Post on 28-May-2020
非平面型元件統合式服務平台
8” Bulk FinFET Process
CONFIDENTIAL 1
FOX
Gate
Si
2014/06/04
DisclaimerNDL SHALL NOT BE LIABLE FOR TECHNICAL OR EDITORIAL
ERRORS OR OMISSIONS CONTAINED HEREIN; NOR FORINCIDENTAL OR CONSEQUENTIAL DAMAGES RESULTING FROMTHE FURNISHING, PERFORMANCE, OR USE OF THIS MATERIAL.THE INFORMATION IN THIS MANUAL IS SUBJECT TO CHANGEWITHOUT ANY PRIOR NOTICE FOR THE PURPOSES OF IMPROVINGTHE PERFORMANCE AND FUNCTIONALITY OF ITS PRODUCTS.
No one is allowed to copy or distribute the whole or a part of this document without prior written permission of NDL.
NDL here means National Nano device Laboratories.
CONFIDENTIAL 2
Purpose
• This document is intended to help users who want toapply NDL 8” bulk FinFET baseline process to dofabrication.
• Please be notified that users should follow the processguideline in this document to do fabrication without anyviolation.
Contact information : mcchen@narlabs.org.tw (陳旻政組長)
CONFIDENTIAL 3
CONTENTS
CONFIDENTIAL 4
Disclaimer ..………………………………………………………………... 02Purpose …..…………………………………………………………………. 03Revision History …………………………………………………………. 05
Process Flow Chart …………………………………………….......... 06Process of Records …………………………………………….......... 07Appendix A ‐ Equipment layout ……………………………….... 142Appendix B ‐ List of recipes ………………………………………... 143Appendix C ‐ Flow chart of process ………………………….... 153Appendix D ‐ Run card of process ………………………………. 154Appendix E ‐ Assistance list ………………………………………... 157Appendix F ‐ Platform performance …..……………………... 158
Revision History
• 2013/12/16 Release Version 1.• 2014/05/28 Release Version 2.
CONFIDENTIAL 5
Process Flow Chart
6
TEOSTEOSTEOS
Wafer clean HM SiN dep. &Active patterning
Si trench etching HDPCVD OX dep. &RT region patterning
RT etching
Silicide mask etching ILD dep. &Contact patterning
Contact etching Metal dep. &Metal pad patterning
Metal pad etching
PR
E‐Beam
HDP
Al‐Cu
HM remove &Fin etching back
Gox / TiN Gate dep. &Gate patterning
Gate etchingS/D Imp. & AnnealOxford ox dep. & Silicide mask patterning
PR
E‐Beam
P‐type Si
HM HM
TiN
HM
SiO2
n‐ n‐ n‐ n‐ n‐ n‐
PR
SiO2 SiO2
Pad ox
SiON
PR
PR
E‐Beam
Imp.
n‐ n‐
NiSix NiSix
PR
E‐Beam E‐Beam
E‐Beam
Process of Record #1
CONFIDENTIAL 7
NDL Process node
Equipment
Recipe
Laser Marker
M11
1. Surface of the wafers should be clean.
Equipment : NAAcceptance criteria :Laser mark = Group name (ex:BIO) + Serial number (1~) +Wafer number (1~25), see Fig. 1
Fig. 1
Check point before process Check point after process
BIO1 - 01NA
Process of Record #2
CONFIDENTIAL 8
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean-SC-1
C10-SC1
Temp = 45 Time = 10 min
1. The status of the equipment should be in normal running mode.
2. Parameters checkNH4OH : H2O2 : H2O = 1:1:5
Equipment : NAAcceptance criteria : The surface of the wafers should be clean.
Process of Record #3
CONFIDENTIAL 9
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-P05
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å
Process of Record #4
CONFIDENTIAL 10
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = Zero mark
1. The status of the equipment should be in normal running mode.
Equipment : NAAcceptance criteria : NA
Fig. 2
Process of Record #5
CONFIDENTIAL 11
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-P05
1. The status of the equipment should be in normal running mode.
Equipment : In-line SEMAcceptance criteriaThe picture should look like Fig.2
Process of Record #6
CONFIDENTIAL 12
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Poly
E10
Recipe = NDL_Zeromark_deep_Si_PM2
1. The status of the equipment should be in normal running mode.
Equipment : P10Acceptance criteria :Depth > 1.1 um
Process of Record #7
CONFIDENTIAL 13
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR(8")
E10
Recipe = NDL_PR_removal_PM4
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
2. Parameters checkTime = 120 sec
Process of Record #8
CONFIDENTIAL 14
NDL process node
Equipment
Recipe
Check point before process Check point after process
WetEtch-PR(8")
C10-PR-SPM
Material = H2SO4Temp = 125 Time = 600 sec
Equipment : OMAcceptance criteria :The photo resistor should be clean under microscope.
1. The status of the equipment should be in normal running mode
2. Parameters checkH2SO4 : H2O2 = 200 : 1
Process of Record #9
CONFIDENTIAL 15
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean STD+HF
G-STD+HF(8")
SC - 1 = 45 / 10minSC - 2 = 45 / 10minDHF = 25 / 1min
Equipment : NAAcceptance criteria : The surface of the wafers should be clean.
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6DHFHF : H2O = 1:50
Process of Record #10
CONFIDENTIAL 16
NDL process node
Equipment
Recipe
Check point before process Check point after process
V-DryOxide
T13
Recipe = Dr 900300
1. The status of the equipment should be in normal running mode.
2. Parameters checkDry oxide, 900, 300Å
Equipment : N&K 1500Acceptance criteria :Oxide thickness = 300Å ± 5%
CONFIDENTIAL 17
P-type Bulk Si wafer
Deposition：Sac Oxide 300 Å
Dry‐Oxide
Part.0 ：Wafer start
Process of Record #11‐NMOS
CONFIDENTIAL 18
NDL process node
Equipment
Recipe
Check point before process Check point after process
Implant
S06
DOSE : 5E13Energy :45KSource : BF2
49+
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
Process of Record #11‐PMOS
CONFIDENTIAL 19
NDL process node
Equipment
Recipe
Check point before process Check point after process
Implant
S06
DOSE : 1E14Energy :45KSource : P31+
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
CONFIDENTIAL 20
NMOS Imp.：BF249+ , Energy = 45keV, Dose = 5E13 cm‐2
PMOS Imp.：P31+ , Energy = 45keV, Dose = 1E14 cm‐2
Part.0 ：Wafer start
P-type Bulk Si wafer
Dry‐Oxide
Process of Record #12
CONFIDENTIAL 21
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean STD
G-STD(8")
SC - 1 = 45 / 10minSC - 2 = 45 / 10min
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6
Equipment : NAAcceptance criteria :The surface of the wafers should be clean.
Process of Record #13
CONFIDENTIAL 22
NDL process node
Equipment
Recipe
Check point before process Check point after process
V-Wet-Oxide
T13
Recipe = W1KC20HA
1. The status of the equipment should be in normal running mode.
2. Parameters checkWet oxide, 1000, 2000Å
Equipment : N&K 1500Acceptance criteria :Oxide thickness = 2000Å ± 10%
CONFIDENTIAL 23
Part.0 ：Wafer start (PMOS)
P-type Bulk Si wafer
Dry‐Oxide
Drive in： 1000oC, 2000 Å Wet‐Oxide
P ‐
Process of Record #14
CONFIDENTIAL 24
NDL process node
Equipment
Recipe
Check point before process Check point after process
WetEtch-BOE
C05-10
Tank = BOETemp = 25 Time = 180 sec
1. The status of the equipment should be in normal running mode.
Equipment : NAAcceptance criteria :The back of the wafer should be water resistant.
CONFIDENTIAL 25
Part.0 ：Wafer start (PMOS)
P-type Bulk Si wafer
P ‐
Etch (Wet; BOE)：Oxide
Process of Record #15
CONFIDENTIAL 26
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean STD+HF
G-STD+HF(8")
SC - 1 = 45 / 10minSC - 2 = 45 / 10minDHF = 25 / 30sec
Equipment : NAAcceptance criteria : The surface of the wafer should be clean.
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6DHFHF : H2O = 1:50
Process of Record #16
CONFIDENTIAL 27
NDL process node
Equipment
Recipe
Check point before process Check point after process
V-DryOxide
T13
Recipe = Dr 80050A
1. The status of the equipment should be in normal running mode.
2. Parameters checkDry oxide, 800, 50Å
Equipment : NAAcceptance criteria : Oxide thickness = 50Å ± 5%
CONFIDENTIAL 28
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Deposition：Pad Oxide 50 Å
Part.1 ：Fin structure fabrication
Dry‐Oxide
Process of Record #17
CONFIDENTIAL 29
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean
G-STD
SC - 1 = 45 / 10minSC - 2 = 45 / 10min
Equipment : NAAcceptance criteria : The surface of the wafer should be clean.
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6
Process of Record #18
CONFIDENTIAL 30
NDL process node
Equipment
Recipe
Check point before process Check point after process
PESiN
T26
Recipe = Nitride 500A
1. The status of the equipment should be in normal running mode.
Equipment : N&K 1500Acceptance criteria : SiN thickness = 500Å ± 5%
CONFIDENTIAL 31
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Deposition：Nitride (HM) 500 Å
Part.1 ：Fin structure fabrication
PESiNDry‐Oxide
Process of Record #19
CONFIDENTIAL 32
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-CAN
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 1000Å ± 30Å
Process of Record #20
CONFIDENTIAL 33
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = NDL_yfhou_bulkfinfetPORV1_act
1. The status of the equipment should be in normal running mode.
2. Parameters checkLayer 43, dose=90 (Pad)Layer 51, dose=64 (30-400nm)
Equipment : NAAcceptance criteria : NA
CONFIDENTIAL 34
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Litho：PR(‐) Coating + Exposure (E‐beam)
Part.1 ：Fin structure fabrication
PESiNDry‐Oxide
Photo Resist
E-Beam
Process of Record #21
CONFIDENTIAL 35
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-CAN
1. The status of the equipment should be in normal running mode.
Fig. 3
Equipment : In-line SEMAcceptance criteria :The picture should look like Fig.3
CONFIDENTIAL 36
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Litho：Development
Part.1 ：Fin structure fabrication
PESiNDry‐Oxide
PR
30 nm
Process of Record #22
CONFIDENTIAL 37
NDL process node
Equipment
Recipe
Check point before process Check point after process
PR-trimming
E10
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.
Recipe = NDL_P.R_trimmming_R02_PM2
Equipment : In-line SEMAcceptance criteria : Active photo width ≒ 22 nm(依個人所需)
CONFIDENTIAL 38
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Part.1 ：Fin structure fabrication
PESiNDry‐Oxide
PR
Etch (Dry)：PR trimming
23 nm
Process of Record #23
CONFIDENTIAL 39
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Poly
E10
Recipe = NDL_bulkfinfet_STI_PM2
1. The status of the equipment should be in normal running mode.
2. Parameters checkStep 1HM SiN etching rate ≒ 45Å/1secTime ≒ 12secStep 2 Etch-PRStep 3Si trench etching rate ≒ 40Å/1secTime ≒ 50sec
Equipment : P10Acceptance criteria :STI depth ≒ 2500Å
CONFIDENTIAL 40
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Etch (Dry)：SiN + PR remove + Si
Part.1 ：Fin structure fabrication
PR
Process of Record #24
CONFIDENTIAL 41
NDL process node
Equipment
Recipe
Check point before process Check point after process
WetEtch-PR
C10-PR-SPM
Material = H2SO4Temp = 125 Time = 600 sec
Equipment : OMAcceptance criteria : The photo resistor should be clean under microscope.
1. The status of the equipment should be in normal running mode.
2. Parameters checkH2SO4 : H2O2 = 200 : 1
CONFIDENTIAL 42
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Etch：PR remove
Part.1 ：Fin structure fabrication
Active AEI
CONFIDENTIAL 43
Top view Cross section
Si
SiN (HM)
100nm
Si
SiN (HM)
StructureDevice
Process of Record #25
CONFIDENTIAL 44
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean STD
G-STD
SC - 1 = 45 / 10 minSC - 2 = 45 / 10 min
Equipment : NAAcceptance criteria :The surface of the wafer should be clean.
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6
Process of Record #26
CONFIDENTIAL 45
NDL process node
Equipment
Recipe
Check point before process Check point after process
V-DryOxide
T13
Recipe = Dr 80050A
1. The status of the equipment should be in normal running mode.
2. Parameters checkDry oxide, 800, 50Å
Equipment : NAAcceptance criteria :Oxide thickness = 50Å ± 5%
CONFIDENTIAL 46
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Part.1 ：Fin structure fabrication
Deposition：Linear Oxide 50 Å
Process of Record #27
CONFIDENTIAL 47
NDL process node
Equipment
Recipe
Check point before process Check point after process
HF-Dip
C10-DHF
DHF = 25 / 30 sec
1. The status of the equipment should be in normal running mode.
2. Parameters checkDHFHF : H2O = 1:50
Equipment : NAAcceptance criteria : The back of the wafer should be water resistant.
CONFIDENTIAL 48
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Part.1 ：Fin structure fabrication
Etch (Wet; HF)：Linear oxide
Process of Record #28
CONFIDENTIAL 49
NDL process node
Equipment
Recipe
Check point before process Check point after process
V-DryOxide
T13
Recipe = Dr 80050A
1. The status of the equipment should be in normal running mode.
2. Parameters checkDry oxide, 800, 50Å
Equipment : NAAcceptance criteria :Oxide thickness = 50Å ± 5%
CONFIDENTIAL 50
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Part.1 ：Fin structure fabrication
Deposition：Linear Oxide 50 Å
Process of Record #29
CONFIDENTIAL 51
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean STD+HF
G-STD+HF(8")
SC - 1 = 45 / 10 minSC - 2 = 45 / 10 minDHF = 25 / 30 sec
Equipment : NAAcceptance criteria : The back of the wafer should be water resistant.
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6DHFHF : H2O = 1:50
Process of Record #30
CONFIDENTIAL 52
NDL process node
Equipment
Recipe
Check point before process Check point after process
HDPCVD-(Frontend8")
T28
Recipe : NDL-bulkfinfet
1. The status of the equipment should be in normal running mode.
2. Parameters checkHDPFilm : HDPSiOHDPSiO : 3000 Å
Equipment : N&K 1500Acceptance criteria :Oxide Thickness = 3000Å ± 5%
CONFIDENTIAL 53
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Deposition：HDPCVD‐SiOx 3000 Å
Part.1 ：Fin structure fabrication
HDPCVD‐Oxide
CONFIDENTIAL 54
總體示意圖 目前結構
截面方向
Part.1 ：Fin structure fabrication
P-type Bulk Si wafer
HDPCVD‐Oxide
Deposition：HDPCVD‐SiOx 3000 Å
HDP dep.
CONFIDENTIAL 55
Cross section ‐ SEM Cross section ‐ FIB
Si
FOX
50 nm
Si
FOX
DeviceStructure
Process of Record #31
CONFIDENTIAL 56
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Oxide(8")
E01
Recipe = NDL_bulkfinfet_OX_PM3
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters Check
Oxide etching rate ≒ 77Å / 1secTime ≒ 16 sec
Equipment : N&K 1500Acceptance criteria :Check scribe line such as Fig. 4.HDPSiO≒2000~2100 Å ( Exposed SiN HM )
Fig. 4
Check here (Scribe Line)
CONFIDENTIAL 57
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Etch (Dry)：Oxide [until “Nitride” appears]
Part.1 ：Fin structure fabrication
CONFIDENTIAL 58
Part.1 ：Fin structure fabrication
P-type Bulk Si wafer
HDPCVD‐Oxide
Etch (Dry)：Oxide [until “Nitride” appears] 總體示意圖 目前結構
截面方向
Process of Record #32
CONFIDENTIAL 59
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-P05
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å
Process of Record #33
CONFIDENTIAL 60
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = NDL_yfhou_bulkfinfetPORV1_RT
1. The status of the equipment should be in normal running mode
2. Parameters checkLayer 20, dose=80 (Pad)
Equipment : NAAcceptance criteria : NA
CONFIDENTIAL 61
Part.1 ：Fin structure fabrication
P-type Bulk Si wafer
HDPCVD‐Oxide
LIT：PR(+) Coating + Exposure
Remark ：RT (Reverse‐Tone) LIT defines the region of “Pad” (clear) to etch oxide.
RT RT
Photo Resist
E-Beam
總體示意圖 目前結構
截面方向
Process of Record #34
CONFIDENTIAL 62
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-P05
1. The status of the equipment should be in normal running mode.
Equipment : In-line SEMAcceptance criteriaThe picture should look like Fig.5
Fig. 5
Process of Record #35
CONFIDENTIAL 63
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Oxide(8")
E01
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters Check
Oxide etching rate ≒ 77Å / 1secTime ≒ 24 sec
Equipment : N&K 1500Acceptance criteria :Check NK PAD (As Fig.6)Si sub / SiN ≒ 200 Å (GOF=99%)
Recipe = NDL_bulkfinfet_OX_PM3
Fig. 6
NK PADNK PAD
CONFIDENTIAL 64
Part.1 ：Fin structure fabrication
P-type Bulk Si wafer
HDPCVD‐Oxide
Etch (Dry)：Oxide
Photo Resist
總體示意圖 目前結構
截面方向
Process of Record #36
CONFIDENTIAL 65
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR(8")
E10
Recipe = NDL_PR_removal_PM4
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
2. Parameters checkTime = 120 sec
Process of Record #37
CONFIDENTIAL 66
NDL process node
Equipment
Recipe
Check point before process Check point after process
WetEtch-PR(8")
C10-PR-SPM
Material = H2SO4Temp = 125 Time = 600 sec
Equipment : OMAcceptance criteria :The photo resistor should be clean under microscope.
1. The status of the equipment should be in normal running mode
2. Parameters checkH2SO4 : H2O2 = 200 : 1
CONFIDENTIAL 67
Part.1 ：Fin structure fabrication
P-type Bulk Si wafer
Etch：PR remove 總體示意圖 目前結構
截面方向
RT AEI
CONFIDENTIAL 68
0.2 um
FOX Active Pad
RT
Si
Top view Cross section ‐ SEM
RT
FOX
Process of Record #38
CONFIDENTIAL 69
NDL process node
Equipment
Recipe
Check point before process Check point after process
HF-Dip(8")
C10-DHF
DHF = 25 / 10 sec
1. The status of the equipment should be in normal running mode.
2. Parameters checkDHFHF : H2O=1:50
Equipment : NAAcceptance criteria : NANote : Need to be continue with next step.
Process of Record #39
CONFIDENTIAL 70
NDL process node
Equipment
Recipe
Check point before process Check point after process
WetEtch-H3PO4
C05-09
Tank = H3PO4Time : 60 minTemp : 150
1. The status of the equipment should be in normal running mode.
2. Add H2SiF6(六氟矽酸) is better.
Equipment : N&K 1500Acceptance criteria :1. Check NK PAD
Si sub / SiN ≒ 10Å ± 10Å(GOF=99%)
2. Check HDP oxide residue.
CONFIDENTIAL 71
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Etch (Wet; H3PO4)：Nitride
Part.1 ：Fin structure fabrication
Process of Record #40
CONFIDENTIAL 72
NDL process node
Equipment
Recipe
Check point before process Check point after process
HF-Dip(8")
C10-DHF
DHF = 25
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters check
DHF HF:H2O=1:50
Equipment : N&K 1500Acceptance criteria :Check HDP residue to define fin height. (As Fig.8)SEM cross section like Fig.7
Fig. 8
Check here (Scribe Line)Fig. 7
50 nm
FOX
Si
13 nm
CONFIDENTIAL 73
總體示意圖 目前結構
截面方向
P-type Bulk Si wafer
Etch (Wet; HF)：Oxide
Part.1 ：Fin structure fabrication
Process of Record #41
CONFIDENTIAL 74
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean-RCA(8")
G-RCA(8")
1. The status of the equipment should be in normal running mode.
2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6SPMH2SO4 : H2O2 = 4:1 DHFHF : H2O = 1:50
Equipment : NAAcceptance criteria : NA
SC - 1 = 45 / 10 minSC - 2 = 45 / 10 minSPM = 125 / 10 minDHF = 25 / 10 sec
Process of Record #42
CONFIDENTIAL 75
NDL process node
Equipment
Recipe
Check point before process Check point after process
V-SiON
T13
Recipe = SiON80020
1. The status of the equipment should be in normal running mode.
Equipment : NAAcceptance criteria : Oxide thickness = 20Å ± 5ÅNote : Need to be continue with next step.
Process of Record #43
CONFIDENTIAL 76
NDL process node
Equipment
Recipe
Check point before process Check point after process
ALD-CVD
RDT001
Recipe = TiN‐336C
1. The status of the equipment should be in normal running mode.
2. Parameters checkTiN = 100Å
Equipment : Metal-Rs (M19)Acceptance criteria : Rs≒180~190 Ω/Note : Need to be continue with next step.
Process of Record #44
CONFIDENTIAL 77
NDL process node
Equipment
Recipe
Check point before process Check point after process
PVD-TiN(8")
T29
1. The status of the equipment should be in normal running mode.
2. Parameters checkTiN = 400Å
Recipe = R1_TiN_15KW_W/O_BIAS_80 sec
Equipment : Metal-Rs (M19)Acceptance criteria : Rs≒30Ω/
總體示意圖 目前結構
CONFIDENTIAL 78
截面方向
P-type Bulk Si wafer
Deposition：SiON + ALD‐TiN + PVD‐TiN
Part.2 ：Gate fabrication
TiNSiON
Process of Record #45
CONFIDENTIAL 79
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-NEB
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å
Process of Record #46
CONFIDENTIAL 80
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = NDL_yfhou_bulkfinfetPORV1_gate_NEB
1. The status of the equipment should be in normal running mode.
2. Parameters checkLayer 46, dose=10 (Pad)Layer 11, dose=13 (50-400nm)
Equipment : NAAcceptance criteria : NA
總體示意圖 目前結構
CONFIDENTIAL 81
截面方向
Part.2 ：Gate fabrication
Photo Resist
Litho：PR(‐) Coating + Exposure (E‐beam)
P-type Bulk Si wafer
TiNSiON
E-Beam
Process of Record #47
CONFIDENTIAL 82
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-NEB
1. The status of the equipment should be in normal running mode.
Equipment : In-line SEMAcceptance criteria : The picture should look like Fig.9
Fig. 9
S/D S/D
Gate
總體示意圖 目前結構
CONFIDENTIAL 83
截面方向
Part.2 ：Gate fabrication
Litho：Development
PR
P-type Bulk Si wafer
TiNSiON
Process of Record #48
CONFIDENTIAL 84
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR trimming(8")
E11
Recipe = NDL_PR_trimming_R01_PM2
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.
Equipment : In-line SEMAcceptance criteria : Gate photo width ≒ 50 nm(依個人所需)
總體示意圖 目前結構
CONFIDENTIAL 85
截面方向
Part.2 ：Gate fabrication
Etch (Dry)：PR trimming
PR
P-type Bulk Si wafer
TiNSiON
50 nm
Process of Record #49
CONFIDENTIAL 86
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Metal(8")
E11
Recipe = NDL_Metal_gate_TiN_R13_EP_PM2
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters check :
ME = 10 secOE = 1 sec
Equipment : Low-temp measurement (M17)Acceptance criteria : Check scribe line is open (Fig. 10)
Fig. 10
Check here (Scribe Line)
Recipe fine tune 中
總體示意圖 目前結構
CONFIDENTIAL 87
截面方向
Part.2 ：Gate fabrication
Etch (Dry)：TiN + SiON
PR
P-type Bulk Si wafer
TiNSiON
Process of Record #50
CONFIDENTIAL 88
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR(8"backend)
E11
Recipe = NDL_PR_strip_240s_PM1
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
2. Parameters checkTime = 240 sec
總體示意圖 目前結構
CONFIDENTIAL 89
截面方向
Part.2 ：Gate fabrication
Etch：PR remove
P-type Bulk Si wafer
TiNSiON
Gate AEI
CONFIDENTIAL 90
Top view ‐ TEM Cross section ‐ TEM
20 nm
FOX
Si
TiN
12 nm
Si Gox : 22Å
20 nm
TiN54 nm
S/D S/D
Gate
S/D S/D
Gate
Process of Record #51‐NMOS
CONFIDENTIAL 91
NDL process node
Equipment
Recipe
Check point before process Check point after process
Implant
S06
DOSE : 5E14Energy :10Source : As75+
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
Process of Record #52‐PMOS
CONFIDENTIAL 92
NDL process node
Equipment
Recipe
Check point before process Check point after process
Implant
S06
DOSE : 5E15Energy :10Source : BF249+
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
CONFIDENTIAL 93
Part.3 ：Implantation & Activation
P-type Bulk Si wafer
TiNSiON
Imp.：
Source Dose Energy (keV) Tilt TwistN As75+ 5E14 10 0 0
P BF249+ 5E15 10 0 0
總體示意圖 目前結構
截面方向
Process of Record #53
CONFIDENTIAL 94
NDL process node
Equipment
Recipe
Check point before process Check point after process
RTA-Metal
*
Recipe = 8RTA800
1. The status of the equipment should be in normal running mode.
2. Parameters checkTemp : 800 Time : 30 sec
Equipment : NAAcceptance criteria : NA
CONFIDENTIAL 95
Part.3 ：Implantation & Activation
P-type Bulk Si wafer
TiNSiON
Anneal：800∕ 30sec ∕ N2
N‐ N‐
Example: NMOS
總體示意圖 目前結構
截面方向
Device
CONFIDENTIAL 96
Cross section ‐ TEM
GateS/D
Top view ‐ FIB
Gox = 18 nm
Si
TiN
Process of Record #54
CONFIDENTIAL 97
NDL process node
Equipment
Recipe
Check point before process Check point after process
Oxford-PESiO2
T19
Recipe = PESiO2 500Å
1. The status of the equipment should be in normal running mode.
Equipment : N&K 1500Acceptance criteria :The PESiO2 thickness = 500Å ±100Å
總體示意圖 目前結構
CONFIDENTIAL 98
截面方向
Part.4 ：Silicide
P-type Bulk Si wafer
TiNSiONN‐ N‐
Deposition：Oxford‐PESiO2
SiO2
Process of Record #55
CONFIDENTIAL 99
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-P05
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å
總體示意圖 目前結構
CONFIDENTIAL 100
截面方向
Part.4 ：Silicide
P-type Bulk Si wafer
TiNSiONN‐ N‐
SiO2
LIT：PR(+) Coating + Exposure
Remark ：The profile is the same as “RT” layer.
Photo Resist
E-Beam
Process of Record #56
CONFIDENTIAL 101
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = NDL_yfhou_bulkfinfetPORV1_silicide
1. The status of the equipment should be in normal running mode
2. Parameters checkLayer 20, dose=125 (Pad)
Equipment : NAAcceptance criteria : NA
Process of Record #57
CONFIDENTIAL 102
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-P05
1. The status of the equipment should be in normal running mode.
Equipment : In-line SEMAcceptance criteria :The picture should look like Fig.11
Fig. 11
總體示意圖 目前結構
CONFIDENTIAL 103
截面方向
Part.4 ：Silicide
P-type Bulk Si wafer
TiNSiONN‐ N‐
SiO2
LIT：Development
Remark ：The profile is the same as “RT” layer.
PR
Process of Record #58
CONFIDENTIAL 104
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Oxide(8")
E11
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters Check
Oxide etching rate ≒ 66 Å / secTime = 6 sec
Equipment : NAAcceptance criteria : NA
Recipe = NDL_bulkfinfet_OX_PM3
總體示意圖 目前結構
CONFIDENTIAL 105
截面方向
Part.4 ：Silicide
P-type Bulk Si wafer
TiNSiONN‐ N‐
SiO2
PR
Etch (Dry)：SiO2
Process of Record #59
CONFIDENTIAL 106
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean-BOE-Backend
*
Tank = BOE
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters Check
BOE HF : H2O = 1:50Time = 120 sec
Equipment : Low-temp measurement (M17)Acceptance criteria : Check active pad open.SEM should look like Fig.12.
Fig. 12
Process of Record #60
CONFIDENTIAL 107
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR(8"backend)
E11
Recipe = NDL_PR_strip_240s_PM1
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
2. Parameters checkTime = 240 sec
總體示意圖 目前結構
CONFIDENTIAL 108
截面方向
Part.4 ：Silicide
Etch：PR remove
SiO2
P-type Bulk Si wafer
TiNSiONN‐ N‐
Process of Record #61
CONFIDENTIAL 109
NDL process node
Equipment
Recipe
Check point before process Check point after process
PVD-multilayer(8")
T29
Recipe = ICP+Ni 100Å+Ti 100Å
1. The status of the equipment should be in normal running mode.
2. Parameters checkICPF1_ETG_9sec_450/200WNi 100ÅR1_Ni_1.5kw25sccmAr10secTi 100ÅF3_Ti_DC_128.4sec_10nm
Equipment : NAAcceptance criteria : NANote : Need to be continue with next step.
SiO2
CONFIDENTIAL 110
Part.4 ：Silicide
總體示意圖 目前結構
截面方向
Deposition：PVD‐ Ni + Ti
P-type Bulk Si wafer
TiNSiONN‐ N‐
NiTi
Process of Record #62
CONFIDENTIAL 111
NDL process node
Equipment
Recipe
Check point before process Check point after process
RTA-Metal
*
Recipe = 8RTA250
1. The status of the equipment should be in normal running mode ( Thermocouple ).
2. Parameters checkTemp : 250 Time : 30s
Equipment : NAAcceptance criteria : NANote : Need to be continue with next step.
CONFIDENTIAL 112
Part.4 ：Silicide
總體示意圖 目前結構
截面方向
RTA (1st)：250∕ 30sec.【Ni‐silicide formation】
SiO2
P-type Bulk Si wafer
TiNSiON
NiTi
NiSiNiSi
CONFIDENTIAL 113
Process of Record #63NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean-H2SO4-Backend
Material = H2SO4Time = 10 minTemp = 120
1. The status of the equipment should be in normal running mode
2. Parameters checkH2SO4 : H2O2 =3 : 1
*
Equipment : Low-temp measurement (M17)Acceptance criteria : Check active pad open or not (I ≒1E-3~1E-4)Note : Need to be continue with next step.
CONFIDENTIAL 114
Part.4 ：Silicide
總體示意圖 目前結構
截面方向
BEOL H2SO4：125∕ 10min. (1:3)
SiO2
P-type Bulk Si wafer
TiNSiON NiSiNiSi
Process of Record #64
CONFIDENTIAL 115
NDL process node
Equipment
Recipe
Check point before process Check point after process
RTA-Metal
*
Equipment : NAAcceptance criteria : NANote : Need to be continue with next step.
Recipe = 8RTA400
1. The status of the equipment should be in normal running mode. ( Thermocouple ).
2. Parameters checkTemp : 400 Time : 30 sec
CONFIDENTIAL 116
Part.4 ：Silicide
總體示意圖 目前結構
截面方向
SiO2
P-type Bulk Si wafer
TiNSiON NiSiNiSi
RTA (2nd)：400∕ 30sec.
Process of Record #65
CONFIDENTIAL 117
NDL process node
Equipment
Recipe
Check point before process Check point after process
Oxford-PESiO2
T19
Recipe = PESiO2 3000Å
1. The status of the equipment should be in normal running mode.
Equipment : NAAcceptance criteria : PESiO2 thickness = 3000ű10%
CONFIDENTIAL 118
P-type Bulk Si wafer
TiNSiON
SiO2
Part.5 ：Contact
Deposition：Oxford‐PESiO2 3000Å
PE‐SiO2 PE‐SiO2
總體示意圖
截面方向
NiSiNiSi
PE‐SiO2
Process of Record #66
CONFIDENTIAL 119
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-P05
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å
Process of Record #67
CONFIDENTIAL 120
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = NDL_yfhou_bulkfinfetPORV1_contact
1. The status of the equipment should be in normal running mode
2. Parameters checkLayer 50, dose=120 (5umx5um)
Equipment : NAAcceptance criteria : NA
CONFIDENTIAL 121
P-type Bulk Si wafer
TiNSiON
SiO2
Part.5 ：Contact
PE‐SiO2 PE‐SiO2
Photo Resist
E-Beam
LIT：PR(+) Coating + Exposure
NiSiNiSi
PE‐SiO2
Fig. 13-1 ( V2 contact )
Process of Record #68
CONFIDENTIAL 122
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-P05
1. The status of the equipment should be in normal running mode.
Equipment : In-line SEMAcceptance criteria : The picture should look like Fig.13
Fig. 13-2( V1 contact )
CONFIDENTIAL 123
P-type Bulk Si wafer
TiNSiON
SiO2
Part.5 ：Contact
PE‐SiO2 PE‐SiO2
總體示意圖
截面方向
Photo Resist
LIT：Development
NiSiNiSi
PE‐SiO2
Process of Record #69
CONFIDENTIAL 124
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Oxide(8")
E11
1. The status of the equipment should be in normal running mode.
2. Must check etching rate first.3. Parameters Check
Oxide etching rate ≒ 66 Å / 1secTime ≒48 sec
Equipment : NAAcceptance criteria : NA
Recipe = NDL_bulkfinfet_OX_PM3
Process of Record #70
CONFIDENTIAL 125
NDL process node
Equipment
Recipe
Check point before process Check point after process
Clean-BOE-Backend
*
Tank = BOE 1:50Time = 400sec
1. The status of the equipment should be in normal running mode.
Equipment : FIB Acceptance criteria : The picture should look like Fig.14
Fig. 14
Si
OX 2834Å
PR 2094ÅContact
hole
CONFIDENTIAL 126
P-type Bulk Si wafer
TiNSiON
SiO2
Part.5 ：Contact 總體示意圖
截面方向
Photo Resist
Etch (Dry)：PE‐SiO2 【with BOE dip after‐then】
NiSiNiSi
PE‐SiO2
Process of Record #71
CONFIDENTIAL 127
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR(8"backend)
E11
Recipe = NDL_PR_strip_240s_PM1
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
2. Parameters checkTime = 240 sec
CONFIDENTIAL 128
P-type Bulk Si wafer
TiNSiON
SiO2
Part.5 ：Contact 總體示意圖
截面方向
Etch：PR remove
NiSiNiSi
PE‐SiO2
Contact AEI
CONFIDENTIAL 129
Top view ‐ SEM Cross section ‐ FIB
Si
OX 2834 Å
PR 2094 Å
Contact hole
Process of Record #72
CONFIDENTIAL 130
NDL process node
Equipment
Recipe
Check point before process Check point after process
PVD-multilayer(8")
T29
1. The status of the equipment should be in normal running mode.
2. Parameters checkICPF1_ETG_9sec_450/200WTi 50ÅF3_Ti_DC_64.2sec_5nm
Equipment : NAAcceptance criteria : Thickness = 3000Å ± 10%
Recipe = ICP + Ti 50 Å + Al 3000 Å
CONFIDENTIAL 131
P-type Bulk Si wafer
TiNSiON
SiO2
Part.6 ：Metal 總體示意圖
截面方向
NiSiNiSi
Ti
Deposition：PVD‐ Ti + AlSiCu
AlSiCu AlSiCuAlSiCu
PE‐SiO2
Ti
Process of Record #73
CONFIDENTIAL 132
NDL process node
Equipment
Recipe
Check point before process Check point after process
Coating-(E-beam-SB350)
G-L17
Recipe = 2-2COT-NEB
1. The status of the equipment should be in normal running mode.
Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å
Process of Record #74
CONFIDENTIAL 133
NDL process node
Equipment
Recipe
Check point before process Check point after process
Exposure-(E-Beam-SB350)
L19
Job Name = NDL_yfhou_bulkfinfetPORV1_metal
1. The status of the equipment should be in normal running mode.
2. Parameters checkLayer 10, dose=80
Equipment : NAAcceptance criteria : NA
CONFIDENTIAL 134
P-type Bulk Si wafer
TiNSiON
SiO2
Part.6 ：Metal 總體示意圖
截面方向
NiSiNiSi
TiAlSiCu AlSiCu
AlSiCu
PE‐SiO2
Ti
E-Beam LIT：PR(‐) Coating + Exposure
Photo Resist
Process of Record #75
CONFIDENTIAL 135
NDL process node
Equipment
Recipe
Check point before process Check point after process
Development-(E-Beam-SB350)
G-L17
Recipe = 2-4DEV-NEB
1. The status of the equipment should be in normal running mode.
Equipment : OMAcceptance criteriaThe picture should look like Fig.15
Fig. 15
CONFIDENTIAL 136
P-type Bulk Si wafer
TiNSiON
SiO2
Part.6 ：Metal 總體示意圖
截面方向
NiSiNiSi
TiAlSiCu AlSiCu
AlSiCu
PE‐SiO2
Ti
LIT：Development
PR
Process of Record #76
CONFIDENTIAL 137
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-Metal(8")
E11
Recipe = NDL_bulkfinfet_Al_metal_pad_PM2
Equipment : Low-temp measurement (M17)Acceptance criteria : Check metal pad open.
1. The status of the equipment should be in normal running mode.
2. Parameters CheckME Time = 40 sec(End point)OE Time = 10 sec (E.P. 停在約 20~25處)
Fig. 16
Check here (ILD area)
CONFIDENTIAL 138
P-type Bulk Si wafer
TiNSiON
SiO2
Part.6 ：Metal 總體示意圖
截面方向
NiSiNiSi
TiAlSiCu AlSiCu
AlSiCu
PE‐SiO2
Etch (Dry)：AlSiCu + Ti
PR
Process of Record #77
CONFIDENTIAL 139
NDL process node
Equipment
Recipe
Check point before process Check point after process
Etch-PR(8"backend)
E11
Recipe = NDL_PR_strip_240s_PM1
Equipment : NAAcceptance criteria : NA
1. The status of the equipment should be in normal running mode.
2. Parameters checkTime = 240 sec
CONFIDENTIAL 140
P-type Bulk Si wafer
TiNSiON
SiO2
Part.6 ：Metal 總體示意圖
截面方向
NiSiNiSi
TiAlSiCu AlSiCu
AlSiCu
PE‐SiO2
Etch：PR remove
Metal AEI
CONFIDENTIAL 141
Top view ‐ FIB Cross section ‐ TEM
GateS/D
20 nm
AlCu
Oxford ox Ti
Si
NiSix
Appendix ‐ A• NDL fab Equipment Layout
142
Appendix ‐ B• Brief Lists of bulk FinFET recipes
143
1. FilmRecipe = W1KC20HA (Furnace)Recipe = Dr 80050A (Furnace)Recipe = SiON80020 (Furnace)Recipe = NDL‐bulkfinfet (HDP)Recipe = PESiO2 500Å (Oxford)Recipe = PESiO2 3000Å (Oxford)Recipe = TiN‐336C (ALD)Recipe = R1_TiN_15KW_W/O_BIAS_80 sec (PVD)Recipe = R1_Ni_1.5kw25sccmAr10sec (PVD)Recipe = F3_Ti_DC_64.2sec_5nm (PVD)
2. EtchRecipe = NDL_P.R_trimmming_R02_PM2Recipe = NDL_bulkfinfet_STI_PM2Recipe = NDL_bulkfinfet_OX_PM3Recipe = NDL_PR_removal_PM4Recipe = NDL_PR_strip_240s_PM1 Recipe = NDL_Metal_gate_TiN_R13_EP_PM2 Recipe = NDL_bulkfinfet_Al_metal_pad_PM2
3. AnnealRecipe = 8RTA800Recipe = 8RTA250Recipe = 8RTA400
Appendix ‐ B• Brief Lists of bulk FinFET recipes
144
Bulk FinFET Mask 檔名 : bulkfinfetPORV1
1. Zero mark : NDL_HCC_DCMARK_V2
2. Active (CAN負光阻) NDL_ yfhou‐bulkfinfetPORV1‐actCell 0Pad : layer : 43 dose 930/40/50/60/70/400 nm : layer : 51 dose 7.5
3. RT (正光阻) NDL_ yfhou‐bulkfinfetPORV1‐RTCell 0Pad : layer : 20 dose 120
4. Gate (負光阻)NDL_ yfhou‐bulkfinfetPORV1‐gate_NEBCell 0Pad : layer : 46 dose 1050/60/70/90/120/150/400 nm : layer : 11 dose 13NDL_ yfhou‐bulkfinfetPORV1‐gate (CAN負光阻, Poly gate)
4. RT (silicide) (正光阻) ‐ 55um x 55umNDL_ yfhou‐bulkfinfetPORV1‐silicideCell 0Pad : layer : 20 dose 120
5. Contact(正光阻) ‐ 5um x 5umNDL_ yfhou‐bulkfinfetPORV1‐contactCell 0Layer : 50 dose 140
6. Metal(負光阻) ‐ 60um x 60umNDL_ yfhou‐bulkfinfetPORV1‐metalCell 0Layer : 10 dose 8.5
Appendix ‐ B• Brief Lists of bulk FinFET recipes
145
3. EtchRecipe = NDL_P.R_trimmming_R02_PM2 (FEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
146
3. EtchRecipe = NDL_bulkfinfet_STI_PM2 (FEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
147
3. EtchRecipe = NDL_bulkfinfet_OX_PM3 (FEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
148
3. EtchRecipe = NDL_PR_removal_PM4 (FEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
149
3. EtchRecipe = NDL_bulkfinfet_OX_PM3 (BEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
150
3. EtchRecipe = NDL_PR_strip_240s_PM1 (BEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
151
3. EtchRecipe = NDL_Metal_gate_TiN_R13_EP_PM2 (BEOL)
Appendix ‐ B• Brief Lists of bulk FinFET recipes
152
3. EtchRecipe = NDL_bulkfinfet_Al_metal_pad_PM2 (BEOL)
Appendix ‐ C• Flow chart of process
153
Laser mark
Zero mark
P‐well implant
SiN HM deposition
Fin pattering
Si trench etching
Si trench filling
Fin etching back
SiO2 Gox deposition
TiN Metal gate deposition
Gate pattering
Source/Drain implant
RTA
Silicide area patterning
PVD Ni
Low temperature annealing
ILD deposition
Contact patterning
Ti/AlSiCu deposition
Metal1 patterning
總共7道光罩、77道步驟，製程時間約 2個月。
1 day
2 days
2 days
1 day
2 days
2 days
1 day
2 days
1 day
1 day
2 days
1 day
2 days
2 days
1 day
1 day
1 day
2 days
1 day
2 days
Appendix ‐ D• Run card of 20nm bulk FinFET
154
Appendix ‐ D• Run card of 20nm bulk FinFET
155
Appendix ‐ D• Run card of 20nm bulk FinFET
156
Appendix ‐ E• Process Engineers for assistance
157
1. Lithography
鄭旭君 工程師 (#7644)
2. Etching
許倬綸 工程師 (#7651)
3. Thin Film
劉思菁 工程師 (#7661)
4. Integration
陳綉芝 技術師 (#7694)
陳奕如 工程師 (#7571)
陳旻政 組長 (#7511)
Appendix ‐ F• Platform performance
158
NMOS PMOS