Post on 17-Mar-2020
Predictable Success
DFM: Status and TrendsAntun Domic, Sr. VP and GM Implementation Group
EDS Fair
Yokohama, JapanJanuary 2008
© 2006 Synopsys, Inc. (2)
Predictable Success
Agenda
• Status Today
••• Future TrendsFuture TrendsFuture Trends
© 2006 Synopsys, Inc. (3)
Predictable Success
VDD1
VDD2
CCS Models Enable Accurate ResultsLess Characterization Cost, Less Design Margin
No-linear Effects of Process Variation• Statistical models
Non-linear Waveforms:• High Impedance nets• Miller Effect• Signal Integrity• Double Switching
Source: Synopsys Inc.
Less VT Corners • Multi-Voltage Design• IR-Drop based STA
Source: Synopsys Inc.
Source: Synopsys Inc.
Source: R. Chau, Intel 2003
Source: Synopsys Inc.
Temperature
Volta
ge
Characterization: 27 Corners
0.80V, -40C
1.20V, -40C
0.80V, 125 C
0.85V, -40C
0.90V, -40C
0.95V, -40C
1.00V, -40C
1.05V, -40C
1.10V, -40C
1.15V, -40C
0.80V, 25 C
0.85V, 25 C
0.90V, 25 C
0.95V, 25 C
1.00V, 25 C
1.05V, 25 C
1.10V, 25 C
1.15V, 25 C
1.20V, 25 C
0.85V, 125 C
0.90V, 125 C
0.95V, 125 C
1.00V, 125 C
1.05V, 125 C
1.10V, 125 C
1.15V, 125 C
1.20V, 125 C CCS
Characterization: 6 CornersAccuracy: 2-3% vs. HSPICE
1.20V, -40C
1.00V, -40C
0.80V, -40C 0.80V, 125 C
1.00V, 125 C
1.20V, 125 C
NLDM
Temperature
Volta
ge
Characterization: 27 Corners
0.80V, -40C
1.20V, -40C
0.80V, 125 C
0.85V, -40C
0.90V, -40C
0.95V, -40C
1.00V, -40C
1.05V, -40C
1.10V, -40C
1.15V, -40C
0.80V, 25 C
0.85V, 25 C
0.90V, 25 C
0.95V, 25 C
1.00V, 25 C
1.05V, 25 C
1.10V, 25 C
1.15V, 25 C
1.20V, 25 C
0.85V, 125 C
0.90V, 125 C
0.95V, 125 C
1.00V, 125 C
1.05V, 125 C
1.10V, 125 C
1.15V, 125 C
1.20V, 125 C CCS
Characterization: 6 CornersAccuracy: 2-3% vs. HSPICE
1.20V, -40C
1.00V, -40C
0.80V, -40C 0.80V, 125 C
1.00V, 125 C
1.20V, 125 C
NLDM
© 2006 Synopsys, Inc. (4)
Predictable Success
Addressing Variation at SignoffA Staged Approach
Most accurate; concurrent die-to-die and on-chip analysis
Intermediate step to statistical
Easy set-up using single bc/wc numbers
Benefit
Requires most characterization data for accurate analysis
Requires silicon data from foundries or in-house fabs
Safe, but pessimistic; becomes overloaded to model many effects
Challenge
Initial usage at 65-nm90-nm to 65-nmDown to 65-nmUsage
Statistical propagation of delay & slew
Path derate as a function of logic depth & cell location
Global derate for early/late timing
Approach
Variation-aware STA (PT & StarRC VX)
Advanced OCV Modeling (AOCVM)
On Chip Variation (OCV)
© 2006 Synopsys, Inc. (5)
Predictable Success
IP Vendor ProvidedIP Vendor ProvidedFoundry ProvidedFoundry Provided
Variation-Aware SSTA FlowGates and Interconnect
prob
abili
ty
CCSVariation-aware
library
Star-RCXT™ VXSensitivity-based
Extraction
Device and interconnectProcess Parameter
Variation Distributions
SPEF w/ sensitivity Variation Reports
PrimeTime® VXVariation-aware STA
Single nxtgrdw/ sensitivity
Netlist
• Accurate RC extraction• Accurate delay calc, STA,
constraints handling, etc.• Accurate models• Correlates to HSpice-
MonteCarlo
Statistical HSPICE Models
Libe
rty™
NC
XC
hara
cter
izat
ion
© 2006 Synopsys, Inc. (6)
Predictable Success
DFM in Physical DesignRespecting Timing, Area, Power, SI
ParticlesParticles Critical Area AnalysisWire Spreading / Widening
LithographyLithography Litho-aware RoutingLitho Hotspot Correction
CMPCMP Rule-based Metal FillModel-Based Metal Fill
ViasVias Via Minimization Redundant Vias
Tim
ing,
Are
a, P
ower
& S
ITi
min
g, A
rea,
Pow
er &
SI
© 2006 Synopsys, Inc. (7)
Predictable Success
CMP Model-Based Metal Fill Uses CMP Simulation Results as Input
Rule-Based CMP-Aware Model-BasedPattern selection based on simulation
© 2006 Synopsys, Inc. (8)
Predictable Success
Litho-Aware Routing: PreventionSupport for Litho-Derived Design Rules
• Avoidance and prevention of unfriendly patternsJogs, notches and gapsLess number of corners
• Support of complex litho related 45nm design rules such as via enclosure, end-of-line rules, …
S
SSW
0.6S
0.6S
End of Line Rules
© 2006 Synopsys, Inc. (9)
Predictable Success
Litho Hotspots: Detection & CorrectionHotspot Identification & Layout Modification
PrimeYield LCCHotspot Detection
IC Compiler Hotspot Correction
Litho Hotspot Detected
Modified Layout