Ch9. Memory Devices

Advance Nano Device Lab. 1

Fundamentals of Modern VLSI Devices 2nd EditionYuan Taur and Tak H.Ning

Ch9. Memory Devices

Ch9.1 Static Random-Access Memory

CMOS SRAM Cell

Basic Operation of a CMOS SRAM Cell

Static Noise Margin of a CMOS SRAM Cell

Other Bistable MOSFET SRAM Cell

Bipolar SRAM Cell

Operation of a Bipolar Inverter

(9.4 )

(9.6 )

(9.7 )

(9.10)

Ch9.2 Dynamic Random-Access Memory

Basic DRAM Cell and Its Operation

(9.11)

Ch9.3 Nonvolatile Memory

MOSFET Nonvolatile Memory Devices

(9.12)

Charge Injection

Charge Storage

(9.13)

Charge Storage

(9.14 )

(9.15)

Charge Erasure

(9.16 )

Write, Read and Erase Operations

NOR and NAND Architecture

Endurance

UV-Erasable Floating-Gate Devices

Stacked-Gate Devices

Devices using Source-Side Injection

Split- and Stacked-Gate Devices

MNOS Device Using Channel Hot Electron Injection

MNOS Device Storing Two Bits per Cell

Ch9. Memory Devices

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