK17TA8-R35I (Industrial) 1Mb 35nsnvSRAM STK17TA8-RF25 (Commercial) 1Mb 25nsnvSRAM STK17TA8-RF35 (Commercial) 1Mb 35nsnvSRAM STK17TA8-RF45 (Commercial) 1Mb 45nsnvSRAM STK17TA8-RF45I (Industrial) 1Mb 45ns
Texas Instr BBSRAM BQ4013Y (Commercial) 1Mb 70nsBBSRAM BQ4013YMA (Commercial) 1Mb 120ns
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MR2A16ATS35C Competitive Analysis
Supplier TechnologyPart Number Density Config Speed Read Current Temperature Qty Price
Freescale MRAM MR2A16A 4Mb 256Kbx16 35ns 55 mA 0 to 70C 1000 22.50$
Ramtron FRAM FM20L08-60-TGC 1Mb 128Kbx8 350ns 22 mA -40C to 85C small 17.83$
STM BBSRAM M48Z512AY-70PM1 4Mb 512Kx8 70ns 115 mA 0 to 70C small 70.00$ BBSRAM 497-2886-5-ND 4Mb 512Kx8 70ns 115 mA 0 to 70C 5000 42.00$
Maxim (Dallas)BBSRAM DS1250AB-100+ 4Mb 512Kx8 100ns 85 mA -40C to 85C 100 52.34$ BBSRAM DS1250AB-100+ 4Mb 512Kx8 100ns 85 mA -40C to 85C 1000 48.15$ BBSRAM DS1250AB-70+ 4Mb 512Kx8 70ns 85 mA -40C to 85C 100 52.85$ BBSRAM DS1250AB-70+ 4Mb 512Kx8 70ns 85 mA -40C to 85C 1000 48.63$
SimTek nvSRAM STK14CA8-RF25I 1Mb 128Kbx8 25ns 70 mA -40C to 85C small $24.72nvSRAM STK14CA8-RF45I 1Mb 128Kbx8 45ns 55 mA -40C to 85C small $20.64nvSRAM STK14CA8-RF45 1Mb 128Kbx8 45ns 55 mA 0C to 70C small $17.19
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MCU
SRAM
BatteryControl Chip
CE
Problems• System design complexity• Board space and weight• Battery life• Manufacturing complexity• Environmental concerns MRAM
Solutions• Single chip solution• Simple, low cost system design• Manufacturing simplification• No battery• Unlimited life• Smaller profile • Higher performance• Environmentally friendly
“Built-in-house” Components
MCUSRAM
Battery
Problems• Cost• Manufacturing complexity• Battery life• Low performance• Environmental concerns
“Off-the-shelf” components
Addr/Data Bus
Sample Application – Battery Backed SRAM Replacement
Addr/Data Bus
Addr/Data Bus MCU
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Target Application – Battery Backed SRAM Replacement
Primary Usage• Data Logging• Parameter Storage• System Status• Storage Buffers
• Battery Contact Failure
• Out-of-Tolerance Voltage Spikes
• Limited Life
Manufacturing Complexity
More Parts & Labor & Board Space & Weight
System Design Complexity
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Standalone Market Example: RAID Storage
The Application• Redundant array of inexpensive disks (RAID 0-7 & Hybrids)• RAID systems are found in imaging, video, audio, web sites, emerging multimedia programs,
transaction processing systems, mission critical backup solutions for hospitals, police, banking and insurance firms have ever increasing needs for high transfer rates and storage capacity.
MRAM Improves Performance• Non volatile memory increases security & integrity
of data• Failsafe RAID cache• High data availability without BBSRAM (Battery-
Backed Static RAM) difficulties
Critical Cache
Configuration Data
RAID Journal
RAID Controller
Chip
DiskArrays
RAID Controller
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MR2A16ATS35C Application Spaces►Target Application Spaces
• Data Streaming RAID systems and servers POS terminals Data-acquisition systems Data logging Buffers Routers / switches Printers / copiers
• System Configuration Black-box applications Gaming System status ►Currently not targeting high density, space-
constrained applications• Portable digital audio players• Jump drives• Digital camera data storage
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Embedded MRAM Example: System on a Chip
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MRAM Compared to Flash
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Sample and Production Timing
Current planning:
Now – 4Mb Qualification Samples. 0 – 70C, 35ns
Now – 4Mb Production. 0 – 70C, 35ns
1Q07 – 4Mb Qualification Samples. -40C – 105C
2Q07 – 4Mb Production Volumes. -40C – 105C
2007 – Derivative Products (to be announced)
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Summary
Industry’s first high performance, reliable non volatile memory technology.
4Mb part is available now for applications like configuration storage, data logging, cache buffer, etc.
Industrial temperature part (-40C to 105C) will be available by mid-2007.
Various standalone parts will be available from Freescale.
Embedded designs are being defined.