Post on 07-Aug-2018
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
1/52
““Comparison and Status of Low Comparison and Status of Low --
noise Xnoise X--band Oscillator andband Oscillator and Amplifier Technologies Amplifier Technologies””
D. A. Howe and A.D. A. Howe and A. HatiHatiNational Institute of Standards & Technology (NIST), Boulder, CONational Institute of Standards & Technology (NIST), Boulder, CO, USA , USA
Collaborations with Army Research Lab, Office of NavalCollaborations with Army Research Lab, Office of NavalResearch, Optical Frequency Measurements and Ion StorageResearch, Optical Frequency Measurements and Ion Storage
(NIST), Mayo Foundation, MIT(NIST), Mayo Foundation, MIT--LLLL
Acknowledgements of Acknowledgements of OEWavesOEWaves, Inc., Poseidon, Inc., PoseidonScientific, QScientific, Q--Dot, Corp.Dot, Corp.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
2/52
Best-in-class PM noise results and descriptions of X-band amplifiers andoscillators based on recent measurements at NIST. Results are at an
operating frequency of 10 GHz.
Amplifier PM-noise measurements of:
SiGe with feedback noise suppression (FBA) Commercial amplifiers with feedforward noise suppression (FFA)
Array of commercial amplifiers with uncorrelated noise
Typical commercially available amplifiers
Impact of amplifier feedback noise on oscillator, review of Leeson’s model
Oscillator PM-noise measurements of:
Typical low-noise quartz oscillator, multiplied to 10 GHz
Optical Electronic Oscillator using fiber-delay-line resonator Sapphire-loaded CSO using interferometric carrier suppression
High-power air-dielectric CSO using 2W drive and impedance controlled carrier
suppression
DRO feedback oscillator
Optical femtosecond-comb divider with calcium-stabilized reference oscillator
OUTLINE OF TALK
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
3/52
Origins of oscillator phase noise motivates
low-noise amplifier development
resonator
at f o, with
Q L
noise-free amp
(unity gain)
+S a( f m)
S ο( f m)
S b( f m)
Phase stabilization of anoscillator with noise
sources and a resonator
with loaded Q, Q L.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
4/52
GENERAL STRATEGY TO ACHIEVELOW RESIDUAL PHASE NOISE IN AMPLIFIERS
Use low 1/f noise devices
•
1/f noise multiplies up into near carrier noise due to amplifier non-linearities
• Generally HBTs have smaller low-frequency noise than all classes ofFETs
Use a design technique that achieves highly linear amplifier operationPossibilities include:
• Feedback (requires high f t)
• Feedforward (best over a narrow band with careful phase match)
•
Parallel HBTs that are graded for low 1/f noise (power/size cost)• Predistortion (adds to device noise)
• LINC -linear amplification using non-linear components (sampling-rate limited)
Low-noise Microwave Amplifier Measurements
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
5/52
19833 APROPOS_SPAWAR_04
Courtesy of Mayo Foundation
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
6/52
19057 APROPOS_2003
Courtesy of Poseidon Scientific
Low-noise Microwave Amplifier Measurements
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
7/52
19059 APROPOS_2003
Courtesy of Poseidon Scientific
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
8/52
Feedback in Common-Base Amplifier
f t of 350 GHz attained in SiGe HBT
Series-shunt feedback configuration
V S
in R
V BB L R
“SIGe HBTs with cut-off frequency of 350 GHz,” by Rieh, J.S., et al., International Electron Devices Meeting, pp.
771-774, December 2002.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
9/52
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
10/52
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
11/52
2
2 2
4
( )
( )( )
o
OSC
v S f
S f Q f S f
φ
φ
φ
⎧⎪
= ⎨⎪⎩
2
2
o
o
v f
Q
v f
Q
<
>
o f v v= −Fourier frequency (offset frequency)
Leeson’s Oscillator Noise Model
D. B. Leeson, “A simple model of feedback
oscillator noise spectrum,” Proc. IEEE Lett., 1966.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
12/52
SLCO Interferometric Stabilized Cavity Loop Oscillator
Feedback oscillator in which the high-Q cavity serves both
as the resonator and the discriminator. Carrier suppression and high Q increasediscriminator sensitivity.
Univ. of Western Australia, Poseidon Scientific Instruments, Ivanov, et al., 1998
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
13/52
Cavity stabilization of a DRO or YIG oscillator. Cavity serves as passive
discriminator. Carrier suppression and high drive power increasediscriminator sensitivity.
Impedance-controlled-coupling, Cavity-stabilized DRO/YIG
J. Dick (JPL), A. SenGupta, F. Walls (NIST) and C. Nelson, B. Riddle (NIST)
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
14/52
Single-fiber Opto Electronic Oscillator (OEO)
Courtesy of OEWaves, Inc.
Laser
Photodetector RF
Amplifier
RF
Coupler
RF
Filter
Optical Fiber
Optical
Modulator
RF
Output
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
15/52
Single-fiber Opto Electronic Oscillator (OEO)
Courtesy of OEWaves, Inc.
RF Filter
Fiber
Single Loop OEO
Ln
c
⋅
δν
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
16/52
Multi-loop OEO reduces spurs, but:
RF output
Laser Optical
Modulator
Photodetector 1
RF
Ampl if ier
RF
filter
RF
Coupler
Optical Fiber Fiber
splitter
Photodetector 2
RF
Combiner
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
100 1000 10000 100000 1000000 10000000
Offset Frequency (Hz)
P h a s e
N o i s e
( d B c / H z )
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
100 1000 10000 100000 1000000 10000000
Offset Frequenc y (Hz)
P h a s e
N o i s e
( d B c / H z )
- Single Optical Loop 4.4Km
- Dual Optical Loop 8.4Km&2.2Km
D. Eliyahu and L. Maleki Proceedings 2003 IEEE Int.
Freq Control Symposium, pp405
Long fiber
Short fiber
• Not enough spurious suppression for
many RF system needs.•Worse phase noise performance.
Opto-Electronic Oscillator
Q = 10 inoptical systems And Low g-sensitivity
Q = 10 inoptical systems And Low g-sensitivity
111111
Optical Fiber Laser
Optical
Modulator
Photodetector RF
Ampl if ier
RF
Filter
RFCoupler
RF output Single loopOEO
JPL’s
Dual loop
OEO
• OEO has very high Q and frequency agili tyover a wide range…
• But long fiber OEO has spurs…
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
17/52
ComparisonComparison
• The Multi-loop OEO uses
“ energy competition” between
carrier mode and spur modes
to suppress spurs.
Long fiber
Short fiber
• For the Injection-Locked OEO:
the spurs from the master OEO
cannot be supported by the slave
OEO’s.
Master OEO Slave
OEO
In principle, spurs can be
“eliminated” by destructive
interference.
Courtesy of Army Res. Lab.
Spurs are suppressed.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
18/52
Femtosecond Comb Optical Divider
10-5
10-4
10-3
10-2
10-1
100
o r m a
z e
o w
e r
120011001000900800700600
Wavelength (nm)
Broadband Femtosecond Mode-locked Laser Comb f r
•Broadband femtosecond lasersrequire more careful control of the
intracavity dispersion and laser
alignment.
•In this particular case, the convexmirror provides enhanced self-
amplitude modulation which
generates shorter pulses and broader
spectraCourtesy of Scott Diddams, NIST
A. Bartels and H. Kurz, Opt. Lett. 27, 1839 (2002)
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
19/52
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
20/52
Ultra-low PM Noise from Optical Sources
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
21/52
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
22/52
The End The End
D. A. Howe and A.D. A. Howe and A. HatiHatiNational Institute of Standards & Technology (NIST), Boulder, CONational Institute of Standards & Technology (NIST), Boulder, CO, USA , USA
Thanks to many contributors.Thanks to many contributors.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
23/52
Comparison of different classes of microwave amplif iers and oscillators at X-band
Conclusion
K. Ko, K. Lee, “A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit
Topologies for RF and Microwave Applications”, IEEE Journal of Solid State Circuits, Vol. 31, no. 8,
1996.
H. Ainspan,M Soyuer, JO Plouchart, J. Burghartz, “A 6.25 GHz Low DC Power Low-Noise Amplifier
in SiGe”, IEEE Custom Integrated Circuits Conference, 1997.
M. Soyuer,“A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology”, IEEE Radio Frequency
Integrated Circuits Symposium 1997.
R. Gotzfried, F. Beisswanger, S. Gerlach, A. Schuppen, H. Dietrich, U. Seiler, K.-H. Bach and J.
Albers, “RFIC’s for Mobile Communication Systems Using SiGe Bipolar Technology”, IEEE
Transactions on Microwave Theory and Techniques, Vol. 46, no. 5, 1998.
D.Y.C. Lie, X. Yuan, L.E. Larson, Y.H. Wang, A. Senior, J. Mecke, “RF-SoC: low-power single-chip
radio design using Si/SiGe BiCMOS technology,” Proceedings of the 3rd International Microwave
and Millimeter Wave Technology, pp. 30-37, August 2002.
S. Muthukrishnan, “ESD protected SiGe HBT RFIC Power Amplifiers” Thesis: Virginia Polytechnic
Institute and State University, Blacksburg, Va, March 2005.
J.S. Rieh, B. Jagannathan, H. Chen, K.T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F.Golan, D. Greenberg, S.J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K.K.
Vaed, R. Volang, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, “SIGe HBTs with cut-off
frequency of 350GHz,” International Electron Devices Meeting, pp. 771-774, December 2002.
N. Shiramizu, T. Masuda, M. Tanabe, K. Washio, “A 3-10 GHz bandwidth low-noise and low-power
amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology,” CentralRes. Lab., Hitachi Ltd., Tokyo, Japan; This paper appears in: IEEE Radio Frequency integrated
Circuits (RFIC) Symposium, 12-14 June, 2005.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
24/52
Comparison of different classes of microwave amplif iers and oscillators at X-band
Conclusion
“A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit Topologies for RF and
Microwave Applications”, by Ko and Lee, IEEE Journal of Solid State Circuits, Vol. 31, no. 8, 1996.
“A 6.25 GHz Low DC Power Low-Noise Amplifier in SiGe”, by Ainspan, et. al., IEEE Custom
Integrated Circuits Conference, 1997.
“A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology”, by Soyuer, IEEE Radio FrequencyIntegrated Circuits Symposium 1997.
“RFIC’s for Mobile Communication Systems Using SiGe Bipolar Technology”, by Gotzfried et. al.,
IEEE Transactions on Microwave Theory and Techniques, Vol. 46, no. 5, 1998.
“RF-SoC: low-power single-chip radio design using Si/SiGe BiCMOS technology,” by Lie, D.Y.C.,
Yuan, X., Larson, L.E., Wang, Y.H., Senior, A., Mecke, J., Proceedings of the 3rd International
Microwave and Millimeter Wave Technology, pp. 30-37, August 2002.
“ESD protected SiGe HBT RFIC Power Amplifiers” by Muthukrishnan, S., Thesis: Virginia
Polytechnic Institute and State University, Blacksburg, Va, March 2005.
“SIGe HBTs with cut-off frequency of 350GHz,” by Rieh, J.S., Jagannathan, B., Chen, H.,
Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.J.,
Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K.k Volang, R., Ahlgren, D.,Freeman, G., Stein, K., and Subbanna, S., International Electron Devices Meeting, pp. 771-774,
December 2002.
“A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in
0.25- /spl mu/m SiGe BiCMOS technology,” Shiramizu, N. Masuda, T. Tanabe, M. Washio,
K. Central Res. Lab., Hitachi Ltd., Tokyo, Japan; This paper appears in: IEEE Radio Frequencyintegrated Circuits (RFIC) Symposium, 12-14 June, 2005.
http://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20masuda%20%20t.%3cIN%3eau)&valnm=++Masuda%2C+T.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20tanabe%20%20m.%3cIN%3eau)&valnm=++Tanabe%2C+M.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20tanabe%20%20m.%3cIN%3eau)&valnm=++Tanabe%2C+M.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20masuda%20%20t.%3cIN%3eau)&valnm=++Masuda%2C+T.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yes
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
25/52
Low-noise Microwave Oscillator Measurements
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c
/ H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DROFemtosecond Comb
Calcium Optical (projected)
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
26/52
SLCOSLCO Interferometric Interferometric Stabilized Cavity Loop Oscillator Stabilized Cavity Loop Oscillator
Active oscillator in which the high-Q cavity serves both
as the resonator and the discriminator. Carrier suppression and high Q increasediscriminator sensitivity.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
27/52
Impedance Impedance - - controlled controlled - - coupling, Cavity coupling, Cavity - - stabilized DRO/YIG stabilized DRO/YIG
Cavity stabilization of a DRO or YIG oscillator. Cavity serves as passivediscriminator. Carrier suppression and high drive power increase
discriminator sensitivity.
O S C
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
28/52
1 GHz Ring Laser
Ti:Sapphire
Gain
532 nm
Pump
⇒ GigaOptics laser, OFS fiber
-50
-40
-30
-20
-10
0
d B b e l o w m
a x i m u m
12001000800600
wavelength (nm)
MicrostructureOptical Fiber
An Octave-Spanning Comb using Microstructure Fiber
With typical microstructured fibers, one needs
about 150 pJ of pulse energy in ~30 fs to generate
an octave of spectrum. This corresponds to 200
mW average power at a 1 GHz rep rate or 15 mW
average power at a 100 MHz rep rate.
f r
Femtosecond Comb Optical Divider
Courtesy of Scott Diddams, NIST
O ill t ’ i
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
29/52
Oscillators’ noise
2
2 24
( )
( )
( )
o
OSC
v S f
S f Q f
S f
φ
φ
φ
⎧⎪
= ⎨⎪⎩
2
2
o
o
v f
Q
v f Q
<
>
o f v v= −
Leeson’s model*
Fourier frequency (offset frequency)
oscillation condition:
*D. B. Leeson, “A simple model of feedback
oscillator noise spectrum,” Proc. IEEE Lett., 1966.
A
0
0
2 f j
Q
H H e ν−
≈
0 A A e φ=
1 H =
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
30/52
-15
-14
-13
-12
-11
-10
-9
-8
0.1 1 10 100 1000 10000 100000
τ[sec]
σ y( τ)
τ
-1
τ-1/2
τ0
τ1/2
0
v y
v
Δ=
10
10
10
10
10
10
10
10
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
31/52
-140
-120
-100
-80
-60
-40
-20
0
1 10 100 1000 10000 100000 1000000
Fourier frequency [Hz]
0
4
h f
=−∑ 0 h f f ≤ ≤4− Sx(f ) =
3 f −
2 f −
1 f −
0 f
( )
New calculation
S f φ
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
32/52
Noise type
y(τ)
0 White phase
1 Flicker phase
2 Random walk phase
3 Flicker frequency
4 Random walk frequency
Frequency Domain
Power Spectral Density
of phase fluctuations
2 = −
Allan Deviation of fractional frequency fluctuations
Time Domain
1τ
−∝
1τ
−∝
1 2 / τ
−∝
0τ∝
1
τ∝
R f f Ad d D i T h i
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
33/52
References for Advanced Design Techniques “A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit
Topologies for RF and Microwave Applications”, by Ko and Lee, IEEE Journal
of Solid State Circuits, Vol. 31, no. 8, 1996.
“A 6.25 GHz Low DC Power Low-Noise Amplifier in SiGe”, by Ainspan, et. al.,
IEEE Custom Integrated Circuits Conference, 1997.
“A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology”, by Soyuer,
IEEE Radio Frequency Integrated Circuits Symposium 1997.
R f f Ad d D i T h i
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
34/52
References for Advanced Design Techniques “RFIC’s for Mobile Communication Systems Using SiGe Bipolar Technology”,
by Gotzfried et. al., IEEE Transactions on Microwave Theory and Techniques,
Vol. 46, no. 5, 1998.
“RF-SoC: low-power single-chip radio design using Si/SiGe BiCMOS
technology,” by Lie, D.Y.C., Yuan, X., Larson, L.E., Wang, Y.H., Senior, A.,
Mecke, J., Proceedings of the 3rd International Microwave and MillimeterWave Technology, pp. 30-37, August 2002.
“ESD protected SiGe HBT RFIC Power Amplifiers” by Muthukrishnan, S.,
Thesis: Virginia Polytechnic Institute and State University, Blacksburg, Va,
March 2005. “SIGe HBTs with cut-off frequency of 350GHz,” by Rieh, J.S., Jagannathan,
B., Chen, H., Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J.,
Golan, F., Greenberg, D., Jeng, S.J., Khater, M., Pagette, F., Schnabel, C.,
Smith, P., Stricker, A., Vaed, K.k Volang, R., Ahlgren, D., Freeman, G., Stein,K., and Subbanna, S., International Electron Devices Meeting, pp. 771-774,
December 2002.
“A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB
communications in 0.25- /spl mu/m SiGe BiCMOS technology,” Shiramizu,N. Masuda, T. Tanabe, M. Washio, K. Central Res. Lab., Hitachi Ltd.,
Tokyo, Japan; This paper appears in: IEEE Radio Frequency integrated
C B LNA R I l ti
http://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yes
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
35/52
C-B LNA: Reverse Isolation
Examining the circuit it is clear that virtually none of the signal at the output
port appears at the input port. C-B amplifier therefore offers excellent reverse
isolation.
C
E
r π
g V m π
C jc
RbB
C π
Re RS
_ rev availP
_ rev delvP
L R
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
36/52
IV. LEESON’S EQUATION
1. Origins of Phase Noise
A simple feedback loop (phase servo) predicts phasenoise from device noise figure, baseband noise sourcesand resonator Q.
2. Leeson’s Equation
Predicts Spectral Density (PSD) of Phase Fluctuationsfrom 1/f noise, noise figure, carrier power and loaded Q.
S (f ) Addi i hi h l i f
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
37/52
S a(f m): Additive white thermal noise power at f o.
F : noise figure of the amplifier and resonator
k : Boltzmann’s constant
T : Temperature in Kelvin
B : Set to 1 Hz to give S a(f m) as Power SpectralDensity (PSD). Then normalize to the oscillator output
power, Pc, to give the normalized PSD.
( )cc
maP
FkT
P
FkTB f S == [Hz-1] (1)
Sb(f ): Baseband noise sources upconverted by active
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
38/52
S b(f m): Baseband noise sources upconverted by active
device non-linearity.
Flicker noise (1/f noise)
Shot noise (white noise)
Thermal (white noise)
K 2
K 1/ f
log( f ) (Hz)c’
log[S b(f m)](W/Hz)
Transform the phase servo loop to baseband and combine
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
39/52
Transform the phase servo loop to baseband and combine
normalized input noise sources:
noise-free amp(unity gain)
+S i(f m)
LPF
( ) ( )mim Lo
mo f S f Q
f
f S ⎥⎥⎦
⎤
⎢⎢⎣
⎡
⎟⎟ ⎠
⎞
⎜⎜⎝
⎛
+=
2
21
( )cmcc
miP
K
f P
K
P
FkT f S 21 ++= [Hz-1]
(2) L
or
Q
f f
2=
Output PSD:
Input PSD:
Input Noise Power Spectral Density, Si(f )
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
40/52
Input Noise Power Spectral Density, S i(f m)
[Hz-1] (3)
Log[
K 2/ Pc
K 1/Pc f m
log( f m) (Hz)c c'
FkT/Pc
log[S i(f m)](Hz
-1
)
The intersection of the K 1/ f m and FkT/Pc is the corner
frequency, f c.
( ) ⎟⎟ ⎠
⎞⎜⎜⎝
⎛ +=
m
c
c
mi f
f
P
FkT f S 1
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
41/52
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
42/52
2. Leeson’s Equation
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
43/52
q
Leeson’s equation for the Power Spectral Density of anoscillator:
( )⎥⎥
⎦
⎤
⎢⎢
⎣
⎡
⎟⎟
⎠
⎞⎜⎜
⎝
⎛ +⎟⎟
⎠
⎞⎜⎜
⎝
⎛ +=
2
211
m L
o
m
c
c
mo f Q
f
f
f
P
FkT f S [rad 2/Hz]
Equal to Spectral Density of Phase Fluctuations, [rad 2/Hz],
when AM noise is negligible.
( ) ( )mim L
omo f S
f Q
f f S
⎥⎥
⎦
⎤
⎢⎢
⎣
⎡⎟⎟ ⎠
⎞⎜⎜⎝
⎛ +=
2
21
[Hz-1]( ) ⎟⎟ ⎠
⎞⎜⎜⎝
⎛ +=
m
c
c
mi f
f
P
FkT f S 1
2. Leeson’s Equation, cont.
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
44/52
q ,
[rad 2/Hz]
Single Sided Spectral Density of Phase Fluctuations,
[rad 2
/Hz], versus offset frequency, f m.
( ) ( )⎥⎥
⎦
⎤⎢⎢
⎣
⎡⎟⎟
⎠ ⎞
⎜⎜⎝ ⎛ +⎟⎟
⎠ ⎞
⎜⎜⎝ ⎛ +==
2
211
m L
o
m
c
c
mom f Q
f
f
f
P
FkT f S f S φ
0 Hz f m
S φ [Hz-1
]
S ο (f m)
c
FkT/2Pc
f r
1/ f 3
1/ f2
f m[Hz]
Using Leeson’s Equation to Predict Oscillator Phase Noise
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
45/52
g q
[rad 2/Hz]
Consider two cases:1. High-Q oscillator: f c > f r ,
2. Low-Q oscillator: f c
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
46/52
c
L(f m)
[dBc/Hz
FkT/2Pc
f r
1/ f
1/ f 3
c
L(f m)
[dBc/Hz
FkT/2Pc
1/ f3
1/ f 2
(a) High Q-Oscillator: f r f c
f m [Hz] f m[Hz]
( )⎥⎥
⎦
⎤⎢⎢
⎣
⎡⎟⎟
⎠ ⎞
⎜⎜⎝ ⎛ +⎟⎟
⎠ ⎞
⎜⎜⎝ ⎛ +=
2
112 m
r
m
c
c
m f
f
f
f
P
FkT f L ( ) ( )mm f L f S 2=φ [rad 2/Hz]
C f C O
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
47/52
Comparison of Candidate Oscillators
OscillatorHigh Power Air
CavitySLCO Poseidon OEO
Output coupling Very Low ModerateDirectionalcoupler and
amplifier
Resonator Q Moderate
60,000
High
190,000
Very High
1e9
Loop Power High
1-10 Watts
Moderate
100's mW
Inherent Spurs None None Many
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
48/52
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
49/52
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80-70
-60
-50
-40
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B
c / H z
OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
SLCO Poseidon (Published data)
NIST Cavity Stabilized DRO
Femtosecond Comb
Calcium Optical (projected)
I t f ti C it St bili d DRO/YIG
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
50/52
Interferometic Cavity Stabilized DRO/YIG
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
51/52
Amplifier ComparisonaPROPOS PM noise, goal, and four existing amplifiers (@ 10 GHz)
-200
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c / H z
Projected amp. spec, Pin=0 dBm
MSH-6135501,Pin=+2.57 dBm
MSH-6133401, Pin=+2.57 dBm
HMMC-5618 #1, Pin=+3.7dBm
HMMC-5618 #2, Pin=+3.7dBm
Mayo FFA, Pin=0 dBm
NIST Array, Pin=0 dBm
Typical Microwave Amplifier
Noise Floor of Measurement System
8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers
52/52
MAYO First Feedfoward Amp Results12/ 17/04 aPROPOS amplifier PM noise, goal (@ 10 GHz)
-200
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
1 10 100 1000 10000 100000 1000000 10000000
Frequency (Hz)
L ( f ) d B c / H z
Projected amp. spec,
Pin=0 dBmMayo FFA, Pin=0 dBm
NIST Array, Pin=0 dBm
OE Waves Loop Amp,
Pin=-20 & +10 dBmNoise Floor of
Measurement System