Post on 10-May-2019
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #1
UnderstandingBrewer ScienceARC® Products
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #2
Overview
• Anti-reflective coating introduction
• Types of anti-reflective coating
• Advantages to anti-reflective coatings
• Advantages to bottom anti-reflective
coatings
• Guide to products and compatabilities
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #3
Anti-Reflective Coating Introduction
• Anti-reflective coatings (ARC® products) can doseveral things
– Absorb light entering the material by light absorbing compounds inmaterial.
– If ARC® products is the correct thickness can cause destructiveinterference of reflected light.
Substrate
ARC
ExposureEnergy
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #4
Types of Anti-reflective Coatings
• Organic– Applied like a photoresist
– Top anti-reflective coating (TARC)
– Applied after the photoresist
– Absorbs light to give little reflection at substrate/resist surface
– Bottom anti-reflective coating (BARC)
– Applied before the photoresist
– Absorbs light and uses destructive interference to give littlereflection at the resist/ARC interface
• Inorganic– Deposited on substrate in special deposition chamber
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #5
Organic and Inorganic ARC
Property Organic ARC Inorganic ARCReflectivity and swing ratioreduction - 1st minimum
++ +++
Reflectivity and swing ratioreduction - 2nd and higher minima
+++ 0
Etch rate 0 or + +++Coating conformity 0 ++Thickness tolerance + 0Plasma damage +++ --Refr. index reproducibility +++ 0Throughput ++ +Cost of Ownership + 0Stack issues +++ -Planarization capability ++ --Rework capability +++ --
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #6
Advantages of Anti-Reflective Coatings
• Eliminates swing effect and standing waves
in photoresist
• Solves topography related lithography
problems
• Provides ultimate critical dimension (CD)
control
• Expands process capability
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #7
Topography Related Lithography Problems
• Light reflecting off underlying substrate reduced or eliminated– Backscattering– Reflective notching– Standing Waves
Exposure Energy Exposure Energy
Standing Wave
Reflective Notching
Resist
ResistARC®
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #8
Reflective Notching
Light Light
Unexposedphotoresist
MetalLine
Reflective Notching
Metalline
Photoresist
CrossSection
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #9
Reflective Notching
0.4µm on 2500Å steps using 1844Å XHRi
Competitor BARC
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #10
Swing Effects
• Dose to clear swing curve defined as the amount of lightrequired to completely expose photoresist
• Swing curves reduced with application of ARC® products.Dose to Clear Swing
Resist Thickn ess (nm)
Dos
e (m
J)
5 0
5 5
6 0
6 5
7 0
7 5
8 0
8 5
9 0
9 5
100
850 900 950 1000 1050
No ARC
XHRi
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #11
ARC® Products Reflectivity Curve
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0
ARC®Thickness
AluminumGaAsPolyTungsten
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #12
Resist Profiles on Topography
0.4µm with 2500Å Steps with 1844Å ARC XHRi
High Area
Transition Flat Area
Low Area
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #13
Advantages of organic ARC® Products
• Can apply with existing photoresist application systems• Do not need expensive deposition chambers• Prevents chemical interaction between photoresist and
substrate– ARC ® products acts as wall to nitrogen poisoning with chemically
amplified photoresists
• Increases CD control– Eliminates reflective notching
– Eliminates standing waves and scattered light
• Extends lithography process window– Increases stepper focus latitude
– Maximizes photoresist exposure latitude
– Increases usage life of stepper.
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #14
Lines With or Without ARC® Products
PEK-103 0.20µm L/S Resist on DUV42
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #15
Guide to BSI ARC® Products
• Exposure wavelength– G-line, I-line, DUV, 193nm
• Planar or conformal ARC® products– Worst case step height
– CD tolerances needed
• Wet or dry processing– Depending on equipment availability, CD and wavelength
– Wet process BARC develops away with resist
– Dry process BARC requires a gas etcher
• Choose BARC based on resist chosen– DUV resists have two chemistries
– ACETAL
– ESCAP/TBOC
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #16
Planar vs Conformal ARC® Products
PLANAR BARC
RESIST RESIST RESIST RESIST
CONFORMAL
BARC
EQUALRESIST
THICKNESS THINRESIST
EQUIVALENTBARC
THICKNESS
SUBSTRATE SUBSTRATE
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #17
Wet or Dry Etch Processing
InorganicDeveloper Insoluble
OrganicDeveloper Insoluble
OrganicDeveloper Soluble
Exposure
Development
Etch
Stripping
SubstrateAnti-reflectiveBottom coat Photoresist
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #18
What is a Bake Window?
Bake Latitude
CD
Bake Temperature
Stable Lines Spaces Clear
MissingPattern
SpaceResidue
Stepper & Resist Resolution Limit
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #19
Wet or Dry Etch Patterning
0.35 µm Dense Lines
177°C Bake 205°C Bake
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #20
BSI ARC® Product Families
• G-line (broadband material)– Wet or dry process
– XLT– XLX
• I-line– Wet or dry process
– WiDE
– Dry process only– XHRi
– XHRiA
• DUV– Dry Process Only– ESCAP/TBOC compatible
– DUV30 (planar)
– DUV42 (conformal)– ACETAL compatible
– DUV32 (planar)– DUV44 (conformal)
Planar ARC® products gives superior photo performanceConformal ARC ® products gives superior etch performance
Various viscosities available in each family
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #21
Etch Capabilities
• Successfully dry etched in various chemistries
–HBr
–O2
–Cl2, HCl
–CF4, C2F2
–N2
–Carrier gases: He, Ar
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #22
DUV42 Etch Performance
After HBr/O2 etch.∆CD = 0.026µm.Selectivity = 0.85
After He/O2 etch.∆CD = 0.024µm.Selectivity = 1.04
After Cl2/O2 etch.∆CD = 0.013µm.Selectivity = 1.48
Brewer Science Effective Date: 04/20302 D oc. Control#: F.6.6.0109.A
General ARC Presentation: Slide #23
Cleaning/Stripping Capability
• ARC® products can be removed by commonphotoresist stripping processes
–Oxidizing plasma or oxidizing solvent stripprocesses
– Ozone Plasma Strip
– O2 Plasma
– Piranha
– RCA Clean