Post on 23-May-2020
Effect of Eu3+
ions on structural, optical and morphological properties of electrochemically
deposited ZnSe thin films
D.Manikandan1, V.Jeyachandran2,A.Manikandan3 1, 2,3AssociateProfessor, Department of Chemistry,
BIST, BIHER, Bharath University,Chennai-73 Dmanikandan.che@bharathuniv.ac.in
Abstract
Semiconductor ZnSe thin film were deposited on ITO coated contacting glass substrate
together with Eu3+
ions by using electrochemical deposition (ECD) technique in an aqueous
electrolyte bath at a low temperature of 50°C. The bath solution maintains with five different
concentration of Eu solution, the concentration on the properties of ZnSe films has been studied.
The voltammetric curves were obtained from cyclic voltammetric (CV) and linear sweep
voltammetric (LSV) in order to study the electrochemical behavior of ZnSO4/Se2-
system on the
different concentration of Eu3+
ions in reaction bath. From the X-ray diffraction study confirmed
that the crystalline structure of as-deposited ZnSe thin films is cubic zinc bland structure and
hexagonal wurtzite structure. The SEM image results reveal that the films have been large
number of uniform spherical grains and smooth back ground also observed. The average optical
band gap value of the as-deposited ZnSe thin films were recorded in the range between 2.98eV
and 3.56eV respectively, these values are obtained from the Tauc’s plot. Room temperature
photoluminescence and Raman spectroscopic studies were also recorded and these results are
discussed.
Keywords: Electrochemical deposition, voltammetric, crystalline structure and optical band gap
value.
1. Introduction
In the resent year there has been increasing interest in the new development of Zn based
nanostructures are widely investigated. In particular, ZnSe based materials suitable for the
application in thin film solar cells as the window material [1]. Also it has potential application
such as high-density optical storage, full color display, light emitting devices, laser screens and
thin film transistor [2,3]. ZnSe has a large band gap (2.7eV) semiconducting material it can be
used to replacement for CdS material in photovoltaic cell [4]. A number of techniques use to
high quality of ZnSe thin film deposit such as physical vapor deposition[5], metal organic
chemical vapor deposition [6], vacuum deposition [7], molecular beam epitaxy [8], vacuum
evaporation [9], chemical bath deposition [10], sputtering [11] and electrodeposition method
[12] are some of well investigate method for the deposition of ZnSe thin films. However, in the
last few year electrochemical deposition technique has emerged as a simple and viable technique
which growing well adhere and quality of thin film for the photoelectronic devices. Also it has
more promising option like simpleness, low energy consumption, practicality, low cost and
International Journal of Pure and Applied MathematicsVolume 119 No. 12 2018, 3799-3821ISSN: 1314-3395 (on-line version)url: http://www.ijpam.euSpecial Issue ijpam.eu
3799
accurate control of films thickness, morphology and composition of thin films [13]. ZnSe thin
film formation can be easily controlled by various electrolyte parameter of the process [14]. On
the other hand, there are several reports available on the electrochemical deposition from
aqueous electrolyte medium [15-21], from the non aqueous solution medium has been published
[22]. Electrochemical deposition [ECD] of the element from the aqueous electrolyte solution
begins after the electrode has been brought to a potential more negative then the equilibrium
potential characteristic of the chosen ion [s,23]. In general rare-earth (RE) metals have effective
luminescent center for rare earth metals doped compound semiconductors are due to their well
and temperature-stable luminescence because of the involved incompletely field 4f shells that are
well screened and slightly affected by the crystalline field. Hence rare-earth element doped one
of the effective approaches improve the luminescence properties of semiconductor materials for
the wide range of potential application in optoelectronics like nonlinear optics, color thin film
electroluminescence screen devices and optical switches [24-29].
In the present communication we are examined the deposition of Eu3+
doped ZnSe thin
films on ITO coated conducting glass substrate by electrochemical deposition technique in an
aqueous electrolyte medium[30-36]. The influence of deposition conditions and their effect on
the structural, morphological, compositional and optical properties of as-deposited ZnSe thin
films were studied.
2. Experimental section
2.1 Materials
The chemicals used in this study were zinc sulphate (ZnSO4), selenium dioxide (SeO2)
and europium (III) acetate hydrate (C6H9EuO6. xH2O) purchased from sigma-Aldrich and used
without any purification[37-42].
2.2 Deposition of Eu doped ZnSe thin films
Eu3+
ion doped ZnSe thin films have been deposited on ITO coated conducting glass
substrate by electrochemical deposition (ECD) technique with a potentiostatic method from CH
instrument USA (model 604E). Electrochemical deposition (ECD) process was done with a five
different concentration of Eu solution was used. The concentration of Eu solution varied from 1
to 5 % of europium (III) acetate hydrate (C6H9EuO6. xH2O) and 0.3M of ZnSO4, 0.03M of SeO2
solutions were used. A conventional three electrode system was employed for the
electrochemical deposition of ZnSe thin films[43-45]. Indium tin oxide (ITO) coated conducting
glass substrate was used as working electrode, platinum wire as counter electrode and the
saturated calomel electrode (Ag /AgCl/KCl) was used as reference electrode. Approximately
1cm2 size of ITO conducting glass substrate was cleaned with soap solution, acetone and double
distilled water, followed by dried in an oven at 60 °C for 30 min. The deposition potential of -
700 mV was used with bath temperature and deposition time was maintained at 50°C and 30
min, respectively. The deposited Eu3+
ion doped ZnSe thin films were taken from bath and
International Journal of Pure and Applied Mathematics Special Issue
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washed with double distilled water followed by dried at room temperature and kept in
desiccators.
2.3. Characterization techniques
The structural properties of electrochemically as-deposited ZnSe thin films were studied
by using X-ray diffraction meter (XPERT-PRO) in the range 2θ = 20-80° with Cu Kα (1.5406
nm) radiation. The surface morphology of as-deposited ZnSe thin films was investigated using a
Quanta 200 FEGE model scanning electron microscopy (SEM). Elemental analysis of the as-
deposited ZnSe thin films were examined using energy diffraction X- ray analysis (EDAX) with
connected to aQuanta 200 FEGE model SEM operating at an accelerating voltage of 20 KV.
Optical absorption studies were performed from UV-visible spectroscopy using PerkinElmer
Lambda 35 UV-visible spectrometer in the wavelength range from 200-1200 nm. Room
temperature photoluminescence (PL) properties of as-deposited ZnSe thin films were carried out
with a Flurospectrometer (FP-5800) spectrograph in range from 300-1100 nm using He-Cd laser
as an excitation source.
3. Results and discussion
3.1Voltammetric study
The cyclic voltammetric experiment was obtained from a stranded three electrode system.
Where ITO glass substrate act as cathode, platinum wire act as anode and saturated calomel
(Ag+/AgCl/KCl) electrode as reference electrode, respectively. The voltammetric curve studied
in the potential of -750 mV Vs SCE. A typical voltammogram scan examined for Eu3+
ions
doped Zn/Se system on ITO glass substrate in an electrolyte solution contains 0.3M ZnSO4 and
0.003M SeO2 at 50°C. When scanning towards negative potential a reduction wave appeared,
when selenium acid is presented in the electrolyte solution.All precursors like Eu, Zn and Se
present in the bath solution the reduction wave appeared at -0.8 V. However increasing Eu
concentration in the bath solution, the reduction wave shifted towards higher potential range and
also changed the shape and height of the subsequent peaks. From this observation we used
potential range of -0.2 to -1.2 V for the deposition of Eu3+
ions doped ZnSe thin films.
Fig 2. Shows linear sweeping voltammetry at various concentrations of Eu3+
ions doped
ZnSe thin films. It clearly showed the doping concentration affected the shape and height of
peaks. The peak current density depends on the square root of scan rate. These features are
studied for an irreversible system and this process is controlled from diffusion [16].
3.2 Structural studies
The crystalline size and crystalline structure characterization of electrochemically
deposited ZnSe:Eu thin films were studied by using X-ray diffraction technique (XRD). From
literature survey ZnSe is known to exist has two structural phase like cubic zinc bland structure
International Journal of Pure and Applied Mathematics Special Issue
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or hexagonal quartzite structure type or some time a mixture of both phase are absorbed [2,5].
The x-ray diffraction pattern of as-deposited ZnSe:Eu thin films on ITO coated glass substrate
with five different concentration of Eu3+
ions is shown in figure1 a-e, respectively. There are
three intense diffraction peaks are observed such as (101), (103), (202) and less intense ITO
substrate peaks also appeared. The (101) observed plane is due to the hexagonal wurtzite
structure is shown in fig 3 (a), 3(c), no other diffraction peaks of ZnO, Zn(OH) observed. Fig
3(b), (d) and (e) shows XRD pattern of as-deposited ZnSe thin films obtained from 2, 4 and 5%
of Eu3+
ions doped. These diffraction samples have some cubic and hexagonal orientation of
intense peaks, the obtained d phasing values were compare with stander d values cod no: ()
which confirm that some hexagonal and cubic phase is also appeared in ZnSe thin films. In order
to examine the crystalline structure of as-deposited thin films with various doping concentration.
The lattice constant ‘a’ is obtained from the high intense diffraction peak using, the following
relation for cubic structure.
2
1222 klhda (1)
and hexagonal structure
2
2
2
22
2 3
41
c
l
a
lhkh
dhkl
(2)
where dhklis different between the crystallographic planes and hkl are miller indices. The
calculated d values are use to examine the lattice constant of thin films and these results are
shown in table 2.The full width at half maximum (FWHM) values is to be smaller with
increasing doping concentration. The average crystalline size of as-deposited ZnSe thin films
was estimated using the scherrer equation.
cos
KD (3)
where D is the crystalline size, k is the constant is taken 0.9, λ is the X-ray wavelength, β is full
width at half maximum value of high intense plane in radian and θ is the bragg angle. Some
additional information of the dislocation density, number of crystalline and micro strain these
values are obtained from high intense diffraction peak (101) FWHM of thin film from XRD,
these values are presented in table 2.
Micro strain (ɛ) 4/cos (4)
Number of crystallites (N) aD/15 (5)
Dislocation density (δ) 3/ Dd (6)
International Journal of Pure and Applied Mathematics Special Issue
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where θ is Bragg’s angle and d is thickness of thin film. From literature, micro strain is indirectly
proportional to particle size.
3.31 Morphological and elemental study
Scanning electron microscopy (SEM) is an exceptional technique to examine
microstructure of the thin films. The SEM micrograph and corresponding EDAX spectra of the
ZnSe thin films were deposited with five different Eu concentrations are shown in figure 1a-e,
respectively. The concentrations of Eu solution play on important role on the surface
morphology of as-deposited ZnSe thin film. Fig 4(a) show SEM image of 1% Eu doped ZnSe
thin film, a uniform and well cover to the substrate surface nicely. From the SEM image it is
clearly indicated seen that the film composed of densely packed minute grains. The presented
uniformly with a smooth homogenous background this may be attributed to the amorphous phase
of ZnSe film. The doping concentrations also affect the surface morphology of electrochemically
deposited ZnSe thin film shown in figure 2 (b). The SEM images shows increasing concentration
of Eu solution about 2% in the reaction, the ZnSe film has a smooth surface with increase the
diameter of spherical grains. It is clearly indicated to the nucleation and growth process. When
the Eu solution concentration is 3% the ZnSe thin films exhibit uniform and good coverage of
the spherical grain on the substrate surface shown in figure 2(c). Hence it is clearly indicate that
the good conductivity of the electrolyte when doping concentration increased about 3% in
reaction. Figure 2(d-e) shows the SEM images of the ZnSe thin films were deposited with 4 and
5% of Eu solution. The surface morphology of the ZnSe films visibly changed with the
concentration of Eu. At both concentrations, the film compactness was good, the film surface
was uniformly covered, and the grain size of films was quite well. From the characteristic
spherical shape of grains are disappeared due do the higher concentration of Eu solution. From
this result, clearly indicate that the present of high selenium stoichiometric in the reaction.
The quantitative analysis of electrochemically as-deposited ZnSe:Eu thin films were
studied by using energy dispersive X-ray analysis (EDAX) technique at different concentration
of Eu3+
ion. The elemental analysis was carried out only for the Zn, Se and Eu elements, the
composition of Eu doped ZnSe thin films were shown in table 1. The as-deposited thin films
shows large amount of elemental selenium can be observed in this studied. From the literature
survey ZnSe thin film deposited by electrodeposition method always Se rich composition [22].
3.4 Optical study
Optical absorption spectra was studied in room temperature at the photons of different
wavelength in the range from 300-1100nm. Fig 5 shows the results of the absorption coefficient
(αhν)2 vs photon energy (hν) curves, for ZnSe thin film deposited on ITO glass substrate with
various doing concentration was used. For the as-deposited ZnSe thin films were carried out
from the doping concentration in between 1 and 3%, a sharp absorption coefficient edge was
observed. It is clearly indicated to the hexagonal phase of films. When doping concentration was
International Journal of Pure and Applied Mathematics Special Issue
3803
used 2, 4 and 5% the absorption coefficient edge was not sharp at 3.21, 2.98 and 3.56eV and the
band gap values are increased compeer to the bulk band gap of ZnSe (2.7eV). It is clearly
indicated to the mixture phase of cubic and hexagonal phase was presented.
3.5 Photoluminescence study
Typical room temperature photoluminescence spectrums of as-deposited ZnSe thin films
were shown in fig 6. PL spectra of the films were obtained from the excitation wavelength (λe) of
371nm. PL spectra of ZnSe thin films consists of at least three emission peaks such as 410 nm,
435nm and one weak emission peak centre at 461nm.The high intense emission peak present at
435nm. It was noted that when the small amount of Eu (4%) is used in ZnSe thin film deposition,
the emission show very high intensity is compeer to the other emission peaks. The strong
emission peak 435nm is due to the near band edge emission peak of ZnSe. There is a decrease in
the intensity of emission peaks obtain from the Eu concentration of 1, 2, 3 and 5% use thin film
deposition.
3.6 Raman study
Fig 7. Shows the typical room temperature Raman spectra of as-deposited ZnSe thin
films with Eu3+
ions doped. The broad peak centre at 246 cm-1
due do the longitudinal optical
(LO) phonon in ZnSe. Howere in the value of doping concentration increased from 1-5%. Eu3+
ions LO peak shows small shifting towards higher wavelength side 3cm-1
, which may be due to
the higher electronegative nature of Eu3+
ions compeer to ZnSe [23]. The present measurement
condition laser beam used for the excitation of Raman analysis, the amorphous and crystalline
nature of Se shows the optical phonon peak at 240 cm-1
[24]. The beak broad and sharper with
reduction of FWHM value of ZnSe thin films. It clear to the effect of average strain value
decreased in the thin films show in table 2.
4. Conclusions
ZnSe thin films have been successfully deposited on ITO glass substrate by using
electrochemical deposition technique at aqueous electrolyte solution with different Eu3+
ions. The
effects of doping concentration on structural, morphological and optical properties of as-
deposited ZnSe thin films have been investigated. From the different doping conctration, the
optimal condition for the deposition of high quality ZnSe thin film was obtained from 3% doped
film. The grain size of the thin films have been found to the 31.35 -73.34 nm in size and
spherical shapes of the grain are observed. The XRD analysis conformed that the as-deposited
film exhibited hexagonal (wurtzite) structure and cubic zinc bland structure. Optical band gap
energy (Eg) of ZnSe thin film has blue shifted compared to the bulk band gap of ZnSe. The room
temperature photoluminescence measurement show a strong near band edge emission (NBE) and
also broad weak emission conformed that the spherical shape of ZnSe thin film and presence of
few defect.
International Journal of Pure and Applied Mathematics Special Issue
3804
Acknowledgments
The authors would like to acknowledge the financial support of Science & Engineering
Research Board (SERB), Department of Science and Technology (DST), Fast Track Research
Scheme, India.
Reference
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120-125.
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11. A. P. Samantilleke, M. H. Boyle, J. Young, I.M. DharmadasaGrowth of n-type and p-
type ZnSe thin films using an electrochemical technique for applications in large area
optoelectronic devices, Journal of material science: materials in electronics 1998; 9: 231-
235.
12. Remigiusz Kowalik, Krzysztof Fitzner, Analysis of the mechanism for electrodeposition
of the ZnSe phase on Cu substrate, Journal of electroanalytical chemistry 2009; 633: 78-
84.
13. E.B. Chubenko, A.A. Klyshko, V.A. Petrovich, V.P. Bondarenko, Electrochemical
deposition of zinc selenide and cadmium selenide onto poroussilicon from aqueous acidic
solutions, Thin solid films 2009; 517: 5981-5987.
14. Lingpu Jia, Huanhuan kou, Yiming Jiang, Shengjiao Yu, Jiajia Li, Chunming
WangElectrochemical deposition semiconductor ZnSe on a new substrateCNTs/PVA
and its photoelectrical propertiesElectrochemical Acta 2013; 107: 71.
15. G. Riveros, H. Gomez, R. Henr!ıquez, R. Schrebler, R.E. Marotti, E.A. Dalchiele
Electrodeposition and characterization of ZnSe semiconductor thin films Solar energy
mater solar cells 2011; 70: 255-268.
International Journal of Pure and Applied Mathematics Special Issue
3805
16. Mirtat Bouroushian, Tatjana Kosanovic, Zafiris Loizos Nicholas Spyrellis,
Electrochemical formation of zinc selenide from aqueous solution J. Solid state
electrochem 2002; 6: 272-278.
17. M. Bouroushian, T. Kosanovic, N. Spyrellis, Oriented [1 1 1] ZnSe electrodeposits grown
on polycrystalline CdSe substrates, J. crystal growth 2005; 277:335-344
18. J. mater sci: mater electronic 1998; 9: 231.
19. Shyam Ranjan Kumar, Mohan Nuthalapati and Joydeep Maity,Development of
nanocrystalline ZnSe thin film through electrodeposition from a non-aqueous
solutionScripta materialia 2012; 67: 396-399
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M. Paulraj, K.N. Hui, K.S. Hui Synthesis, structural, optical and Raman studies of pure
and lanthanum doped ZnSe nanoparticles, Material research bulletin 2014; 49: 144-150.
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optical and electrical properties of chemically deposited ZnSe thin films Applied surface
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Figure captions
Figure 1 Cyclic voltammogram of as-deposited ZnSe thin film obtained from an
aqueous electrolytic bath consists of five different concentration of Eu
solution.
Figure 2 Linear voltammograms for as-deposited ZnSe thin films at different
concentration of Eu solution.
Figure 3(a-e) XRD patterns of as-deposited ZnSe thin films prepared using different
concentration of Eu solution at (a) 1% , (b) 2%, (c) 3%, (d) 4% and (e) 5%.
Figure 4(a-e) SEM with EDAX spectra of as-deposited ZnSe thin films prepared using
different concentration of Eu solution at (a) 1% , (b) 2%, (c) 3%, (d) 4%
and (e) 5%.
International Journal of Pure and Applied Mathematics Special Issue
3806
Figure 5 Absorption coefficient vs photon energy spectra of as-deposited ZnSe thin
film with five different of Eu solution.
Figure 6 Photoluminescence spectra of as- deposited ZnSe thin films recorded at room
temperature.
Figure 7 Raman spectra of as-deposited ZnSe thin films prepared with five different
Concentration of Eu solution.
Figure 8 Schottky diode characteristic ofthe semiconducting as-deposited ZnSe thin
films prepared using five different Eu concentration.
Table caption
Table 1 Represent particle size, micro strain and band gap of as-deposited ZnSe thin
films under different preparation conditions.
Table 1 Represent FWHM, d(exp)Å, dislocation density and number of crystallites
per unit area of as-deposited ZnSe thin films from XRD.
International Journal of Pure and Applied Mathematics Special Issue
3807
Figure 1
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
-0.0002
-0.0001
0.0000
0.0001
0.0002
0.0003
0.0004
i[A
/cm
2]
E[V] vs.SCE
1%
2%
3%
4%
5%
International Journal of Pure and Applied Mathematics Special Issue
3808
Figure 2
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
-0.00025
-0.00020
-0.00015
-0.00010
-0.00005
0.00000
0.00005
0.00010
0.00015
0.00020
0.00025
0.00030
0.00035
i[A
/cm
2]
V[E] vs.NEK
%1
%2
%3
%4
%5
International Journal of Pure and Applied Mathematics Special Issue
3809
Figure 3(a-e)
20 30 40 50 60 70
H
2
(a)
(10
1)
(10
3)
(20
2)
HH
(b)
(10
0) (00
2)
(11
1) (1
01
)(2
00
)
(110)
(10
3)
(20
2)
H C H
C
H H H
Inte
ns
ity
(a.u
)
(c)H
(11
0)
(10
3)
(20
2)
H
H
H
(d)
(10
0)
(00
2)
(11
1)
(10
1)
(20
0)
(11
0)
(10
3)
H
HC
H H
(e)(1
00
)(0
02
)
(11
1)
(10
1)
(20
0)
(11
0)
(10
3)
(20
2)
H
C
HH
HC
HC
HHITO
International Journal of Pure and Applied Mathematics Special Issue
3810
Figure 4(a-e)
(a)
(b)
(c)
(d)
(e)
International Journal of Pure and Applied Mathematics Special Issue
3811
Figure 5
2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2
10
20
30
40
50
60
70
80
90
100
h
eV
cm
-1)2
heV
5 %
4 %
3 %
2 %
1 %
International Journal of Pure and Applied Mathematics Special Issue
3812
Figure 6
400 425 450 475
PL
In
ten
sit
y (
a.u
.)
Wavelength (nm)
1%
2%
3%
4%
5%
International Journal of Pure and Applied Mathematics Special Issue
3813
Figure 7
200 300 400 500 600 700
Ra
ma
n I
nte
ns
ity
(a
.u.)
Wavenumber (cm-1)
1%
2%
3%
4%
5%
International Journal of Pure and Applied Mathematics Special Issue
3814
Figure 8
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
-9
-6
-3
0
3
6
9
5 % Eu doped ZnSe
M x
10
-4(e
mu
)
H (T)
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
-6
-4
-2
0
2
4
6
H (T)
M x
10
-4 (
em
u)
2 % Eu doped ZnSe
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
-6
-4
-2
0
2
4
6
3 % Eu doped ZnSe
H (T)
M x
10
-4(e
mu
)
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
-6
-4
-2
0
2
4
6
4 % Eu doped ZnSe
H (T)
M x
10
-4(e
mu
)
International Journal of Pure and Applied Mathematics Special Issue
3815
Table 1
S.No
Bath temperature (°C)
Particle Size (nm)
Strain (10−3
)
Band Gap (eV)
1 50 36.27 2.17 3.31
2 50 42.71 0.78 3.21
3 50 31.35 0.98 3.26
4 50 70.45 0.64 2.98
5 50 73.34 1.04 3.56
Table: 2
Doping
concentration (%)
Bath
temperature
(°C)
FWHM β
(red)
d(exp)
(Å)
Dislocation density
(1014
lines/m2)
Number of
crystallites/unit
area (1022
m−2
)
1 50 0.003960 2.9468 7.60 9.01
2 50 0.003363 2.9468 5.48 3.39
3 50 0.004589 2.9434 0.001 6.64
4 50 0.002028 2.1936 2.02 1.87
5 50 0.001947 2.1949 1.85 7.81
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Issue, PP-401-404, 2017
10. Manavalan, S., Rakesh, N.L., Heat transfer enhancement in shell and tube heat
exchangers using twisted tapes, International Journal of Pure and Applied Mathematics,
V-116, I-17 Special Issue, PP-405-407, 2017
11. Manikandan, J., Hameed Hussain, J., Design on blind shoe using ATMEGA328 arduino,
International Journal of Pure and Applied Mathematics, V-116, I-19 Special Issue, PP-
413-415, 2017
12. Manikandan, J., Hameed Hussain, J., Design and fabrication of vibrating table for
seperating of nuts using different sizes mesh, International Journal of Pure and Applied
Mathematics, V-116, I-19 Special Issue, PP-417-419, 2017
13. Manikandan, J., Hussain, J.H., Design on blind shoe using ATMEGA328 micro
controller, International Journal of Mechanical Engineering and Technology, V-8, I-8,
PP-1575-1579, 2017
14. Manikandan, J., Hussain, J.H., Design and fabrication of blind shoe using ATMEGA328
micro controller and vibration motor, International Journal of Pure and Applied
Mathematics, V-116, I-17 Special Issue, PP-287-289, 2017
15. Manikandan, J., Hussain, J.H., Design and fabrication of blind shoe using ATMEGA328
micro controller and vibration motor, International Journal of Mechanical Engineering
and Technology, V-8, I-8, PP-1588-1593, 2017
International Journal of Pure and Applied Mathematics Special Issue
3817
16. Manikandan, J., Sabarish, R., Waste heat recovery power generation system using
thermoelectric generators, International Journal of Pure and Applied Mathematics, V-
116, I-17 Special Issue, PP-85-88, 2017
17. Meenakshi, D., Udayakumar, R., Protocol with hybridized bluetooth scatternet formation
for wireless network, International Journal of Applied Engineering Research, V-9, I-22,
PP-7299-7307, 2014
18. Meikandaan, T.P., Hemapriya, M., Use of glass FRP sheets as external flexural
reinforcement in RCC Beam, International Journal of Civil Engineering and Technology,
V-8, I-8, PP-1485-1501, 2017
19. Meikandaan, T.P., Hemapriya, M., Use of glass FRP sheets as external flexural
reinforcement in RCC beam, International Journal of Pure and Applied Mathematics, V-
116, I-13 Special Issue, PP-481-485, 2017
20. Meikandaan, T.P., Hemapriya, M., Study on properties of concrete with partial
replacement of cement by rice husk ash, International Journal of Pure and Applied
Mathematics, V-116, I-13 Special Issue, PP-503-507, 2017
21. Meikandaan, T.P., Hemapriya, M., Experimental behaviour of retrofitting of prestressed
concrete beam with FRP laminates, International Journal of Pure and Applied
Mathematics, V-116, I-13 Special Issue, PP-509-513, 2017
22. Meikandaan, T.P., Hemapriya, M., Study of damaged RC beams repaired by bonding of
CFRP laminates, International Journal of Pure and Applied Mathematics, V-116, I-13
Special Issue, PP-495-501, 2017
23. Meikandaan, T.P., Hemapriya, M., Experimental study on strengthening of shear
deficient RC beam with externally bonded GFRP sheets, International Journal of Pure
and Applied Mathematics, V-116, I-13 Special Issue, PP-487-493, 2017
24. Michael, G., Arunachalam, A.R., Srigowthem, S., Ecommerce transaction security
challenges and prevention methods-new approach, International Journal of Pure and
Applied Mathematics, V-116, I-13 Special Issue, PP-285-289, 2017
25. Michael, G., Karthikeyan, R., Studies on malicious software, International Journal of
Pure and Applied Mathematics, V-116, I-8 Special Issue, PP-315-319, 2017
26. Michael, G., Srigowthem, S., Vehicular cloud computing security issues and solutions,
International Journal of Pure and Applied Mathematics, V-116, I-8 Special Issue, PP-17-
21, 2017
27. Micheal, G., Arunachalam, A.R., EAACK: Enhanced adaptive acknowledgment for
MANET, Middle - East Journal of Scientific Research, V-19, I-9, PP-1205-1208, 2014
28. Murugesh, Kaliyamurthie, Thooyamani, K.P., ICI self-cancellation schee for OFDM
systems, Middle - East Journal of Scientific Research, V-18, I-12, PP-1775-1779, 2013
29. Murugesh, Kaliyamurthie, Thooyamani, K.P., Preprocessing and postprocessing decision
tree, Middle - East Journal of Scientific Research, V-13, I-12, PP-1599-1603, 2013
30. Nakkeeran, S., Hussain, J.H., Innovative technique for running a petrol engine with diesel
as a fuel, International Journal of Pure and Applied Mathematics, V-116, I-18 Special
Issue, PP-41-44, 2017
International Journal of Pure and Applied Mathematics Special Issue
3818
31. Nakkeeran, S., Nimal, R.J.G.R., Anticipation possessions for seismic use carbon black on
rubbers, International Journal of Pure and Applied Mathematics, V-116, I-17 Special
Issue, PP-63-67, 2017
32. Nakkeeran, S., Sabarish, R., New method of running a petrol engine with diesel diesel as
fuel, International Journal of Pure and Applied Mathematics, V-116, I-18 Special Issue,
PP-35-38, 2017
33. Nakkeeran, S., Vino, J.A.V., Prevention effects for earthquakes using carbon black on
rubbers, International Journal of Pure and Applied Mathematics, V-116, I-17 Special
Issue, PP-301-305, 2017
34. Nakkeeran, S., Vino, J.A.V., Performance development by using mesh plates in parallel
and counter flows of heat exchangers, International Journal of Pure and Applied
Mathematics, V-116, I-17 Special Issue, PP-291-295, 2017
35. Nalini, C., Arunachalam, A.R., A study on privacy preserving techniques in big data
analytics, International Journal of Pure and Applied Mathematics, V-116, I-10 Special
Issue, PP-281-285, 2017
36. Nalini, C., Ayyappan, G., Academic social network dataset applying various metrics for
measuring author's contribution, International Journal of Pure and Applied Mathematics,
V-116, I-8 Special Issue, PP-341-345, 2017
37. Nalini, C., Brintha Rajakumari, S., Iron toxicity of polluted river water based on data
mining prediction analysis, International Journal of Pure and Applied Mathematics, V-
116, I-8 Special Issue, PP-353-356, 2017
38. Nandhini, P., Arunachalam, A.R., Fault-tolerant quality using distributed cluster based in
mobile ADHOC networks, International Journal of Pure and Applied Mathematics, V-
116, I-8 Special Issue, PP-365-368, 2017
39. Nandhini, P., Arunachalam, A.R., Security for computer organize database assaults from
threats and hackers, International Journal of Pure and Applied Mathematics, V-116, I-8
Special Issue, PP-359-363, 2017
40. Nandhini, P., Arunachalam, A.R., Mobile ADHOC networks: Security and quality of
services, International Journal of Pure and Applied Mathematics, V-116, I-8 Special
Issue, PP-371-374, 2017
41. Naveenchandran, P., Vijayaragavan, S.P., A high performance inverter fed energy
efficient cum compact microcontroller based power conditioned distributed photo voltaic
system, International Journal of Pure and Applied Mathematics, V-116, I-13 Special
Issue, PP-165-169, 2017
42. Naveenchandran, P., Vijayaragavan, S.P., Combination of wind energy-solar energy
power generation, International Journal of Pure and Applied Mathematics, V-116, I-13
Special Issue, PP-117-121, 2017
43. Naveenchandran, P., Vijayaragavan, S.P., A sensor less control of SPM using fuzzy and
ANFIS technique, International Journal of Pure and Applied Mathematics, V-116, I-13
Special Issue, PP-43-50, 2017
44. Nima, R.J.G.R., Hussain, J.H., Design and fabrication of an indexing fixture in a shaper
machine, International Journal of Pure and Applied Mathematics, V-116, I-18 Special
Issue, PP-441-445, 2017
International Journal of Pure and Applied Mathematics Special Issue
3819
45. Nimal, R.J.G.R., Hussain, J.H., Deflection and stress analysis of spur gear tooth using
steel, International Journal of Pure and Applied Mathematics, V-116, I-17 Special Issue,
PP-119-124, 2017
International Journal of Pure and Applied Mathematics Special Issue
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