Post on 09-Feb-2018
Power Matters.
GaN Power Transistors in Avionics and Radar Market
© 2013 Microsemi Corporation. CONFIDENTIAL
MTTS – Seattle 2013 Jerry W. Chang Director, Transistor Solutions
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• GaN Technology Advantages
• GaN Transistors - Avionics and Radar
• Microsemi GaN Product Offering
• GaN Vertical Integration
Microsemi - Agenda
• Summary
©2013 Microsemi • Proprietary & Confidential
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Material Property Si SiC GaN
Band Gap (eV) 3 Times Silicon
1.1 3.2 3.5
Critical Field (106 V/cm) Ten Times Silicon
0.3 3 3.3
Thermal Conductivity (Watt/cm2-K) 3 Times Silicon
1.5 4.9 >1.5
High operating temperature. High voltage operation, higher power output and wider bandwidth. Higher Power Per part
GaN on SiC - higher power, higher frequency, longer pulses and duty cycle capabilities than Silicon:
Capability System Benefit
• Increase reliability • High operating temperature • Extend system range with
High power wide band amplifiers
• Reduce part size / eliminate cooling requirements
3X
10X
3X
GaN Material Property Advantages
©2013 Microsemi • Proprietary & Confidential
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S-Band 2.7 – 2.9GHz,12 dB Gain, 500W Module
Output TR x4
Driver x1
Before Now
• One GaN replaces Five Si BJT transistors
©2013 Microsemi • Proprietary & Confidential
GaN Power 2729GN-500
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Before Now
S-Band 2.7 – 2.9GHz,12 dB Gain, 500W Module
©2013 Microsemi • Proprietary & Confidential
+
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S-Band Power of Excellence!
W
1000
900
800
700
600
500
400
300
200
100
Si-170
Si-300P GaN-300 GaN-400
GaN-500
GaN-1000P
©2013 Microsemi • Proprietary & Confidential
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Microsemi GaN Power Transistors Leadership!
W 1000 700 600 500 400 300 200 100 10
Radar Avionics L-Band
1.2 - 1.4 GHz S-Band
2.7 – 2.9 GHz IFF ELM
1030/1090 MHz TACAN
960 /1215 MHz
MDSGN-750ELMV
MDS TCAS 1030/1090 MHz
MDS1400
2729-170M
1214-370V
MDS500L
TAN350
0912GN-650V
2729GN-500V 1214GN-550V
1214GN-280V 2729GN-270V 0912GN-300V
1214GN-20V
1011GN-1400V
©2013 Microsemi • Proprietary & Confidential
2731GN-20V 0912GN-20V
0912GN-100LV 1214GN-100LV 2731GN-100LV
1011GN-1000V
+50V GaN Complete Lineups
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• Avionics IFF 1011GN-700ELM
• Radar – S-Band 2729GN-500V
• Radar – L-Band 1214GN-550V
Feature GaN Power Transistors
©2013 Microsemi • Proprietary & Confidential
• Avionics Data Link 0912GN-650V
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Avionics – 1011GN-700ELM
Company Confidential
Mode-S ELM - 32us (on) / 18 us (off), x 48, Period=24 ms
MDS500L – Si BJT
1011GN-700ELM – GaN
©2013 Microsemi • Proprietary & Confidential
• For Avionics Mode-S ELM • High Power >700W • High Gain > 21 dB • Excellent Efficiency > 70% • Class AB Bias • Fast Rise Time 20nS
Freq (MHz)
Pin (W)
Pout (W)
Gp (dB) Effi (%)
1030 60 525 9.4 57
Freq (MHz)
Pin (W)
Pout (W)
Gp (dB) Effi (%)
1030 5 720 21 72
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1011GN-700ELM: Excellent Temperature Stability
Company Confidential
Less Than 1dB Gain and Power Varition from -55o to +85o C
1011GN-700ELM – Temperature Plot
©2013 Microsemi • Proprietary & Confidential
• For Avionics Mode-S ELM • High Power >700W • High Gain > 21 dB • Excellent Efficiency > 70%
Temp (oC)
Pin (W) Pout (W) Gp (dB) Delta Gain
-55 5 621 20.9 -0.7
+25 5 720 21.6 0
+85 5 621 20.9 -0.7
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IFF 4kW Power Amplifier Application
©2013 Microsemi • Proprietary & Confidential
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Avionics – 0912GN-650V
Company Confidential
Broadband 960 -1215MHz, 128us, 10%
©2013 Microsemi • Proprietary & Confidential
• 960 – 1215 MHz • Broadband Data Link • One Circuit Full Band • High Output Power >650W • High Gain > 17.5 dB • Excellent Flatness • Class AB Operation • Fast Rise Time 20nS
Freq (MHz)
Pin (W) Pout (W) Gp (dB) Effi (%)
960 11.2 684 17.9 53
1090 11.2 684 17.9 58
1215 11.2 721 18.1 63
0912GN-650V
0912GN-50V
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L-Band Radar – 1214GN – 550V
Company Confidential
1200 – 1400MHz, 300us, 10%
©2013 Microsemi • Proprietary & Confidential
• 1.2 – 1.4 GHz • High Output Power >550W • High Gain > 17 dB • Excellent Efficiency > 50% • Excellent Flatness • Class AB Operation • Fast Rise Time 20nS
Freq (GHz)
Pin (W) Pout (W) Gp (dB) Effi (%)
1.2 12 610 17.1 53
1.3 12 660 17.4 59
1.4 12 608 17.0 61
17 dB 1214GN-550V
2000W
17 dB 1214GN-60V
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S-Band ATC Radar – 2729GN-500V
Company Confidential
2700 – 2900MHz, 100us, 10%
©2012 Microsemi • Proprietary & Confidential
• 2.7 – 2.9 GHz • ATC Radar • High Power > 500W • High Gain > 11.5 dB • Excellent Efficiency > 50% • Class AB Operation • Fast Rise Time 20nS
Freq (GHz)
Pin (W) Pout (W) Gp (dB) Effi (%)
2.7 35.5 562 12.0 50
2.8 35.5 537 11.8 50
2.9 35.5 575 12.1 57
12 dB 2729GN-500V
13 dB 2731GN-220V
13 dB 2731GN-20V
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+50V Standard GaN Power Transistors
©2013 Microsemi • Proprietary & Confidential
Model Number Freq (MHz) Pout (W)Gain (dB)
TypEfficiency
TypPulse
Width (us)Duty
Cycle (%) Vdd (V) Case
1011GN-1000V* 1030 1000 17.5 53 10 1 50 55KR
MDS-GN-750ELMV 1030/1090 750 17.2 63 ELM 6.4 50 55KR
DME-GN-700V 1025-1150 700 17.4 58 20 6 50 55KR
0912GN-20V 960-1215 20 17 55 128 10 50 55KR
0912GN-100LV 960-1215 100 16 50 3000 30 50 55KR
0912GN-300V 960-1215 300 16.8 55 128 10 50 55KR
0912GN-650V 960-1215 650 17.6 58 128 10 50 55KR
1214GN-20V 1200-1400 20 17 50 300 10 50 55KR
1214GN-100LV 1200-1400 100 16 50 3000 30 50 55KR
1214GN-180LV 1200-1400 180 16.6 52 3000 30 50 55KR
1214GN-280LV 1200-1400 280 16.7 60 200 20 50 55KR
124GN-550V 1200-1400 550 16.6 55 300 10 50 55KR
2729GN-150V 2700-2900 150 11.76 50 100 10 50 55QP
2729GN-270V 2700-2900 270 12.7 50 100 10 50 55QP
2729GN-500V 2700-2900 500 11.4 46 100 10 50 55KR
2731GN-20V 2700-3100 20 16 46 200 10 50 55QP
2731GN-100LV 2700-3100 100 11 50 3000 30 50 55QP
2731GN-110V 2700-3100 110 11.4 50 200 10 50 55QP
2731GN-220V 2700-3100 220 11.4 50 200 10 50 55QP
2731GN-450V 2700-3100 450 11 46 200 10 50 55KR
3135GN-20V 3100-3500 20 13 45 300 10 50 55QP
3135GN-110V 3100-3500 110 10.87 42 300 10 50 55QP
3135GN-200V 3100-3500 200 11 40 300 10 50 55QP
3135GN-400V 3100-3500 400 10.5 42 300 10 50 55KR
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GaN >1000W Pallet Model 2729GN-1000
Vdd = 65V, Idq = 2A_pk, 100us 5%
0
200
400
600
800
1000
1200
10 20 30 40 50 60 70
Pin (W)
Po
ut
(W)
10
12
14
16
18
20
22
Gai
n (
dB
)2.7 GHz
2.8 GHz
2.9 GHz
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GaN Products – Vertical Integration
Transistor
GaN Pallet
GaN Module
High Power Amp
©2013 Microsemi • Proprietary & Confidential
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Summary
Microsemi GaN Power Transistors Leadership Complete +50V Lineups L-Band Radar – 550W S-Band Radar – 500W Avionics – Mode-S ELM 750W Avionics – TCAS 1000W
GaN Technology Advantages
Higher Power Higher Gain Better Efficiency Smaller Size Broader Band
GaN Transistor Demo Unit Available
Contact Information – GaN@Microsemi.com
©2013 Microsemi • Proprietary & Confidential
GaN Product Vertical Integration
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POWERING A SMART SECURE CONNECTED WORLD
Thank You – Questions?