Post on 23-May-2020
Application Note1111 NJG1133MD7
1/19
2.1GHz/800MHz/1.9GHz Bands Application
1-1 Summary
The characterisitics of 2.1GHz/800MHz/1.9GHz bands have evaluated as follows. The evaluation
circuit structure and measured data are reviewed.
1-2-1 Measurement data of assembled evaluation board
DC Characteristics
General conditions : VDD=2.8V, Ta=+25oC
LNA Supply Voltage VDD 2.8 V
Control Voltage 1 (High) VCTL1(H) 1.8 V
Control Voltage 1 (Low) VCTL1(L) 0 V
Control Voltage 2 (High) VCTL2(H) 1.8 V
Control Voltage 2 (Low) VCTL2(L) 0 V
Control Voltage 3 (High) VCTL3(H) 1.8 V
Control Voltage 3 (Low) VCTL3(L) 0 V
LNA Operating Current 1(2.1GHz High Gain Mode)LNA Operating Current 2(800MHz High Gain Mode)LNA Operating Current 3(1.9GHz High Gain Mode)LNA Operating Current 4(Low Gain Mode)
Control Current 1 ICTL1 VCTL1=1.8V 5.0 uA
Control Current 2 ICTL2 VCTL2=1.8V 4.9 uA
Control Current 3 ICTL3 VCTL3=1.8V 5.0 uA
VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
VCTL3=0V
IDD1
IDD2
IDD3
IDD4
Parameter Symbol Condition
VCTL1=0V, VCTL2=0V, VCTL3=1.8V
Units
2.51 mA
Measurement
data
32.2
2.43
mA
mA
uA
2.54
Application Note1111 NJG1133MD7
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1-2-2 Measurement data of assembled evaluation board
RF Characteristics 1 (2.1GHz Band High Gain Mode)
Small Signal Gain 1Exclude Input&Output PCB,
Connector Losses (0.45dB)Gain 1 15.7~16.0 dB
Isolation 1Exclude Input&Output PCB,
Connector Losses (0.45dB)ISO 1 -29.9~-29.3 dB
Noise Figure 1Exclude PCB, Connector
Losses (0.09dB)NF 1 1.29~1.30 dB
Input Power 1dB
Compression 1P-1dB(IN)_1 -9.6~-9.2 dBm
Input 3rd Order
Intercept Point 1
f1=fRF, f2=fRF+100kHz,
Pin=-30dBmIIP3H1_1 -0.3~-0.1 dBm
RF IN VSWR 1 VSWRi_1 1.38~1.63 -
RF OUT VSWR 1 VSWRo_1 1.86~1.92 -
RF Characteristics 2 (2.1GHz Band Low Gain Mode)
Small Signal Gain 2Exclude Input&Output PCB,
Connector Losses (0.45dB)Gain 2 -3.6~-3.5 dB
Isolation 2Exclude Input&Output PCB,
Connector Losses (0.45dB)ISO 2 -3.6~-3.5 dB
Noise Figure 2Exclude PCB, Connector
Losses (0.09dB)NF 2 3.4~4.1 dB
Input Power 1dB
Compression 2P-1dB(IN)_2 +14.0~+14.3 dBm
Input 3rd Order
Intercept Point 2
f1=fRF, f2=fRF+100kHz,
Pin=-16dBmIIP3_2 +10.8~+11.8 dBm
RF IN VSWR 2 VSWRi_2 1.21~1.43 -
RF OUT VSWR 2 VSWRo_2 1.62~1.76 -
UnitsParameter Condition SymbolMeasurement
Data
General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter SymbolCondition
General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz,
UnitsMeasurement
Data
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Application Note1111 NJG1133MD7
3/19
1-2-3 Measurement data of assembled evaluation board
RF Characteristics 3 (800MHz Band High Gain Mode)
Small Signal Gain 3Exclude Input&Output PCB,
Connector Losses (0.22dB)Gain 3 15.9~16.0 dB
Isolation 3Exclude Input&Output PCB,
Connector Losses (0.22dB)ISO 3 -34.7~-34.4 dB
Noise Figure 3Exclude PCB, Connector
Losses (0.06dB)NF 3 1.31~1.44 dB
Input Power 1dB
Compression 3P-1dB(IN)_3 -9.4~-9.3 dBm
Input 3rd Order
Intercept Point 3
f1=fRF, f2=fRF+100kHz,
Pin=-30dBmIIP3H1_3 -2.8~-2.1 dBm
RF IN VSWR 3 VSWRi_3 1.62~1.73 -
RF OUT VSWR 3 VSWRo_3 2.21~2.34 -
RF Characteristics 4 (800MHz Band Low Gain Mode)
Small Signal Gain 4Exclude Input&Output PCB,
Connector Losses (0.22dB)Gain 4 -3.1~-3.0 dB
Isolation 4Exclude Input&Output PCB,
Connector Losses (0.22dB)ISO 4 -3.1~-3.0 dB
Noise Figure 4Exclude PCB, Connector
Losses (0.06dB)NF 4 3.0~3.9 dB
Input Power 1dB
Compression 4P-1dB(IN)_4 +17.1~+17.7 dBm
Input 3rd Order
Intercept Point 4
f1=fRF, f2=fRF+100kHz,
Pin=-20dBmIIP3_4 +13.8~+14.5 dBm
RF IN VSWR 4 VSWRi_4 1.26~1.38 -
RF OUT VSWR 4 VSWRo_4 1.66~1.75 -
UnitsParameter Condition SymbolMeasurement
Data
General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=869~900MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter SymbolCondition
General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=869~900MHz,
UnitsMeasurement
Data
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Application Note1111 NJG1133MD7
4/19
1-2-4 Measurement data of assembled evaluation board
RF Characteristics 5 (1.9GHz Band High Gain Mode)
Small Signal Gain 5Exclude Input&Output PCB,
Connector Losses (0.41dB)Gain 5 15.5~16.0 dB
Isolation 5Exclude Input&Output PCB,
Connector Losses (0.41dB)ISO 5 -26.1~-25.8 dB
Noise Figure 5Exclude PCB, Connector
Losses (0.10dB)NF 5 1.36~1.38 dB
Input Power 1dB
Compression 5P-1dB(IN)_5 -8.6~-8.1 dBm
Input 3rd Order
Intercept Point 5
f1=fRF, f2=fRF+100kHz,
Pin=-30dBmIIP3H1_5 +0.3~+1.0 dBm
RF IN VSWR 5 VSWRi_5 1.85~1.99 -
RF OUT VSWR 5 VSWRo_5 1.63~1.76 -
RF Characteristics 6 (1.9GHz Band Low Gain Mode)
Small Signal Gain 6Exclude Input&Output PCB,
Connector Losses (0.41dB)Gain 6 -4.2~-4.1 dB
Isolation 6Exclude Input&Output PCB,
Connector Losses (0.41dB)ISO 6 -4.2~-4.1 dB
Noise Figure 6Exclude PCB, Connector
Losses (0.10dB)NF 6 3.8~4.7 dB
Input Power 1dB
Compression 6P-1dB(IN)_6 +16.3~+16.8 dBm
Input 3rd Order
Intercept Point 6
f1=fRF, f2=fRF+100kHz,
Pin=-16dBmIIP3_6 +14.1~+14.7 dBm
RF IN VSWR 6 VSWRi_6 1.56~1.61 -
RF OUT VSWR 6 VSWRo_6 2.22~2.26 -
UnitsParameter Condition SymbolMeasurement
Data
General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1930~1990MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter SymbolCondition
General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1930~1990MHz,
UnitsMeasurement
Data
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Application Note1111 NJG1133MD7
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1-3 Pin configuration
1-4 Truth table
VCTL terminal function
VCTL1, VCTL2:Band Select (2.1GHz or 800MHz or 1.9GHz)
VCTL3:RX ATT Select (High Gain mode or Low Gain mode)
13
RFIN2
RFIN1 RFOUT2
GND
VCTL2
VCTL3
VCTL1
Logic Circuit
RFOUT3
RFIN3
RFOUT1
1.9GHz Band
Bias Circuit
Bias Circuit
Bias Circuit
GND
2.1GHz Band
800MHz Band
6
5
7
14
12
13
GND 2 4 1 3
10 8 11 9 GND GND
VCTL1 VCTL2 VCTL3
(Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass
L L L OFF ON OFF ON OFF ONL L H ON OFF OFF OFF OFF OFFH L L OFF ON OFF ON OFF ON
H L H OFF OFF ON OFF OFF OFFL H L OFF ON OFF ON OFF ONL H H OFF OFF OFF OFF ON OFFH H L OFF ON OFF ON OFF ON
H H H OFF OFF OFF OFF ON OFF
Control Voltage State
2.1GHz Band 800MHz Band 1.9GHz Band
Application Note1111 NJG1133MD7
6/19
1-5-1 Typical characteristics (2.1GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
2.1GHz @High Gain
Pout vs. Pin(f=2140MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=-9.3dBm
0
5
10
15
20
-40 -30 -20 -10 0 10
2.1GHz @High Gain
Gain, IDD vs. Pin(f=2140MHz)
0
2
4
6
8
Pin (dBm)
Gain
Gain (dB)
P-1dB(IN)=-9.3dBm
IDD (mA)
IDD
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
2.1GHz @High Gain
Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)
Pin (dBm)
Pout
Pout, IM3 (dBm)
IIP3=-0.1dBm
IM3
12
13
14
15
16
17
18
19
20
2.1 2.12 2.14 2.16 2.18 2.2
2.1GHz @High Gain
OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm)
-2
-1
0
1
2
3
4
5
6
frequency (GHz)
OIP3
OIP3 (dBm)
IIP3IIP3 (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.05 2.1 2.15 2.2 2.25 2.3
2.1GHz @High Gain
NF, Gain vs. frequency(f=2.0~2.3GHz)
4
6
8
10
12
14
16
18
20
Gain (dB)
frequency (GHz)
Gain
NF
NF (dB)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
2.1GHz @High Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
Application Note1111 NJG1133MD7
7/19
1-5-2 Typical characteristics (2.1GHz Band High Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V
Application Note1111 NJG1133MD7
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1-5-3 Typical characteristics (2.1GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
2.1GHz @Low Gain
Pout vs. Pin(f=2140MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=+14.1dBm
-12
-10
-8
-6
-4
-2
0
-40 -30 -20 -10 0 10 20
2.1GHz @Low Gain
Gain, IDD vs. Pin(f=2140MHz)
25
30
35
40
45
50
55
Pin (dBm)
Gain
Gain (dB)
P-1dB(IN)=+14.1dBm
IDD (uA)
IDD
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
2.1GHz @Low Gain
Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)
Pin (dBm)
Pout
Pout, IM3 (dBm)
IIP3=+11.2dBm
IM3
6
7
8
9
10
11
12
13
14
2.1 2.12 2.14 2.16 2.18 2.2
2.1GHz @Low Gain
OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm)
6
7
8
9
10
11
12
13
14
frequency (GHz)
OIP3
OIP3 (dBm)
IIP3
IIP3 (dBm)
0
2
4
6
8
10
12
14
2 2.05 2.1 2.15 2.2 2.25 2.3
2.1GHz @Low Gain
NF, Gain vs. frequency(f=2.0~2.3GHz)
-14
-12
-10
-8
-6
-4
-2
0
Gain (dB)
frequency (GHz)
Gain
NFNF (dB)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
2.1GHz @Low Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
Application Note1111 NJG1133MD7
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1-5-4 Typical characteristics (2.1GHz Band Low Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V
Application Note1111 NJG1133MD7
10/19
1-5-5 Typical characteristics (800MHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
800MHz @High Gain
Pout vs. Pin(f=885MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=-9.3dBm
0
5
10
15
20
-40 -30 -20 -10 0 10
800MHz @High Gain
Gain, IDD vs. Pin(f=885MHz)
0
2
4
6
8
Pin (dBm)
Gain
Gain (dB)
P-1dB(IN)=-9.3dBm
IDD (mA)
IDD
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
800MHz @High Gain
Pout, IM3 vs. Pin(f1=885MHz, f2=f1+100kHz)
Pin (dBm)
Pout
Pout, IM3 (dBm)
IIP3=-2.1dBm
IM3
9
10
11
12
13
14
15
16
17
860 870 880 890 900 910
800MHz @High Gain
OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm)
-4
-3
-2
-1
0
1
2
3
4
frequency (MHz)
OIP3
OIP3 (dBm)
IIP3IIP3 (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
750 800 850 900 950 1000
800MHz @High Gain
NF, Gain vs. frequency(f=750~1000MHz)
4
6
8
10
12
14
16
18
20
Gain (dB)
frequency (MHz)
Gain
NF
NF (dB)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
800MHz @High Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
Application Note1111 NJG1133MD7
11/19
1-5-6 Typical characteristics (800MHz Band High Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
Application Note1111 NJG1133MD7
12/19
1-5-7 Typical characteristics (800MHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
800MHz @Low Gain
Pout vs. Pin(f=885MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=+17.7dBm
-12
-10
-8
-6
-4
-2
0
-40 -30 -20 -10 0 10 20
800MHz @Low Gain
Gain, IDD vs. Pin(f=885MHz)
25
30
35
40
45
50
55
Pin (dBm)
Gain
Gain (dB)
P-1dB(IN)=+17.7dBm
IDD (uA)
IDD
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
800MHz @Low Gain
Pout, IM3 vs. Pin(f1=885MHz, f2=f1+100kHz)
Pin (dBm)
Pout
Pout, IM3 (dBm)
IIP3=+14.5dBm
IM3
9
10
11
12
13
14
15
16
17
860 870 880 890 900 910
800MHz @Low Gain
OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm)
9
10
11
12
13
14
15
16
17
frequency (MHz)
OIP3
OIP3 (dBm) IIP3
IIP3 (dBm)
0
2
4
6
8
10
12
14
750 800 850 900 950 1000
800MHz @Low Gain
NF, Gain vs. frequency(f=750~1000MHz)
-14
-12
-10
-8
-6
-4
-2
0
Gain (dB)
frequency (MHz)
Gain
NF
NF (dB)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
800MHz @Low Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
Application Note1111 NJG1133MD7
13/19
1-5-8 Typical characteristics (800MHz Band Low Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V
Application Note1111 NJG1133MD7
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1-5-9 Typical characteristics (1.9GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
1.9GHz @High Gain
Pout vs. Pin(f=1960MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=-8.4dBm
0
5
10
15
20
-40 -30 -20 -10 0 10
1.9GHz @High Gain
Gain, IDD vs. Pin(f=1960MHz)
0
2
4
6
8
Pin (dBm)
Gain
Gain (dB)
P-1dB(IN)=-8.4dBm
IDD (mA)
IDD
10
11
12
13
14
15
16
17
18
1.90 1.92 1.94 1.96 1.98 2.00
1.9GHz @High Gain
OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm)
-3
-2
-1
0
1
2
3
4
5
frequency (GHz)
OIP3
OIP3 (dBm)
IIP3
IIP3 (dBm)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.80 1.85 1.90 1.95 2.00 2.05 2.10
1.9GHz @High Gain
NF, Gain vs. frequency(f=1.8~2.1GHz)
4
6
8
10
12
14
16
18
20
Gain (dB)
frequency (GHz)
Gain
NF
NF (dB)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
1.9GHz @High Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
1.9GHz @High Gain
Pout, IM3 vs. Pin(f1=1960MHz, f2=f1+100kHz)
Pin (dBm)
Pout
Pout, IM3 (dBm)
IIP3=+0.6dBm
IM3
Application Note1111 NJG1133MD7
15/19
1-5-10 Typical characteristics (1.9GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Application Note1111 NJG1133MD7
16/19
1-5-11 Typical characteristics (1.9GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
1.9GHz @Low Gain
Pout vs. Pin(f=1960MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=+16.6dBm
-25
-20
-15
-10
-5
0
-40 -30 -20 -10 0 10 20
1.9GHz @Low Gain
Gain, IDD vs. Pin(f=1960MHz)
-200
-100
0
100
200
300
Pin (dBm)
Gain
Gain (dB)
P-1dB(IN)=+16.6dBm
IDD (uA)
IDD
8
9
10
11
12
13
14
15
16
1.90 1.92 1.94 1.96 1.98 2.00
1.9GHz @Low Gain
OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-16dBm)
10
11
12
13
14
15
16
17
18
frequency (GHz)
OIP3
OIP3 (dBm) IIP3
IIP3 (dBm)
0
5
10
15
20
0 5 10 15 20
1.9GHz @Low Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
1.9GHz @Low Gain
Pout, IM3 vs. Pin(f1=1960MHz, f2=f1+100kHz)
Pin (dBm)
Pout
Pout, IM3 (dBm)
IIP3=+14.6dBm
IM3
0
2
4
6
8
10
12
14
1.80 1.85 1.90 1.95 2.00 2.05 2.10
1.9GHz @Low Gain
NF, Gain vs. frequency(f=1.8~2.1GHz)
-14
-12
-10
-8
-6
-4
-2
0
Gain (dB)
frequency (GHz)
Gain
NF
NF (dB)
(Exclude PCB, Connector Losses)
Application Note1111 NJG1133MD7
17/19
1-5-12 Typical characteristics (1.9GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Application Note1111 NJG1133MD7
18/19
1-6 Application circuit
Parts ID Comments
L1, L2, L4 ~L9 MURATA (LQP03T Series)
L3 TDK (MLK0603 Series)
C1~C5 MURATA (GRM03 Series)
(Top View)
RF OUT3
(1.9GHz )
RF OUT2
(2.1GHz)
RF OUT1
(800MHz)
VCTL3=0 or 1.8V
(RX ATT)
VCTL2=0 or 1.8V
(Band Sel2)
VCTL1=0 or 1.8V
(Band Sel1)
RF IN3
(1.9GHz)
RF IN2
(2.1GHz )
RF IN1
(800MHz)
13
RFIN2
RFIN1RFOUT2
GND
VCTL2
VCTL3
VCTL1
Logic
Circuit
RFOUT3
RFIN3
RFOUT1
1.9GHz Band
Bias
Circuit
Bias
Circuit
Bias
Circuit
GND
2.1GHz Band
800MHz Band
6
5
7
14
12
13
GND2 41 3
10 811 9GNDGND
L1
12nH
L2
8.2nH
L3
10nH
L4
2.4nH
L5
1.6nH
L6
2.4nH
L7
2.9nH
L8
0.9nH
L9
2.9nH
VDD=2.7V
C1
2.0pF
C2
2.0pF
C3
0.01uF
C5
0.01uF
C4
3.0pF
Parts List
Application Note1111 NJG1133MD7
19/19
1-7 Evaluation board
(Top View)
RF IN2 (2.1GHz)
VDD
VCTL1
RF IN1 (800MHz)
RF OUT1 (800MHz)
RF OUT3 (1.9GHz)
VCTL2
RF IN3 (1.9GHz)
VCTL3
RF OUT2 (2.1GHz)
VDD
L1
L2
L3 L5
L4
L6 L8
L7
L9
C1
C2
C3
C5 C4
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)
PCB SIZE=35.4mm x 17.0mm
CAUTION
In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.