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주관 | 爛랬!總 KSIA 한국반도찌|깐업협회 I쟁51\R 한국반도1111연구쪼합
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- Program at a Glance The 27th Korean Conference on Semiconduct。rs 2020년 2월 12일[수]-14일[금], 강원도 하이원 그랜드호텔덴는 ;
10:30-10:’45
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'Trends and Challenges in Nanoelectranics" 점심 I그댄드뚫 Ill/똥] ‘Short Course I 엽기자께안 채공
Short Course I ' Trends and Challenges in Nanoelectrorncs”
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Thin Film Process Techn이여Y
Compound Semiconductors
Silicon and Grou어V Devices and Integration Technology
Device & Process Modeling, Simulation and Reliabil씨
Display and Ima빙ng Techn이ogies
MEMS & Senscr Systems
Nano-Science & Tectmology
Memory (Design & Process Technology)
Analog Design
RFandWi떼않sDesign
VLSI CAD
System LSI DeSlgn
P Device for Energy (S이ar Cell, Power Devicκ Battery, 하c.)
Q Metrology, Inspection, and Yield Enhancement
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CONTENTS
I. 대회조직 7
상임운영위원회 ............................... .. ..... .. ........................................ ..................................... 7 조직위원회 ............................................... .. .......................................... ... ............................. 7
분과위원회 -------------------------‘--------- ------------------, ••• ,----- ....................... .................................... 8
11. 주요행사일정 13
-2월 12일(수) Short Course .............. ’ ••••••••••• ’ •• ’ ••••••••• ’ •••••••••••••••••••••••••••••••••• ’ ••• ••••••••••••••••••••••••••••••••••• 13
-2월 13일(목) 기조강연 ............ ‘ •••••••••••••••••••• ‘’’’ ••••••••••••••••••••••••••• ‘ ••••• ‘‘ •••••••••••• ’’’ ••••• •• ’ •••••••••••••••••••••••••••• 1 4 만찬 / 시상식 ....................................................................... ’ ••• ’ ’ .’’ ’’ •• ••••••••••••••••••••••••••••••• 1 4 Rump Session .......... ’ •••••• ’ ••••• ’. ‘‘ •• ••• ••••••••••••••••••••••••• ’ ••••••••• ’.’ ’ .... ...... ............................. 15
-2월 14일(금)
폐회식 및 경품추첨식 ..... ’ •••• ’’’’’’ ••••••• ‘ ‘ ••••••• ‘ •••••••••••••• ’ •• ’ ••• ’ ’’’’’.’’’’’ •••• ‘ .‘ •••••••• ‘‘ ....... .. ........... 15
血.강대원상 • 6
w. 전시안내 19
v. 기조강연 29
VI. 구두l포스터 발표 안내 31
- 2월 13일(목)
구두발표 -- ----------- ,--------------------’ ‘”’ -- -- -----------------------------------------, ,,----- ---- --------------------------- 34 포스터발표 -------------------‘------------- -- -- -- ---- -------,--------- ……………………………………… ---------… 61
- 2월 14일(금)
구두발표 ---------------------------------------- --- -- -- --------------- ------------------- ‘ --- ------- ----- ------- --- ---------------- 94 포스터빌표 ············· ··· ··········· ············································································· ··· ········· · 131
W. Author Index
- Author Index (A-Z) ........................................................................... ......................... 16
- Author Index (「-동) -- --- ---- ----- - - - -------
I The:· 27th . Korean :. ConferenCR! ·on .· Semic。nductors I
구투 I ~폼λ터
발표안내
2020년 2월 14일(금)
/π\ 제 27회 The 27th Ko「ean
매P 한국반도체학술대회
• 웹웹 활촬눌r풀iii"빼;~H획
Self-Powered Pressure Sensor with Silk-based Piezoelectric Film for Wearable Electronics
FPl-166 Minhyun 」 ung1’ Kwang-jae Lee2, 」 ae-wook Kang2, and Sanghun Jeon1
1 School of Electrical Engineering, KA/ST, 2 Department of Flexible and Printable Electronics, Jeonbuk
National University
Sensing Characteristics of the MOSFET-type Gas Sensor with Sputtered W03 Sensing Layer
Yujeong 」 eong1, Seongbin Hong1’ Gyuweon 」 ung1, Dongkyu 」 ang1, Wonjun Shin1, 」 inwoo Park1’ FPl-167 Seung-lk Han2, Hyungtak Seo2, and Jong-Ho Lee1
10epartment of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul
National University, 20epartment of Energy Systems Research, Ajou University
Skin Deformation Detection Sensor for the AR Headset Hands-free Interface
FPl-168 」aekwang Cha, Jinhyuk Kim, and Shiho Kim
School of Integrated Technol。gy, and Yonsei Institute of Convergence Techn。logy, Yonsei University
The Construct of RF Dielectrophoretic System for Observing Cellular Behavior above a Few
Hundreds MHz FPl-169
Sang Hyun Lee, Kang In Yeo, Seungyeop Choi, and Sang Woo Lee
Department 。fBiomedical Engineering, y。nsei University
Time-of-flight Sensor 시A템 구축 및 성능 평가
FPl-170 Eunsung Park1'2, Woo-young Choi1’ and Myung-jae Lee2
10epartment of Electrical and Electronic Engineering, Yonsei University, 2Post-silicon Semiconductor
Institute, KIST
Waveguide Piezoelectric Micromachined Ultrasonic Transducers (PMUTs) Using Single-crystalline
PMN-PZT Thin Film for Ultrasonic Fingerprint/vein Co-recognition
FPl-171 」 in Soo Park1'2, s。。 Young Jung3키 Seung-hyub Baek3, and Byung Chui Lee1
1Center for BioMicrosystems, KIS℃ 2 Department of Electrical Engineering, Korea University, 3Center
for Electronic Materials, KIST, 4Department of Material Science and Engineering, Seoul National
University
Wireless, Skin-mountable Wearable EMG Sensor for Human-Machine Interface
FPl-172 Sunggu Kang, Minsu Song, and 」 eonghyun Kim
Department of Electr。nic c。nvergence Engineering, Kwangw。。n University
고에너지 이온주입을 이용한 351.1m 단위 픽셀 크기를 갖는 실리콘 광증배 (Si PM)소자
FPl-173 원종일1, 박건식1, 조두형l’ 고상춘1, 이성현1, 최병건2, 박성모2, 박경흔F
1ETRI 반도체융합부품연구실, 2ETRI 초경량지능형반도체연구실
금속 나노파티클이 기능화된 닙랜치 형태 나노와이어의 가스센싱 특성 향상
Hyoun w。。 Kim1·2, Myung Sik Choi1, Jae Hoon Bang1’ Seungmin Han1, Ha Young Lee1, and
FPl-174 Han Gil Na1
1Division of Materials Science and Engineering, Hanyang University, 2The Research Institute of Industrial Science, Hanyang University
150
0
200
400
600
800
1000
1200
1400
1600
5x5 10x10 15x15 20x20
Maxim
um distance(m
m)
Target size (cm)
Short mode
4x4 16x16
Target
Time-of-Flight Sensor 시스템 구축 및 성능 평가Eun-sung Park*, Woo-Young Choi and Myung-Jae Lee
Advanced Semiconductor Devices and Systems(ADS) Lab, KIST, Korea
Email: es.park@kist.re.kr*, mj.lee@kist.re.kr
Time-of-Flight sensor
VL53L1X
Result
Conclusion
400cm
27°
ToF sensor from STMicroelectronics
- Size : 4.9 x 2.5 x 1.5 mm- Emitter : 940 nm invisible
laser- SPAD receiving
array(16x16) with integrated lens
‐ Programmable with Nucleo evaluation board
Source
Detector
Time
Flight time
Source
Detector
Object
Speed of light ′c 3 10 𝑚/𝑠Time of flight (ToF) = 20ns (20 10 𝑠)
Distance 𝐷 𝑐 3 𝑚
We can get distancefrom object to receiver
From a pulse of light reflected by an object
SPAD Overview Single-Photon Avalanche Diode
SPAD structure
GND
𝑉 𝑉
𝑉 𝑉
𝑅
Photon
Very high gain of Geiger-mode operation allows for
Single Photon Detection
Digital nature of SPAD output allows for
Time-of-Arrival Detection&
Photon Counting
Guardring
𝑃Electrode
𝐼
𝑉
𝑉
𝐺𝑎𝑖𝑛
𝑉
1
Avalanche
Conventional
Geiger mode Depletion Region
Photodiode
Depletion RegionSPAD𝐼- 𝑉/ 𝐺𝑎𝑖𝑛
Characteristic
0
200
400
600
800
1000
1200
1400
1600
MEA
SURED
DISTA
NCE(MM)
ACTUAL DIATANCE(MM)
Short mode
Ambient Dark Actual D
0
500
1000
1500
2000
2500
3000
3500
4000
100
300
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
3700
MEA
SURED
DISTA
NCE(MM)
ACTUAL DISTANCE
Long mode
Ambient Dark Actual D
0
100
200
300
400
500
600
700
60 100 140 180 220 260 300 340 380 420 460 500 540 580 620 660
MEA
SURED
DISTA
NCE(MM)
ACTUAL DISTANCE(MM)
Short mode
10% 20% 30% 40% 50% 60%
0
100
200
300
400
500
600
700
800
70
100
130
160
190
220
250
280
310
340
370
400
430
460
490
520
550
580
610
640
670
700
730
MEA
SURED
DISTA
NCE(MM)
ACTUAL DISTANCE(MM)
Long mode
10% 20% 30% 40% 50% 60%
0
200
400
600
800
1000
1200
1400
1600
5x5 10x10 15x15 20x20
Max distance(m
m)
Target size(cm)
SHORT MODE
Ambient Dark Actual D
0
500
1000
1500
2000
2500
3000
3500
4000
10x10 20x20 30x30 40x40 50x50 60x60 70x70
DISTA
NCEMEA
SUREM
ENT(M
M)
TARGET SIZE(CM)
LONG MODE
Ambient Dark Actual D
0
500
1000
1500
2000
2500
3000
3500
4000
10x10 20x20 30x30 40x40 50x50 60x60 70x70
Maxim
um distance(m
m)
Target size (cm)
Long mode
4x4 16x16
‐ Distance ranging up to 400 cm‐ Typical full field of view(FoV) : 27°
(When using 16x16 SPAD array)‐ 3 type distance measurement mode
(short, medium long mode)‐ Programmable Region of Interest (ROI) size
on the receiving array, 𝑉
Quench
Off
𝑉
Time ns
Avalanche
Recharge
𝑉
𝐼
𝑉
SPADOn
𝑉 𝐸𝑋𝑉
Distance Mode
Max.Distance(cm)
Short 136
Medium 290
Long 360
(1) Distance measurement
(2) Reflective dependence
(3) Size of target
(4) Programmable RoI
hv
hv
VL53L1X FoV
Target
ND filters
VL53L1X
VL53L1X
In order to test the reliability of the VL53L1X sensor, the distance was measured in short mode and long mode. The condition of ambient light is same as data sheet noted.
(Dark : 0 lux, Ambient light : 400 lux)
Distance measurement was performed to get the data of how far does Vl53L1x can detect if target is smaller that FoV.
In order to test the reflective dependence of VL53L1X, the target has changed to Neutral density filter and distance is measured until 660~730cm that FoV can cover.
RoI was changed to see the change of the maximum measurable distance. RoI is programmable from 4x4 to 16x16.
(1) Distance measurement
(2) Reflective something
(3) Size of target
(4) Programmable RoI
- Accurate no matter what condition (dark/light) it's in: max error < 20mm (same as data sheet)
-> Reliable in indoor/outdoor applications
- Negligible reflectivity dependence on accuracy-> Reliable various-object measurement thanks to SPAD-based ToF technology
- VL53L1X cannot measure an object if its size smaller than FoV, although it's pretty close!-> Limited applications! Need to be solved!!
- VL53L1X-based system can be optimized for each application.- Smaller RoI results in shorter distance & worse accuracy
Test condition
Target size Cover the FoVRoI 16x16
FoV
Target
FoV
Test condition
Target size Smaller than FoV
RoI 16x16
Target
Test condition
Target type
ND filter (5x5 cm)
RoI 16x16
Test condition
Target size Smaller than FoV
RoI 4x4 / 16x16
VL53L1X
Actual D Actual D